排序方式: 共有64条查询结果,搜索用时 15 毫秒
21.
22.
运用二分性及压缩映射原理,研究一类时滞三阶微分方程概周期解的存在性,得到此类微分方程的概周期解存在的充分性定理. 相似文献
23.
强激光场中模型氢原子和真实氢原子产生高次谐波的比较 总被引:1,自引:1,他引:0
通过数值求解原子在强激光场中的含时薛定谔方程,研究了有库仑奇点和无库仑奇点的一维模型氢原子和三维真实氢原子产生高次谐波的特性.结果表明,有库仑奇点和无库仑奇点的一维模型氢原子和三维真实氢原子产生高次谐波的截止位置相同,但是高次谐波强度变化特征明显不同,进一步的研究表明,无库仑奇点的模型氢原子产生的高次谐波谱相对变化趋势与三维真实氢原子的高次谐波谱变化趋势是完全一致的. 相似文献
24.
25.
26.
A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology 下载免费PDF全文
A uniform doping ultra-thin silicon-on-insulator(SOI) lateral-double-diffused metal-oxide-semiconductor(LDMOS)with low specific on-resistance(R_on,sp) and high breakdown voltage(BV) is proposed and its mechanism is investigated.The proposed LDMOS features an accumulation-mode extended gate(AG) and back-side etching(BE). The extended gate consists of a P– region and two diodes in series. In the on-state with VGD 0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The R_on,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the R_on,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping(VLD) and the "hot-spot" caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the R_on,sp by 70.2% and increases the BV from 776 V to 818 V. 相似文献
27.
用近红外光拓扑图技术短期预测脑梗塞 总被引:3,自引:0,他引:3
本研究用近红外光大脑拓扑图技术(near-infrared cerebral topography, NIRS topography),对大鼠大脑中动脉线栓梗塞模型的皮层缺血部位进行定位成象.我们利用氧合血红蛋白和去氧血红蛋白对近红外光的吸收峰值波长分别为850nm和760nm的原理,制作了NIRS拓扑仪.分别用NIRS拓扑仪、磁共振成象和解剖样本染色对10只SD雄性大鼠大脑皮层缺血部位进行成象.结果表明,NIRS拓扑图所显示的皮层缺血面积与磁共振图象及解剖样本所显示的皮层缺血面积的相关系数分别为0.82(p<0.05)和0.89(p<0.01). 相似文献
28.
29.
利用单电子近似下锂原子精确的模型势,通过数值求解三维含时薛定谔方程的方法,研究了锂原子在激光场中发射低阶谐波的性质,研究结果表明,对于锂原子电离阈值以下的低阶谐波,除了通常的奇次谐波外,还有侧峰结构出现,运用同步压缩变换技术(SST)分析这些低阶谐波的辐射特性,我们发现这些侧峰是由原子在激光场中的缀饰态之间的跃迁和无场下激发态到基态的跃迁组成的,如果当激光脉冲结束后,仍有发射的侧峰,其位置与主峰之间的能量差可以用来估算原子激发态在激光场中的最大Stark移动. 相似文献
30.