Cell-Free Synthesis of Selenoproteins in High Yield and Purity for Selective Protein Tagging

The selenol group of selenocysteine is much more nucleophilic than the thiol group of cysteine. Selenocysteine residues in proteins thus offer reactive points for rapid post-translational modification. Herein, we show that selenoproteins can be expressed in high yield and purity by cell-free protein synthesis by global substitution of cysteine by selenocysteine. Complete alkylation of solvent-exposed selenocysteine residues was achieved in 10 minutes with 4-chloromethylene dipicolinic acid (4Cl-MDPA) under conditions that left cysteine residues unchanged even after overnight incubation. Gd^III−Gd^III distances measured by double electron–electron resonance (DEER) experiments of maltose binding protein (MBP) containing two selenocysteine residues tagged with 4Cl-MDPA-Gd^III were indistinguishable from Gd^III−Gd^III distances measured of MBP containing cysteine reacted with 4Br-MDPA tags.     

基于哈希链的软件定义网络路径安全

针对软件定义网络中，控制器无法保证下发的网络策略能够在转发设备上得到正确执行的安全问题，提出一种新的转发路径监控安全方案。首先以控制器的全局视图能力为基础，设计了基于OpenFlow协议的路径凭据交互处理机制；然后采用哈希链和消息验证码作为生成和处理转发路径凭据信息的关键技术；最后在此基础上，对Ryu控制器和Open vSwitch开源交换机进行深度优化，添加相应处理流程，建立轻量级的路径安全机制。测试结果表明，该机制能够有效保证数据转发路径安全，吞吐量消耗比SDN数据层可信转发方案（SDNsec）降低20%以上，更适用于路径复杂的网络环境，但时延和CPU使用率的浮动超过15%，有待进一步优化。     

纳米氧化物对水泥基料化学收缩的影响

采用ASTM化学收缩试验方法,研究纳米SiO2、MgO、Al2O3对水泥基材料化学收缩变化的影响,明确纳米材料种类的差异性。结果表明,各实验组水泥基材料化学收缩均经历三阶段:急速变化区、缓慢变化区、平稳区,7d始水泥基材料化学收缩基本稳定。几种纳米材料的最佳掺量对水泥基材料的化学收缩改善作用大小为:SiO2>Al2O3>MgO。研究发现,纳米材料种类和掺量的不同对化学收缩的影响也较大,在选用时,需综合考虑。     

一种快速解压的无损压缩算法

随着信息技术的不断发展,大量数据给存储和传输都带来了巨大的挑战。数据压缩能够有效减少数据量,方便数据的处理和传输。无损压缩是一种利用数据的冗余特点进行压缩的压缩方法,解压时可以完全还原数据而不会有任何失真。在研究LZO算法的快速解压原理基础上,设计了一种新的压缩算法。该算法通过减少压缩数据中压缩块的数量,降低了解压程序的执行开销。测试结果表明,新算法可实现比LZO算法更快的解压速度。     

基于“IPv6+”的智能IP网络方案

随着第4次工业革命的到来，人类社会正逐步迈向万物互联的智能时代。智能时代需要更加自动化、智能化的IP网络，基于“IPv6+”的SRv6、BIERv6等技术是使能新一代IP网络的关键基础。全面阐述了“IPv6+”的技术内涵，结合华为在智能 IP 网络解决方案上的创新和思考，介绍了“IPv6+”在极简连接、SLA 保障、专网体验、质量感知和云网一体等多个解决方案场景的关键技术与典型应用，助力5G与云业务发展。     

Broad-Spectral-Range Sustainability and Controllable Excitation of Hyperbolic Phonon Polaritons in α-MoO3

Hyperbolic phonon polaritons (HPhPs) in orthorhombic-phase molybdenum trioxide (α-MoO₃) show in-plane hyperbolicity, great wavelength compression, and ultralong lifetime, therefore holding great potential in nanophotonic applications. However, its polaritonic response in the far-infrared (FIR) range remains unexplored due to challenges in experimental characterization. Here, monochromated electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) is used to probe HPhPs in α-MoO₃ in both mid-infrared (MIR) and FIR frequencies and correlate their behaviors with microstructures and orientations. It is found that low structural symmetry leads to various phonon modes and multiple Reststrahlen bands (RBs) over a broad spectral range (over 70 meV) and in different directions (55–63 meV and 119–125 meV along the b-axis, 68–106 meV along the c-axis, and 101–121 meV along the a-axis). These HPhPs can be selectively excited by controlling the direction of swift electrons. These findings provide new opportunities in nanophotonic and optoelectronic applications, such as directed light propagation, hyperlenses, and heat transfer.     

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.