费米6Li冷原子装载动力学的研究

我们用简单的系统实现了6 Li费米原子的冷却及俘获,研究了磁光阱中冷原子的装载动力学.由于其质量小和反冲动量大等特点,装载、冷却及俘获过程和其他的碱金属原子具有极大的不同.我们测量了装载率、单体碰撞损失率和原子数与温度的关系.基于气体动能和原子碰撞散射的理论计算来解释实验的测量结果.实现的长寿命6Li冷原子对将来研究超冷费米原子的量子简并及其强相互作用具有重要的意义.     

Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures

By using temperature-dependent current–voltage, variable-frequency capacitance–voltage, and Hall measurements,the effects of the thermal oxidation on the electrical properties of Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures are investigated. Decrease of the reverse leakage current down to six orders of magnitude is observed after the thermal oxidation of the In0.18Al0.82N/GaN heterostructures at 700oC. It is confirmed that the reverse leakage current is dominated by the Frenkel–Poole emission, and the main origin of the leakage current is the emission of electrons from a trap state near the metal/semiconductor interface into a continuum of electronic states associated with the conductive dislocations in the InxAl1-xN barrier. It is believed that the thermal oxidation results in the formation of a thin oxide layer on the InxAl1-xN surface, which increases the electron emission barrier height.     

Investigation of chlorine-based etchants in wet and dry etching technology for an InP planar Gunn diode

Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution (HCl/H 3 PO 4 ), and the other is Cl 2 -based gas mixture by utilizing inductively coupled plasma system (ICP). The results show that the wet etching (HCl-based) offers low cost and approximately vertical sidewall, whilst ICP system (Cl 2 -based) offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of ～ 0.6 μm/min and ～ 1.2 μm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.     

聚合物电解质中增塑剂的研究进展

聚合物电解质在锂离子电池中有很好的应用前景,已成为当前锂离子电池研究领域的热点之一.但由于其室温电导率低,在实际应用中受到诸多限制.通常采用在聚合物电解质中添加适当比例的增塑剂以提高其离子电导率的方法来弥补此缺陷.本文综述了聚合物电解质中增塑剂的增塑原理、增塑剂的种类以及电解质中新型增埋剂的研究状况.     

普拉托问题与道格拉斯──第一届菲尔兹奖获得者道格拉斯逝世三十周年纪念

普拉托问题与道格拉斯──第一届菲尔兹奖获得者道格拉斯逝世三十周年纪念王申怀（北京师范大学１００８７５）１８４７年比利时物理学家普拉托（Ｊ．Ｐｌａｔｅａｕ）提出了如下一个问题：给定了一条空间封闭曲线Ｃ，问能否找到一张以Ｃ为边界的曲面，使其面积达到最小？...     

热核多重碎裂研究

本文对单体热多重碎裂的理论与实验研究的国内外现状进行了评述；特别对国内近年来做出的实验结果进行了报导。     

SU(N)规范理论的倍步解

本文系统地研究了SU(N)规范群的单极解,将流行的同步球对称单极推广于倍步球对称情形,并因此给出了单极解的完全分类.以 SU(3),SU(4)为例进行了详细计算并讨论了角动量和拓扑量子数等问题.     

Effect of Regrown Graphite on the Growth of Large Gem Diamonds by Temperature Gradient Method

Generally, when growing high-quality large gem diamond crystals by temperature gradient method under high pressure and high temperature, the crystal growth rate is only determined by the temperature gradient. However, we find that the seed crystal cannot completely absorb all the diffused carbon sources, when growing gem diamonds under a higher temperature gradient. Other influence factors appear, and the growth rate of growing diamonds is partly dependent on the crystalline form of superfluous unabsorbed carbon source, flaky regrown graphite or small diamond crystals nucleated spontaneously. The present form is determined by the growth temperature if the pressure is fixed. Different from spontaneous diamond nuclei, the appearance of regrown graphite in the diamondstable region can retard the growth rate of gem diamonds substantially, even if the temperature gradient keeps unchanged. On the other hand, the formation mechanism of metastable regrown graphite in the diamond-stable region is also explained.     

SU(2)Thirring模型边界算子的Boson表达式

得到了有边界的SU(2)Thirring模型的反射矩阵Rab(θ),以及相应的边界算子的Boson表达式.     

高T_c Y-Ba-Cu-O系超导涂层

用等离子喷涂方法得到了液氮温区超导涂层,其起始转变温度为101K,零电阻温度为86K;涂层主要相组成为YBa_2Cu_3O_(9-δ)单相化合物,与同样原料配比制备的烧结块体性能相近。涂层致密,连通性好,可以作为一种超导电气元件制作工艺。