Solution synthesis of crystallized AMO4 (A=Ba, Sr, Ca; M=W, Mo) film at room temperature

A well-crystallized AMO₄ (A=Ba, Ca, Sr; M=W, Mo) films have been prepared at room temperature through a simple solution reaction in respective alkaline solution at higher pH ranging from 12–14. Adopting the corrosion principle for oxidation of metal substrate, these double oxide films were carried out in presence of chemical driving force without any special apparatus or devices. Hydrogen peroxide was used to enhance the dissolution rate of metal substrates. The driving force for the film formation and growth were high concentration of A²⁺, MO₄²⁻ ions with high pH conditions. Average grain sizes of 8–10 μm with bipyramidal shaped particle were grown to the thickness of about 10–14 μm after 3–6 hours treatment. The crystallization of AMO₄ was characterized by three-dimensional nucleation. This work demonstrates the possibility of fabrication of functional ceramic films directly from the aqueous solution in a single step by solution reactions.     

Three-dimensional pin power reconstruction for the axially heterogeneous region in BWR

A three-dimensional pin power reconstruction method was proposed and verified by applying to the axially heterogeneous region problem of the BWR core calculation. Because the production assembly calculation has been carried out by two-dimensional deterministic calculation methods like current coupling collision probability or the method of characteristics, it has been difficult to predict the detailed three-dimensional heterogeneous pin power distribution of the axially heterogeneous region. Consequently, only radial intranodal homogeneous power distributions have been considered, and axial intranodal homogeneous power distributions have not been considered in the estimation of linear-heat-generation-ratio at common BWR core calculations.     

Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction

We have investigated the current pulse width dependence on current-driven magnetization reversal in double-barrier structures using GaMnAs-based magnetic tunneling junctions (MTJ) in order to clarify the origin of low threshold current density for current-driven magnetization reversal. Comparing with the case of single-barrier MTJ, the pulse-width dependence reveals that threshold current density is reduced by double-barrier MTJ. We confirmed that the threshold current density in the order of 10⁴ A/cm² is estimated considering the effect of current pulse width.     

An all-digital analog-to-digital converter with 12-/spl mu/V/LSB using moving-average filtering

A compact, high-resolution analog-to-digital converter (ADC) especially for sensors is presented. The basic structure is a completely digital circuit including a ring-delay-line with delay units (DUs), along with a frequency counter, latch, and encoder. The operating principles are: (1) the delay time of the DU is modulated by the analog-to-digital (A/D) conversion voltage and (2) the delay pulse passes through a number of DUs within a sampling (= integration) time and the number of DUs through which the delay pulse passes is output as conversion data. Compact size and high resolution were realized with an ADC having a circuit area of 0.45 mm/sup 2/ (0.8-/spl mu/m CMOS) and a resolution of 12 /spl mu/V (10 kS/s). Its nonlinearity is /spl plusmn/0.1% FS per 200-mV span (1.8-2.0 V), for 14-b resolution. Sample holds are unnecessary and a low-pass filter function removes high-frequency noise simultaneously with A/D conversion. Thus, the combination of this ADC and a digital filter that follows can eliminate an analog prefilter to prevent the aliasing before A/D conversion. Also, both this ADC can be shrunk and operated at low voltages, so it is an ideal means to lower the cost and power consumption. Drift errors can be easily compensated for by digital processing.     

Prediction of spectral reflectance factor distribution of automotive paint finishes

It is necessary to determine the accurate reflectance of painted surfaces for the review of paint finishes by computer graphics (CG) before actual painting of the exterior color of automobiles, and for quality control during production and inspection processes. We have optimized a method for measuring reflectance by using a statistical technique. We have found that the reflectance of a painted surface is best measured at an incident angle of 60° and at five aspecular angles of 10°, 18°, 28°, 40°, and 90°. Our method makes it possible to accurately reproduce reflection characteristics of paint finishes containing special flake pigments, such as pearl mica. Also it was proved that our method can apply not only to solid and metallic coatings but to all painted surfaces. © 2005 Wiley Periodicals, Inc. Col Res Appl, 30, 275–282, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/col.20125     

A new bubble-point-pressure correlation for the binary LiBr/H2O solution

In accord with the increasing concern about the global environmental issues, the absorption refrigeration heat-pump systems are currently being considered very promising and attractive. For the purpose of supporting the advanced R&D technology in this area, we have developed a novel correlation to represent the bubble-point pressures of LiBr H₂O solutions. The developed correlation covers the most extensive range of validity ever proposed: 273–483 K for temperatures, 0.05 kPa to 1.0 MPa for pressures. and 29 76 wt% LiBr for concentrations.Paper presented at the Twelfth Symposium on Thermophysical Properties, June 19–24, 1994. Boulder, Colorado, U.S.A.     

