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21.
This paper describes the reduction of hematite with ammonia for ironmaking, in which the effect of temperature on the products was examined. The results showed that the reduction process began at 430 °C during heating, and with an increase in temperature, the reduction mechanism changed apparently from a direct reduction of ammonia (Fe(2)O(3) + 2NH(3) → 2Fe + N(2) + 3H(2)O) to an indirect reduction via the thermal decomposition of ammonia (2NH(3) → N(2) + 3H(2), Fe(2)O(3) + 3H(2) → 2Fe + 3H(2)O) at temperatures over 530 °C. The final product obtained at 600 and 700 °C was pure metallic iron, in contrast with that formed at 450 °C, that is, a mixture of metallic iron and iron nitride. The results suggest the possibility of using ammonia as a reducing agent for carbonless ironmaking, which is operated at a much lower temperature than 900 °C in conventional coal-based ironmaking.  相似文献   
22.
Fully ion-implanted n+ self-aligned GaAs MESFETs with high microwave and ultra-low-noise performance have been fabricated. T-shaped gate structures composed of Au/WSiN are employed to reduce gate resistance effectively. A very thin and high-quality channel with high carrier concentration can be formed by adopting the optimum annealing temperature for the channel, and the channel surface suffers almost no damage by using ECR plasma RIE for gate formation. GaAs MESFETs with a gate length as short as 0.35 μm demonstrated a maximum oscillation frequency of 76 GHz. At an operating frequency of 18 GHz, a minimum noise figure of 0.81 dB with an associated gain of 7.7 dB is obtained. A Kf factor of 1.4 estimated by Fukui's noise figure equation, which is comparable to those of AlGaAs/GaAs HEMTs with the same geometry, reveals that the quality of the channel is very high  相似文献   
23.
Numerical analyses of a two-dimensional single bubble in a stagnant liquid and in a linear shear flow were conducted in the present study using the volume of fluid method, which is based on the local-instantaneous field equations. It was clarified that this method gives qualitatively appropriate predictions for the effects of the Morton number and the Eotvos number on fluctuating bubble motion in a stagnant liquid. Calculated velocity and pressure distributions indicated that the Karman vortex causes a sinuous movement of the bubble. As for the bubble motion in a linear shear flow, calculated bubbles migrated in a lateral direction. The direction of the lateral migration agreed to available experimental data. It was also confirmed that (i) the direction or the magnitude of the lateral migration is affected by the Eotvos and the Morton numbers, and (ii) the interaction among the internal flow of the bubble, the wake of the bubble and the external shear flow plays an essential role for the lateral migration.  相似文献   
24.
25.
伦潭水利枢纽工程项目建议书阶段采用了按效益比例和按替代工程投资比例两种分摊方法进行投资分摊 经分析比较 ,选择按效益比例分摊得到的各部门投资作为经济评价的依据  相似文献   
26.
MRI was performed in 13 patients who had microwave coagulation therapy (MCT) for hepatocellular carcinoma. Six of them underwent surgery after MRI. The area (including tumor) treated by MCT showed low to high intensity on T1WI, and low to isointensity on T2WI. No enhancement was obtained on dynamic MRI. Histologically, this area was supposed to be coagulation necrosis. On T1WI, only tumor showed high intensity within the MCT area in 8 patients, and nearly uniform intensity was observed in 5 patients. Histologically, residual cell nuclei were observed in the former, and nearly uniform coagulation necrosis in the latter. The marginal part of the MCT area exhibited low intensity on T1WI, and high intensity on T2WI. Strong enhancement was obtained on dynamic MRI, and histologically, granulation tissue was noted. In the hepatic parenchyma around the MCT area, a ring-or wedge-shaped high intensity part was observed in 7 patients on T2WI, and that part was enhanced on dynamic MRI. This finding was considered to reflect changes such as hepatic hyperperfusion. In terms of the capability of visualizing residual tumor after MCT, MRI was superior to CT. Furthermore, a clear distinction was seen between the MCT area and non-MCT area on T2WI and dynamic MRI. Thus, MRI was useful in the determination of additional therapy.  相似文献   
27.
In order to suppress the short-channel effects of subquarter-micrometer gate-length GaAs MESFETs, it is necessary to fabricate shallow n+ layers without any increase of parasitic resistance. To advance this line of research, a double shallow n+ -layer structure was investigated using a T-shaped resist mask and oblique ion implantation. Employing this shallow n+-layer structure, the threshold-voltage shift was suppressed and the subthreshold characteristics were improved for subquarter-micrometer gate-length FETs. A transconductance of 500 mS/mm for the 0.15-μm gate-length FET and a cutoff frequency of 33 GHz for the 0.35-μm gate-length FET were obtained  相似文献   
28.
Conjugated linoleic acid (CLA), a term describing a group of conjugated octadecadienoic acids that are both naturally occurring and formed during food processing, is the subject of considerable current research because of the recently reported antioxidant and anticarcinogenic properties of these compounds. Allylic hydroxy oleates (AHOs), secondary products of lipid autoxidation, have also been found in foods. By means of high-performance liquid chromatography with ultraviolet detection, gas chromatography/mass spectrometry and gas chromatography/matrix isolation/Fourier transform infrared spectroscopy, we determined that currently used acid-catalyzed methylation procedures convert AHOs to CLA and other products that potentially yield high values in determination of CLA in foods. A mixture of AHOs, containing mainly (8- and 11-)hydroxy-9-octadecadecenoates, was synthesized and tested by methylation procedures with the following catalysts: BF3, HCl, NaOMe and tetramethylguanidine. Both the BF3 and the HCl procedures converted AHOs to CLA. The base-catalyzed procedures did not convert AHOs to CLA.  相似文献   
29.
GaAs MESFET's with a gate length as low as 0.2 μm have been successfully fabricated with Au/WSiN refractory metal gate n+-self-aligned ion-implantation technology. A very thin channel layer with high carrier concentration was realized with 10-keV ion implantation of Si and rapid thermal annealing. Low-energy implantation of the n+-contact regions was examined to reduce substrate leakage current. The 0.2-μm gate-length devices exhibited a maximum transconductance of 630 mS/mm and an intrinsic transconductance of 920 mS/mm at a threshold voltage of -0.14 V  相似文献   
30.
Nanotrenches are induced by thermal annealing Au droplets on ZnSe surfaces. High-resolution scanning electron microscopy studies of the nanotrench structures reveal that the preferred migration directions of the catalyst droplets are along the direction family. On a ZnSe(111)B surface, each of the trenches is along one of the six directions while on a nonvicinal ZnSe(100) surface, the trenches are along a pair of antiparallel directions. Based on the results obtained from atomic force microscopy surface profiling and electron energy-loss spectroscopy chemical analysis techniques, a model is proposed to describe the possible formation mechanisms of the␣observed nanotrenches. The highly parallel nanotrenches induced on the Au/ZnSe(100) structure as revealed in this study are potentially useful as a template for in situ fabrication of ordered one-dimensional nanostructures (such as nanowires) of many materials.  相似文献   
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