排序方式: 共有28条查询结果,搜索用时 15 毫秒
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在氧化镓(Ga2O3)材料p型掺杂困难的背景下,Ga2O3 p-n异质结器件在氧化镓器件的应用中起着重要作用.因此,寻找一种高效、经济的制备方法制备Ga2O3异质结对器件应用具有重要意义.在这项工作中,我们成功基于低成本、无真空的雾化学气相沉积(Mist-CVD)外延制备了单晶氧化镍(NiO)和β-Ga2O3异质结.其中,NiO(111)和β-Ga2O3(-201)的XRD摇摆曲线半高宽分别为0.077°和0.807°.NiO与β-Ga2O3之间的能带表现为Ⅱ型异质结构.基于此异质结,我们制备了准垂直器件,器件具有明显的p-n结整流特性,反向击穿电压为117 V.本工作为β-Ga2O3异质p-n结的制备提供了一种低成本、高质量的方法. 相似文献
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Ti/Al/Au ohmic contacts to p-type 4H-SiC in terms of a different annealing time and Ti composition are reported. At 1050℃, proper increase in annealing time plays a critical role in the Schottky to ohmic contact conversion. With the optimized annealing time, the contact with a high Ti content yields a lower specific contact resistivity(ρc) of 6.4×10-5 Ω·cm2 compared with the low-Ti contact. The annealed surface morphology and phase resultants were examined by scanning electron microscopy(SEM) and X-ray diffraction(XRD), respectively. For the better ohmic contact, element distribution and chemical states were qualitatively identified by X-ray photoelectron spectroscopy(XPS) depth analysis. In particular, the presence of C and a Si-related phase was discussed and associated with the change in the surface status of the as-grown epilayer of 4H-SiC during annealing. The results reveal that the out-diffused C and Si atoms, with an approximate atomic ratio of 1:1 in the contact layer, can combine to form an amorphous Si-C state. The polycrystalline graphite instead of an unreacted C cluster in the whole alloyed structure and an extra nanosize graphite flake on the outermost surface of the annealed contact were confirmed by Raman spectroscopy. 相似文献
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冷却方式对聚乙烯密度测定的影响 总被引:1,自引:0,他引:1
用试验确定冷却方式--空冷和水冷对聚乙烯树脂密度测定的影响程度。结果表明,在水中冷却的试样密度测定值偏高。对试验数据整理后发现两种冷却方式形成的偏差值相对恒定。 相似文献
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研究了精纺纯毛织物在应用有机硅防缩剂处理后的色差变化,应用色度学理论对色差的原因进行了分析.初步得出的结论是附着在毛纤维上的有机硅大分子薄膜对入射在织物上的光线有部分吸收,导致处理后织物的亮度降低,这是色差产生的主要原因. 相似文献