Bending Loss Calculation of a Dielectric-Loaded Surface Plasmon Polariton Waveguide Structure

Based on full 3D finite element method simulations, the transmission of a dielectric-loaded surface plasmon polariton waveguide （DLSPPW） based 1/4 circle is calculated for a 90° bend model and a 270° bend model, respectively. It is found that the 270° bend model gives almost pure bending loss while the 90° bend model contains additional coupling loss. The models are applied to deduce the loss and unloaded quality factor of DLSPPW based waveguide ring resonators （WRRs） and the results of the 270° bend model agree well with direct simulating results of the WRRs. Thus the 270° bend model gives a fast and simple way to calculate bending loss and it is helpful for WRR design because no wavelength scan is needed.     

有界对称区域上Dirichlet空间中的紧Toeplitz算子

介绍了有界对称区域Ω上Dirichlet空间中的Toeplitz算子的紧性:如果S是有限个Toeplitz算子乘积的有限和,S是紧算子当且仅当S的Berezin变换S(z)趋于0.     

基于液晶纯相位光调制器的4f系统去噪方法

分析了4f系统的噪声来源,提出使用液晶空间光调制器实时去除系统噪声.通过使用Zemike多项式拟合透镜等光学器件引入的像差,根据液晶纯相位光调制器利用位相共轭波进行静态波面校正的工作原理,提出了一种新的相位校正算法,模拟仿真美国BNS公司反射式256×256纯相位液晶空间光调制器,通过重构并逼近畸变波面,产生相位共轭波...     

二维相位计算单元的全光实现

相位的计算在二维傅里叶变换等光学计算中有着很重要的作用,在G-S算法等相位恢复算法中更是有着较多的应用.提出了一种全新的相位叠加方案,除了器件本身的光电转换特性外,不需要外加非光学的辅助单元,用全光的方式实现了相位的线性叠加.通过对该计算单元原理和基本构架进行理论分析和计算机仿真,证明了方案的可行性.设计的计算单元既可...     

Morphological and structural damage investigation of nanostructured molybdenum fuzzy surface after pulsed plasma bombardment

Steady high-flux helium (He) plasma with energy ranging from 50 eV to 90 eV is used to fabricate a fiber-form nanostructure called fuzz on a polycrystalline molybdenum (Mo) surface. Enhanced hydrogen (H) pulsed plasma in a wide power density range of 12 MW/m²-35 MW/m² is subsequently used to bombard the fuzzy Mo, thereby simulating the damage of edge localized mode (ELM) to fuzz. The comparisons of surface morphologies, crystalline structures, and optical reflectivity between the original Mo and the Mo treated with various He⁺ energy and transient power densities are performed. With the increase of He ion energy, the Mo nano-fuzz evolved density is enlarged due to the decrease of filament diameter and optical reflectivity. The fuzz-enhanced He release should be the consequence of crystalline growth and the lattice shrinkage inside the Mo-irradiated layers (~200 nm). The fuzz induced by lower energy experiences more severe melting damage and dust release under the condition of the identical transient H plasma-bombardment. The H and He are less likely to be trapped due to aggravated melting evidenced by the enhanced crystalline size and distinct lattice shrinkage. As the transient power density rises, the thermal effect is enhanced, thereby causing the fuzz melting loss to aggravate and finally to completely disappear when the power density exceeds 21 MW/m². Irreversible grain expansion results in huge tensile stress, leading to the observable brittle cracking. The effects of transient thermal load and He ion energy play a crucial role in etching Mo fuzz during ELM transient events.     

适应复杂外形的三维粘性混合网格生成算法

提出一类适应复杂外形的粘性混合网格生成算法。表面网格由前沿推进三角形曲面网格程序获得,边界层布置各向异性的三棱柱体网格,远物面区域采用Delaunay方法生成四面体网格。针对模型的复杂几何特征,综合采用了各种网格处理技术,以保证边界层网格的质量,并避免算法失效问题。网格实例及计算结果表明了本文算法的实用性及和效性。     

Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.     

Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor(Fin FET)technology. However, the studies of charge sharing induced single-event transient(SET) pulse quenching with bulk Fin FET are reported seldomly. Using three-dimensional technology computer aided design(3DTCAD) mixed-mode simulations,the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk Fin FET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing(RBB), the circuit with forward body-biasing(FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least.This can provide guidance for radiation-hardened bulk Fin FET technology especially in low power and high performance applications.     

一类多线程并行四面体网格优化算法

提出了一类多线程并行、组合了光滑化与局部重连操作的四面体网格优化算法。采用传统的基于拓扑的数据分解策略实现了并行光滑化算法,利用图染色算法将待光滑化的点分解成多个独立点集。同时提出将一类基于几何的数据分解策略应用于局部重连操作的并行化,在每个局部重连操作涉及的几何区域中定义一个特征点,然后沿希尔伯特(Hilbert)曲线对特征点进行排序,曲线的均匀分解对应局部重连操作在各线程的分配。这一分配策略的优点是使并行执行局部重连操作时重连区域相互干涉的情形极少出现。因此,当干涉情形出现时,可选择放弃产生干涉的操作,并行优化效率和效果并无明显的负面影响。最后,数值实验验证了本文算法的效率和有效性。     

Zr的添加对稀燃天然气汽车尾气净化催化剂Pd-Pt/Al2O3性能的影响

Pd-Pt双金属基甲烷氧化催化剂的催化活性、抗水热老化性和耐硫性在一个通有模拟稀燃天然气汽车尾气成分的固定床反应器中进行检测.研究发现Zr掺杂的Pd-Pt/Al₂O₃ (Pd-Pt/Zr_xAl_(1-x)O_(3+x)/2)提高了催化的催化活性、抗水热老化性和耐硫性.以共沉淀法制备Zr : Al的摩尔比分别为0 : 1、0.25 : 0.75、0.5 : 0.5、0.75 :0.25和1 : 0的材料为载体材料.双金属催化剂的活性组分分别为1.5% (w,质量分数)的Pd和0.3% (w)的Pt,活性组分Pd、Pt通过共浸渍的方法浸渍到以上载体材料上制备得到一系列整体式催化剂.分别采用低温N₂吸脱附、X射线衍射(XRD)、H₂程序升温还原(H₂-TPR)、O₂程序升温氧化(O₂-TPD)及X射线光电子能谱对制备的催化剂进行表征.结果显示Zr的加入使催化剂的载体材料结晶度提高,活性组分的分散度也得到了相应的提高.同时二价Pd物种与周围电子密度分别增加.相比于Pd-Pt/Al₂O₃和Pd-Pt/ZrO₂催化剂,在不同条件预处理后, Zr的添加对催化剂的性能有明显的提高,其中催化剂Pd-Pt/Zr_0.5Al_0.5O_1.75展现了最好的催化活性、抗水热老化性以及耐硫性.