静止轨道星载差分吸收光谱仪CCD成像系统设计

静止轨道卫星差分吸收光谱仪采用摆扫成像方式对大气进行探测,针对其工作时CCD成像系统信噪比大于1 000、高速探测模式下探测周期小于10min、高分辨率模式下探测周期小于1h的要求,进行CCD成像系统设计.选取CCD47-20作为探测器,设计成像电路实现光谱图像信号的采集和上传.分析了帧叠加和像元合并对时间、空间分辨率的影响.结合帧转移CCD的特点设计了每个位置最后一帧读出时摆镜转动的成像方式,并合理设置了帧叠加数和像元合并数,达到优化成像周期的目的.1s曝光时间条件下,该CCD成像系统的高速、高分辨率模式探测周期分别为515s和3 315s,图像信噪比均大于1 000,污染物观测实验中未出现失帧或重复的现象.该CCD成像系统方案满足静止轨道星载差分吸收光谱仪的探测需求,为静止轨道环境监测仪器设计提供参考.     

一种新的岩石非线性黏弹塑性蠕变模型研究

为了克服传统元件组合模型不能描述岩石蠕变过程中非线性特征的缺陷，首先根据加速蠕变阶段的应变和应变率随蠕变时间急剧增大的特点，建立黏塑性应变与蠕变时间的指数函数关系并提出非线性黏塑性体．将该非线性黏塑性体与广义Burgers蠕变模型串联，建立可以描述岩石全蠕变过程的非线性黏弹塑性蠕变模型，根据叠加原理得到一维应力状态下的轴向蠕变方程．然后基于塑性力学理论指出岩石三维蠕变本构方程建立过程中的不足之处，并给出非线性黏弹塑性蠕变模型合理的三维蠕变方程．最后采用不同应力水平下砂岩轴向蠕变试验对模型合理性进行验证，结果表明：拟合曲线与试验曲线吻合度较高，所建蠕变模型能够很好地描述砂岩在不同应力水平下的蠕变变形规律，尤其对加速蠕变阶段的非线性特征描述效果很好，验证了模型的合理性．     

Real-time phase measurement and correction of dynamic multimode beam using a single spatial light modulator

In this Letter,a novel system for adaptively correcting the phase of a dynamic multimode beam is proposed.While using merely one spatial light modulator,the phase measurement of the first-order diffraction pattern and the correction of the zeroth diffraction order are simultaneously realized.The real-time experimental result is obtained at a control rate of 10 Hz.The power-in-the-bucket value is improved from 38.5%to 61.8%,even with fundamental mode content that is consistently below 30%.To the best of our knowledge,this is the first implementation of real-time adaptive correction of the entire multimode beam.     

基于图像重组和比特置乱的多图像加密

针对现有多图像加密算法只能同时加密多张同类型同大小的图像,适用范围不广、实用性差等问题,提出一种基于图像重组和比特置乱的多图像加密算法.该算法通过将任意数量、不同大小和不同类型的图像重新组合成新多灰度图,一次完成同时加密,极大提高了加密效率和适用范围.首先,依次提取所有待加密图像像素值重新组合出N张m×n新灰度图,并将其转化成m×n×8N二进制矩阵.然后,采用3D比特置乱方式,对高位页进行行列比特置乱,低位页进行整页比特置乱.最后,进行异或扩散操作,得到密文图像.高低位分开置乱提高了算法的抗噪声能力,最终密文信息熵达到7.999以上,很好地掩盖了明文的统计特性.构造一种新型Logistic与广义三阶Fibonacci级联的混沌系统产生随机序列,增加了初值和控制参数范围,扩大了密钥空间,使其达到8×10^84以上,极大地提高了抗穷举攻击能力.既提高了序列随机性,又同时保留了低维混沌系统的快速性.结合明文哈希值(SHA-256)产生密钥,明文像素值发生微小改变后密文像素值变化率达到0.996以上,极大地提高了的明文敏感性和算法抗选择明文攻击的能力.实验分析表明,提出的多图像加密算法安全性高、实用性强.     

超强频率梳激光场驱动下多光子共振谐波辐射的相位突变研究

本文从理论上研究了在双色频率梳激光场驱动下多光子谐波辐射光谱中的相位突变现象。我们利用Floquet理论非微扰地模拟了频率梳激光场与原子分子等量子系统的相互作用过程。谐波辐射信号是多光子偶极跃迁相干叠加的结果,通过调节频率梳激光场间的相对相位,可以相干地控制谐波辐射信号的强度。通过对谐波信号进行傅里叶变换,可以提取不同跃迁路径的相对相位信息。我们通过改变频率梳组激光场的强度和频率组分实现多光子跃迁频率,让其跨越共振跃迁频率时,谐波相位会发生突变。从而可以观测超强激光场驱动下量子系统共振跃迁频率的斯塔克能移。     

Room-Temperature,Metal-Free,and One-Pot Preparation of 2H-Indazoles through a Mills Reaction and Cyclization Sequence

The Mills reaction and cyclization of readily available 2-aminobenzyl alcohols and nitrosobenzenes using thionyl bromide provided 2H-indazoles in up to 88 % yields. In the metal-free process, acetic acid played a crucial role for the both Mills reaction and cyclization. A brominated 2H-indazole could also be obtained through the one-pot sequence.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.