A novel LDMOS with a junction field plate and a partial N-buried layer

A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (R_on.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in R_on.sp by 45.7% simultaneously.     

利用两色组合激光场驱动氦原子产生单个阿秒脉冲

对由波长为1600 nm和800 nm两色激光形成组合场驱动氦原子产生的高次谐波进行了研究,通过改变组合场中主要发射高次谐波期间电场的上升沿和下降沿随时间不同的变化率,使电子长路经和短路径发射谐波的特性发生变化,将由此产生的高次谐波进行叠加时可以得到更短的阿秒脉冲,再调节两束激光场的延迟时间,能够有效地实现抑制电子短路径的贡献,从而得到脉宽为33.7 as的单个阿秒脉冲.     

微波消解-氢化物发生-原子荧光法测定海蜇中的痕量砷和硒

建立了氢化物发生-原子荧光光谱法(HG-AFS)测定新鲜和腌制海蜇中痕量砷、硒的分析方法。采用冷冻干燥和微波消解相结合的方法处理样品,设定了最佳的样品处理条件和仪器测定条件,解决了消解液中过剩酸对测定的干扰问题,并对共存元素干扰情况进行了研究。利用加标回收试验,对分析方法进行了验证。实验结果表明,该方法具有简便、快速、灵敏、准确等特点,适合于含水量较高的生物样品的测定。     

一种铜催化合成异吲哚啉-1-酮的方法

本文设计了一种以邻苯甲腈和苯乙炔为原料,在铜催化剂的作用下环化生成异吲哚啉-1-酮的反应方法.以邻溴苯腈和苯乙炔作为反应模板,对溶剂、碱添加剂、催化剂、反应时间和温度做了探索,确定最佳反应条件为:碘化亚铜(0.02 mmol),去氧水(0.6 mmol),叔丁醇钾(0.3 mmol),1,4-二氧六环(0.2 mol·L^-1),100℃反应6 h.在最优反应条件下,对不同的反应底物进行了一系列的研究,底物适用性良好.     

随机湍流工况低雷诺数风力机翼型优化研究

为改善小型风力机随机湍流工况适应性,以NACA0012翼型为研究对象,采用非嵌入式概率配置点法,获得随机湍流工况下小型风力机叶片翼型运行攻角分布规律;在气动优化中耦合层流分离预测,基于Transition SST模型、拉丁超立方试验设计、Kriging模型和带精英策略非支配排序遗传算法NSGA-II进行高湍流低雷诺数风力机翼型气动优化。结果表明,优化翼型叶片平均风能捕获效率分别提高3.01%和4.76%,标准差分别降低4.76%和14.93%,优化翼型湍流适应性增强。该方法将翼型设计与湍流风况相匹配,为湍流工况低雷诺数翼型及小型风力机设计提供参考。     

(La1-xSmx)0.185Sr0.15CuO4的输运性质的研究

通过对系列（La1-xSmx)0.185Sr0.15CuO4（x=0,0.05,0.10,0.15)的多晶样品在4.2K-300K的电阻率和液氮温区内的热电势的测量,发现（La1-xSmx)0.185Sr0.15CuO4的电阻率在高温区呈现出线性关系,其斜率也随着x的增大而增大,在x=0.10时达到最大,而在Tc到100K的温区,随着Sm含量的增加,则呈现出由金属行为到类半导体行为的转变,同时超导温度Tc也随着降低,液氮温区内的温差热电势反映了随着Sm含量的增加,体系的载流子浓度也随之降低。     

新型超导体MgB2的热电势和电阻率研究

测量了MgB₂的热电势和电阻率与温度的依赖关系.在100K—300K区间,热电势呈近似线性温度依赖关系,其斜率为正,表明载流子为空穴型且与能带贡献的图像相一致.与此对应,在此温区电阻率呈T²依赖关系.在100K以下,热电势和电阻率各自转变了其高温区的温度依赖关系.热电势在超导转变温度T_c(零电阻366K)到100K间有一宽峰,具有声子曳引峰的特征,表明电子-声子相互作用很强.估算了一些重要的参数,如带米能E_F、能带宽度 关键词： 新型超导体 热电势 电阻率     

A low specific on-resistance SOI LDMOS with a novel junction field plate

A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a metal field plate. The unique structure not only yields charge compensation between the JFP and the drift region, but also modulates the surface electric field. In addition, a trench gate extends to the buffed oxide layer （BOX） and thus widens the vertical conduction area. As a result, the breakdown voltage （BV） is improved and the specific on-resistance （Ron,sp） is decreased significantly. It is demonstrated that the BV of 306 V and the Ron,sp of 7.43 mΩ.cm2 are obtained for the JFP LDMOS. Compared with those of the conventional LDMOS with the same dimensional parameters, the BV is improved by 34.8%, and the Ron,sp is decreased by 56.6% simultaneously. The proposed JFP LDMOS exhibits significant superiority in terms of the trade-off between BV and Ron,sp. The novel JFP technique offers an alternative technique to achieve high blocking voltage and large current capacity for power devices.     

电子型超导体Sm2-xCexCuO4(0.00≤x≤0.21)的异常热电势与电阻率

测量了Sm2-xCexCuO4(0.00≤x≤0.21)多晶样品的热电势S和电阻率ρ的温度依赖关系.在缘绝体-金属转变边界处,观测到热电势从绝缘体区明显的弱温度依赖关系到金属区线性温度依赖关系的转变.当Ce的含量由0.09增加到0.21时,高温下S的斜率发生由负到正的转变,这是能带的填充能级发生改变时电子型和空穴型载流子的贡献发生竞争的表现,由电子型向空穴型的过渡发生在x＝0.17处.S和ρ在200K以下的斜率变化是载流子局域化造成的.x＝0.06-0.21的样品在50K处观察到一个正的曳引峰.室温下的热电势S300K和S0(高温区热电势线性外推到0K的值)与Ce含量在绝缘体、欠掺杂和过掺杂区域有不同的依赖关系.过掺杂区域很小的S300K和S0意味着一个宽带的费米液体的贡献,同时ρ满足T2关系,二者相一致.     

类氢He+、Li2+离子的电子碰撞强度的R矩阵计算

利用R矩阵方法计算了电子与He+离子碰撞的1s-2s和1s-2p跃迁的碰撞强度,结果表明包括10个靶态的计算可以得到精确的类氢离子的n=1→n=2各能级跃迁的碰撞强度,并首次利用R矩阵方法计算了电子与Li2+离子碰撞的1s-2s和1s-2p跃迁的碰撞强度.