AlGaN/GaN HEMTs-an overview of device operation and applications

Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.     

Concurrent error detection of fault-based side-channel cryptanalysis of 128-bit RC6 block cipher

Fault-based side channel cryptanalysis is very effective against symmetric and asymmetric encryption algorithms. Although straightforward hardware and time redundancy based concurrent error detection (CED) architectures can be used to thwart such attacks, they entail significant overhead (either area or performance). In this paper we investigate two systematic approaches to low-cost, low-latency CED for symmetric encryption algorithm RC6. The proposed techniques have been validated on FPGA implementations of RC6, one of the advanced encryption standard finalists.     

Viscous behaviour of glass-forming liquids: a thermodynamic approach

The temperature dependence of the viscosity of the undercooled melts exhibits an important role in the study of nucleation, crystal growth and the glass-forming ability of materials. Several attempts have been made to study the viscous behaviour of the glass-forming melts and these investigations are mainly based on free volume theory as well as on the configurational entropy model. In the present investigation, an attempt has been made to correlate the thermodynamic parameters with the viscosity of the glass-forming melts and to study the temperature dependence of the viscosity of undercooled liquids on the basis of the free volume theory as well as on the basis of the configurational entropy model of Adam and Gibbs. The entire study is confined on the expression for thermodynamic parameters reported by the authors recently. The expression obtained has been successfully applied to study the temperature dependence of the viscosity of the metallic, molecular and oxide glass-forming liquids.     

Thermal stability and high-temperature wear of Ti–TiN and TiN–CrN nanomultilayer coatings under self-mated conditions

Ti–TiN and TiN–CrN nanomultilayers were thermally stable retaining uniform and sharp layer interfaces up to 24 h at 773 K, without any oxidation or phase transformation accompanying each individual layer. Decreasing the multilayer spacing resulted in an increase in the hardness in both cases. The coating hardness was found to be independent of the substrate type, when applied on HS718, Ti64 and HCHCr substrates. In scratch testing, the multilayers displayed a better resistance to the onset of failure, as compared to the monolayer TiN. The substrate plasticity played an important role in determining the coating failure mode. Self-mated wear tests revealed the CrN–TiN system to exhibit the best wear behaviour, both at room temperature and at 773 K. The Ti–TiN coatings are more accommodative with all three substrates, as compared to TiN–CrN and TiN.     

Efficient algorithms for selection of recovery points in tree taskmodels

Efficient solutions to the problem of optimally selecting recovery points are developed. The solutions are intended for models of computation in which task precedence has a tree structure and a task may fail due to the presence of faults. An algorithm to minimize the expected computation time of the task system under a uniprocessor environment has been developed for the binary tree model. The algorithm has time complexity of O(N₂), where N is the number of tasks, while previously reported procedures have exponential time requirements. The results are generalized for an arbitrary tree model     

High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's(JHEMT's) with regrown ohmic contacts by MOCVD

A technology for increasing both the two-terminal gate-drain breakdown and subsequently the three-terminal-off-state breakdown of AlInAs/GaInAs high-electron-mobility transistors (HEMTs) to record values without substantial impact on other parameters is presented. The breakdown in these structures is dependent on the multiplication of electrons injected from the source (channel current) and the gate (gate leakage) into the channel. In addition, holes are generated by high fields at the drain and are injected back into the gate and source electrodes. These phenomena can be suppressed by increasing the gate barrier height and alleviating the fields at the drain. Both have been achieved by incorporating a p⁺-2DEG junction as the gate that modulates the 2DEG gas and by utilizing selective regrowth of the source and drain regions by MOCVD. The 1-μm-gate-length devices fabricated have two-terminal gate-drain and three-terminal-off-state breakdown voltages of 31 V and 28 V, respectively     

Loss of precious metal from Pt-Rh alloy under refractory oxide environments

Loss of precious metals from a Pt-10 wt% Rh alloy was studied at 1300° C in refractory oxides and fused quartz environments. After 60 and 150 h annealings, samples exposed to gaseous environments showed significant weight loss. The surface was attacked and characterized by micron-sized pits, as well as river-like striations. The pits were found to be enriched with silicon and/or aluminium depending upon the heating environment. Laser Raman microprobe identified that the major compound formed in the pits is -cristobalite.Direct solid state contact of Pt-Rh with Al₂O₃ and SiO₂ showed interactions between materials. The interaction was more extensive between Pt-Rh with SiO₂ than with Al₂O₃. On the other hand, no evidence of interaction except pitting and striation was observed on Pt-Rh when exposed to a vapour environment.The presence of pits and striation patterns indicated that refractory oxides attacked Pt-Rh under atmospheric conditions, and gave rise to the weight loss. Calculation of weight loss by an oxidation mechanism shows one to two orders of magnitude lower value than the actual weight loss. A new loss mechanism is proposed and discussed in this article.     

An intelligent hybrid approach for hepatitis disease diagnosis: Combining enhanced k‐means clustering and improved ensemble learning

In real world, the automatic detection of liver disease is a challenging problem among medical practitioners. The intent of this work is to propose an intelligent hybrid approach for the diagnosis of hepatitis disease. The diagnosis is performed with the combination of k‐means clustering and improved ensemble‐driven learning. To avoid clinical experience and to reduce the evaluation time, ensemble learning is deployed, which constructs a set of hypotheses by using multiple learners to solve a liver disease problem. The performance analysis of the proposed integrated hybrid system is compared in terms of accuracy, true positive rate, precision, f‐measure, kappa statistic, mean absolute error, and root mean squared error. Simulation results showed that the enhanced k‐means clustering and improved ensemble learning with enhanced adaptive boosting, bagged decision tree, and J48 decision tree‐based intelligent hybrid approach achieved better prediction outcomes than other existing individual and integrated methods.     

Chemical composition and bond structure of carbon-nitride films deposited by CH4/N2 dielectric barrier discharge

Carbon nitride films have been deposited by dielectric barrier discharge with a CH₄/N₂ gas mixture at different conditions. Fourier Transform Infrared (FTIR) spectroscopy, X-ray photo electron spectroscopy (XPS), Raman spectroscopy, Atomic force microscopy (AFM) and ellipsometry were used to systematically study chemical composition, bond structure and surface morphology of deposited films. Various bonds between carbon, nitrogen, hydrogen, and also oxygen were observed.