Thermal decoloration kinetics of spirooxazines in Ormocer coatings prepared via sol-gel processing

Two free and one silylated (silane-substituted) photochromic spirooxazines are doped into organically modified ceramics (Ormocer) coatings by sol-gel processing and the thermal decoloration kinetics of these coatings are investigated and compared with the corresponding ethanol solutions and PMMA coatings. The decoloration behaviour of the two free dyes (SO-1 and SO-2) in the Ormocer coatings is similar to that in ethanol solutions, obeying a first-order mechanism and possessing almost the same decoloration rates as in ethanol. This suggests that the dye molecules encapsulated within the pores of the solid matrix are as free as those in ethanol solutions. The silylated dye (SO-3) in the Ormocer coatings, however, exhibits a considerably lower decoloration rate than the corresponding free dye (SO-1) and evident deviation from the first-order mechanism. This indicates apparently that the degree of freedom of the dye molecules is reduced by the silylation. These results are discussed on the basis of solvent polarity, porous structure of the Ormocer coating, and the dye-to-matrix connectivity.     

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

Experimental densities for compressed R134a

This paper reports densities of compressed R134a (1,1,1,2-tetrafluoroethane) determined by using a contiuously weighed pycnometer at 20 K intervals between 180 and 380 K at pressures from slightly greater than the vapour pressure to 70 MPa. The results are accurate to within ±0.1%. Saturated liquid densities derived by extrapolation from the experimental values agree with other reported values to within ±0.3%.     

吸入短寿命氡子体动物肺组织剂量与体重关系的探讨

本文介绍吸入短寿命氡子体的不同种动物肺组织吸收剂量与体重的关系。实验结果表明,吸收剂量随体重的增加而减小。     

单壁碳纳米管的制备及生长特性研究

采用Fe/MgO作为催化剂 ,催化裂解CH4制备了较纯的单壁碳纳米管 ,用TEM和Raman对碳纳米管进行了表征 ,对不同生长温度下制备的碳纳米管Raman径向呼吸振动峰 (RBM)进行了分析 ,研究了生长温度对单壁碳纳米管生长特性和结构特性的影响     

动力配煤高温复合固硫剂研究

分析了高温复合固硫剂各成分的作用，实验研究了在不同配比的燃烧试验下，各成分对燃煤着火和燃烧以及对炉渣固硫的影响，得出了该煤种高温复合固硫剂的最佳配方。     

数字多媒体广播技术现状及前景

数字多媒体广播（DMB）是从数字音频广播（DAB）基础上发展起来的一种新型广播技术。数字音频广播是在调幅AM和调频FM之后的第三代广播技术。通过对数字多媒体技术的介绍较全面地阐述了其技术系统、功能、现状及发展前景。     

一种应用于二次布局的有效划分方法

提出了一种基于二次布局的结合MFFC结群和hMETIS划分的算法.实验表明:这种方法能得到很好的布局结果,但是运行消耗的时间比较长.为了缩短划分在二次布局中运行的时间,提出了一种改进的结群算法IMFFC,用它在二次布局中做划分.与前者相比较,这种方法虽然布局质量稍差,但速度更快.     

Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.