A 1.5-V full-swing BiCMOS logic circuit

A BiCMOS logic circuit applicable to sub-2-V digital circuits has been developed. A transiently saturated full-swing BiCMOS (TS-FS-BiCMOS) logic circuit operates twice as fast as CMOS at 1.5-V supply. A newly developed transient-saturation technique, with which bipolar transistors saturate only during switching periods, is the key to sub-2-V operation because a high-speed full-swing operation is achieved to remove the voltage loss due to the base-emitter turn-on voltage. Both small load dependence and small fan-in dependence of gate delay time are attained with this technique. A two-input gate fabricated with 0.3-μm BiCMOS technology verifies the performance advantage of TS-FS-BiCMOS over other BiCMOS circuits and CMOS at sub 2-V supply     

Hydrogen absorption by Pd-coated ZrNi prepared by using Barrel-Sputtering System

To improve the durability of hydrogen storage materials against surface poisoning by impurity gases, effectiveness of Pd-coating layer prepared by using a Barrel-Sputtering System was examined for ZrNi powder. The effectiveness of Pd-coating was evaluated by activation temperature, at which Pd/ZrNi poisoned by air could be activated to absorb hydrogen. Characterization of Pd-coated ZrNi (denoted as Pd/ZrNi) by scanning electron microscopy, electron probe microanalysis and X-ray diffraction showed that a uniform Pd-coating layer was formed with the barrel-sputtering system. It was found that the poisoned Pd/ZrNi sample could be activated even at 423 K to absorb hydrogen at room temperature. This exhibits remarkable contrast to bare ZrNi, which could be only activated appreciably above 1073 K. It is concluded that the Pd-coating by barrel sputtering is quite effective to avoid the effect of surface poisoning of powdery hydrogen storage materials. However, the activation at excessively high temperature resulted in the loss of high activity to absorb hydrogen. It was concluded that this phenomenon was associated with reactions between Pd and ZrNi to form PdZr and other byproducts.     

Extensions of polyacrylic acid ammonium salts in the adsorption layer to fluidize alumina slurries

An average shell volume occupied in the adsorption layer on alumina by a polyacrylic acid ammonium salts molecule (PAA) defined as the average area occupied by an adsorbed PAA on alumina multiplied by the average thickness of the water layer at the limit of thickening, has been calculated from the adsorbed amount of PAA and from the flow points of alumina in the presence of PAA of different molecular weights. A steric effect of the PAA dispersant on the dispersion of alumina resulted in a flow with no yield stress. This was due to the change of the extension of PAA in the adsorption shell from a sphere to an ellipsoid with a long axis which exceeded the effective distance that the van der Waals attraction force reaches at a molecular weight for the PAA of between 10 000–20 000.     

Beam test of the CsI(Tl) calorimeter for the BELLE detector at the KEK-B factory

We studied the performance of a prototype electromagnetic calorimeter for the BELLE detector at the KEK proton synchrotron for an energy range of 0.25–3.5 GeV. The prototype consisted of an array of 6 × 5 CsI(Tl) crystals with 30 cm length (16.2 radiation lengths) and about 6 cm × 6 cm cross section. The scintillation light of each CsI(Tl) crystal was read out by two large-area PIN photodiodes and charge-sensitive preamplifiers attached at the rear face of the crystal. We measured the energy and position resolution for electrons and the e/π separation for two sets of matrix configurations: one corresponded to the center and the other to the edge of the barrel calorimeter. The overall performance measured by the test proves that the prototype calorimeter is satisfactory for the use in the BELLE detector.