Second harmonic generation from a ferroelectric film

We derive an expression for transmittivity (T_SHG) of second harmonic generation (SHG) signals from a ferroelectric (FE) film. Intensities of up and down fields in the medium are investigated in relation to T_SHG. The derivations are made based on undepletion of input fields and nonlinear wave equation derived from the Maxwell equations. We present two cases: film without mirrors and with partial mirrors. Expressions for the newly derived nonlinear susceptibility coefficients of SHG for real crystal symmetry [J. Opt. Soc. Am. B 19 (2002) 2007] are used to get more realistic results. Variations in T_SHG with respect to film thickness are illustrated.     

Synthesis of Rice Processing Plants. I. Development of Simplified Models

This article, the first of three articles on the synthesis of rice processing plants, focuses on the development of simplified mathematical models necessary for use in optimizing rice processing plants. The second concentrates on the optimal synthesis of a rice plant and the third on the sensitivity of the optimization to uncertainty in model parameters. Existing models for rice processing unit operations are not suitable for flowsheet optimization and new models need to be developed to overcome numerical difficulties that occur in optimization applications, specifically in mixed integer nonlinear programming (MINLP) applications. Simplified models of the drying, cooling, and tempering units are developed. In addition head rice yield models, used as a quality indicator, energy consumption, and economic models were also developed. Naturally, the new models exhibit some mismatch with respect to the existing models from which they were developed. However, a sensitivity analysis, presented in Part III, has shown that the optimal flowsheet structure was not sensitive to a lack of fit between the simplified and complex models. The simplified models were found adequate to be appropriate for use at the synthesis stage.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

Effect of Sb implantation on copper silicides formation and morphology after annealing of Cu/Si structures

In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×10¹⁴ or 5×10¹⁵ at. cm⁻² doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu₃Si and Cu₄Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb⁺ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu₄Si phase whereas the Cu₃Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed.     

A VQ-based blind image restoration algorithm

Learning-based algorithms for image restoration and blind image restoration are proposed. Such algorithms deviate from the traditional approaches in this area, by utilizing priors that are learned from similar images. Original images and their degraded versions by the known degradation operator (restoration problem) are utilized for designing the VQ codebooks. The codevectors are designed using the blurred images. For each such vector, the high frequency information obtained from the original images is also available. During restoration, the high frequency information of a given degraded image is estimated from its low frequency information based on the codebooks. For the blind restoration problem, a number of codebooks are designed corresponding to various versions of the blurring function. Given a noisy and blurred image, one of the codebooks is chosen based on a similarity measure, therefore providing the identification of the blur. To make the restoration process computationally efficient, the principal component analysis (PCA) and VQ-nearest neighbor approaches are utilized. Simulation results are presented to demonstrate the effectiveness of the proposed algorithms.     

Effect of the Distribution of Manganese Ions on the Properties of Mn-Doped (Ba,Y)TiO3 PTCR Ceramics

The electrical properties and microstructure of (Ba,Y)TiO₃ PTCR ceramics were studied. The results indicate that the Mn ions increase the intergranular barrier height and produce a high-resistance layer on the grain surface. The temperature-dependent resistances of the grain bulk, surface layer, and grain boundaries, the temperature coefficient of resistance, and the magnitude of the varistor effect were assessed as a function of Mn content.     

QR factoring to compute the GCD of univariate approximate polynomials

We present a stable and practical algorithm that uses QR factors of the Sylvester matrix to compute the greatest common divisor (GCD) of univariate approximate polynomials over /spl Ropf/[x] or /spl Copf/[x]. An approximate polynomial is a polynomial with coefficients that are not known with certainty. The algorithm of this paper improves over previously published algorithms by handling the case when common roots are near to or outside the unit circle, by splitting and reversal if necessary. The algorithm has been tested on thousands of examples, including pairs of polynomials of up to degree 1000, and is now distributed as the program QRGCD in the SNAP package of Maple 9.     

Nonstationary Simulation Model of Absorber with Falling Film of Suspension

A nonstationary model of SO₂ absorption from a gas phase to a countercurrent falling film of absorbing slurry was developed. Laminar, wavy and turbulent film structures were considered based on published information. Resistances to the mass transfer on the gas and the liquid sides of the interphase were considered, together with chemical reactions in the liquid phase. Relevant chemical equilibria in the liquid phase were modeled. Original experimental data on the neutralization reagent dissolution rate presented as a polydispersed two‐phase system of solids and on the rate of dissolved sulfite oxidation were used. The model was verified with experimental data from a laboratory‐scale falling‐film absorber using a single vertical tube under various geometrical and operating conditions, and a very good agreement was found with the experiment. Parametric sensitivity analysis showed the critical parts of the model.     

Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).