电站锅炉中粉煤灰与SiC耐火材料结渣性研究

本文主要研究含Cr2O3的硅酸锆结合SiC耐火材料的抗粉煤灰侵蚀规律,将两种不同的粉煤灰平铺在SiC耐火材料上,作用温度为1250～1450 ℃,保温时间为40小时,然后用视频光学显微镜和XRD衍射图谱来确定其显微结构和物相组成,初步实验结果表明SiC质耐火材料具有较好的抗煤灰侵蚀性能.     

MgO和Si上NbN超薄薄膜的生长研究

我们在单晶MgO(100)、Si(100)和SiOx/Si基片上成功生长了纳米厚度的超薄NbN薄膜,利用现代分析手段:X射线衍射(XRD)、透射电子显微镜(TEM)、原子力显微镜(AFM)等技术分析研究了所制备的超薄NbN薄膜的微观结构、厚度、表面界面情况等物理特性。研究表明,在MgO(100)基片上获得了外延生长的单晶NbN超薄薄膜,在Si(100)和SiOx/Si基片上获得的是多晶NbN超薄薄膜。厚度均约6nm左右。这些超薄薄膜的超导转变温度分别为:MgO上薄膜是14.46K,Si和SiOx上薄膜分别是8.74K和9.01K.     

High-Power Diode-End-Pumped Slab Composite Tm:YLF Compact Laser

We design a continuous-wave Tm:YLF laser with a composite slab crystal end-pumped by two fiber-coupled laser diodes at room temperature. We achieve a maximum continuous wave output power of 105 W for the bonded slab Tm:YLF laser; the corresponding slope efficiency is 47.7% and the optical-to-optical conversion efficiency is 42.0% with respect to the incident pump power. The laser operated at 1,907.5 nm with a beam quality factor of M² ～3.2 at the highest output power.     

Atom probe tomography analysis of radiation-induced solute clustering in austenite stainless steels

Various types of defects are produced by the irradiation of energetic particles onto a structural material. The large number of mobile vacancies and self-interstitial atoms during irradiation induce defect fluxes and the diffusion of solute atoms in the matrix. The preferential interaction between the solute atoms and radiation-induced defects leads to the enrichment/depletion or clustering of the solutes at defect sinks. In the current work, atom probe tomography (APT) was used for the analysis of radiation-induced solute clustering in ion-irradiated austenite stainless steel 316. Quantitative analysis of the localised clustering of chemical elements was implemented and a parameter selection procedure was proposed. The number density and size distribution of Si clusters in APT specimens irradiated at various temperatures were examined. At high temperature, the number density of the clusters decreased and their size increased. The localized Si atoms in variously shaped defects were clearly identified. The APT method was demonstrated to be suitable for identifying defect structures and for the quantitative analysis of clustering in irradiated specimens.     

Theoretical models for the extracavity Raman laser with crystalline Raman medium

The rate equation model of an extracavity Raman laser is deduced for the first time to the best knowledge of the authors. The normalized radiation transfer equations of the extracavity Raman laser are given. The normalized radiation transfer equations and rate equations were solved numerically to find the optimum reflectivity of the output coupler to realize the maximum conversion efficiency at the first Stokes for both the single and double-pass pumping configurations. Also, the pulse duration of the first Stokes was investigated numerically. The rate equations are verified to be a good approximation to the radiation transfer equations for the regime of low Raman gain and long pump pulse duration. Furthermore, it is found that the optimum reflectivity of the first Stokes and the second Stokes threshold are influenced significantly by the minor feedback of the resonator mirror at the second Stokes. PACS 42.55 42.55.Ye; 42.65 42.65.Dr; 02.60 02.60.Lj; 63.20 63.20.-e     

Quantitative determination of material viscoelasticity using a piezoelectric cantilever bimorph beam

The objective of this paper is to formulate the governing equation of a cantilever bimorph beam associated with a tip mass in contact with a viscoelastic material, which is modeled by a stiffness and a damper in parallel. From the eigenvalue problem, we can obtain the resonant frequencies as functions of the tip mass and material stiffness. The relation between the spectrum and material damping is established by the half-power bandwidth. It is found that the resonant frequencies increase as the material stiffness increases or the tip mass decreases, and the spectrum decreases by increasing the damping. From the analytic results, a cantilever could provide a technique to assess material viscoelasticity by simple measurements of the resonant frequency and the spectrum. Since the cantilever's behavior scales with its geometry, the device can be designed specifically for mechanical measurement of a microscopic system such as living cells and biomaterials.     

微液滴动力学特性的耗散粒子动力学模拟

对传统的耗散粒子动力学方法进行了改进.改进的耗散粒子动力学方法采用了包含远程吸引力和近距排斥力的保守力势函数,从而使得用耗散粒子动力学方法模拟多相流动成为可能.应用改进的耗散粒子动力学方法,对微尺度下液滴的形成及液滴在微重力下的大幅度振荡变形进行了数值模拟.计算结果表明,改进的耗散粒子动力学(DPD)方法能够有效地描述微尺度下液滴的动力学特性,对研究复杂流体多相流动有着重要的意义. 关键词： 多相流 微液滴 耗散粒子动力学(DPD)方法 保守力势函数     

Applications of the finite difference mode solution method to photonic crystal structures

The finite difference waveguide mode solution method, which has been popularly employed in the study of waveguide modes on various optical and dielectric waveguides, is utilized to calculate the modal characteristics of photonic crystal fibers (PCFs) and planar photonic crystal waveguides and the band diagrams of two-dimensional photonic crystals. Vector guided modes on both PCFs based on the total internal reflection guiding mechanism ('holey fibers') and those resulting from photonic band gap effect are accurately computed, with their effective indexes and field distributions compared with other methods. Calculated dispersion of a single-core holey fiber and coupled-power behavior of a two-core holey fiber are found to agree with measured results. For applications to band diagram calculation and planar photonic crystal waveguide analysis, the finite difference scheme is modified simply by imposing suitable periodic boundary condition. Numerical results for air-column crystals and dielectric-rod crystals are both found to agree well with calculations using other methods.     

Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1 − xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of Cd_xZn_{1 − x}Se/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced.     

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

Al₂O₃ incorporated HfO₂ films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al₂O₃ incorporation. The incorporation of Al₂O₃ into the HfO₂ film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO₂ film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO₂ film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al₂O₃ on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO₂ contributed to Hf silicide formation on the film surface.