未增塑聚氯乙烯(PVC-U)异型材配方基础

PVC-U异型材配方十分复杂,常用原料通常在10种以上。根据大连实德集团实际生产情况,这10多种原料通常以7大组分的方式进行配料和生产。文中就该配方中7大组分的分类、特点及应用情况分别进行了详细介绍。     

比较法在房地产开发中的应用

对"比较法"原理和应用情况进行了分析,说明其在房地产开发中能够科学地预测房地产的价格和收益,从而提高财务分析的科学性和权威性,为项目决策提供科学依据,以促进"比较法"在房地产开发中的应用。     

Onset of buoyancy-driven convection in melting from below

When a horizontal homogeneous solid is melted from below, convection can be induced in a thermally unstable melt layer. In this study the onset of buoyancy-driven convection during time-dependent melting is investigated by using similarly transformed disturbance equations. The critical Rayleigh numbers based on the melt-layer thickness are found numerically for various conditions. For small superheats, the present predictions approach the well known results of classical Rayleigh-Bénard problems, that is, critical Rayleigh numbers are located between 1,296 and 1,708, regardless of the Prandtl number. However, for high superheats the critical Rayleigh number increases with an increase in phase change rate but with decrease in Prandtl number.     

有粘结预应力在252m地下室顶板中的应用

在总长度 2 5 2m的超长不设缝地下室顶板中 ,采用了预应力、设置后浇带等综合抗裂技术 ,并对有粘结预应力平板的设计理论、施工工艺、锚固体系及超长结构预应力损失控制和抗裂控制作了深入研究。     

Catalytic oxidation of naphthalene using a Pt/Al2O3 catalyst

Polycylic aromatic hydrocarbons (PAHs) are listed as carcinogenic and mutagenic priority pollutants, belonging to the environmental endocrine disrupters. Most PAHs in the environment stem from the atmospheric deposition and diesel emission. Consequently, the elimination of PAHs in the off-gases is one of the priority and emerging challenges. Catalytic oxidation has been widely used in the destruction of organic compounds due to its high efficiency (or conversion of reactants), its economic benefits and good applicability.

This study investigates the application of the catalytic oxidation using Pt/γ-Al₂O₃ catalysts to decompose PAHs and taking naphthalene (the simplest and least toxic PAH) as a target compound. It studies the relationships between conversion, operating parameters and relevant factors such as treatment temperatures, catalyst sizes and space velocities. Also, a related reaction kinetic expression is proposed to provide a simplified expression of the relevant kinetic parameters.

The results indicate that the Pt/γ-Al₂O₃ catalyst used accelerates the reaction rate of the decomposition of naphthalene and decreases the reaction temperature. A high conversion (over 95%) can be achieved at a moderate reaction temperature of 480 K and space velocity below 35,000 h⁻¹. Non-catalytic (thermal) oxidation achieves the same conversion at a temperature beyond 1000 K. The results also indicate that Rideal–Eley mechanism and Arrhenius equation can be reasonably applied to describe the data by using the pseudo-first-order reaction kinetic equation with activation energy of 149.97 kJ/mol and frequency factor equal to 3.26 × 10¹⁷ s⁻¹.     

解吸塔换热器706C结堵的原因分析及其对环保装置正常运行的影响

本文详细分析了解吸塔换热器结堵的原因和对环保装置正常运行的影响,并针对性地提出了防范和处理措施。     

桉木硫酸盐浆不同漂白技术的评价

高白度漂白商品浆的白度已从通常的88%～90%提高到更高的水平,达到92%.这种高白度的要求导致了纸厂使用高价格光学漂白剂,以及过量使用这种添加剂的环境风险.     

GJB712A-2001航天用GH4169高温合金锻制圆饼规范介绍

介绍了GH 4 16 9高温合金锻制圆饼规范的修订内容 ,对其主要技术指标作了简要说明 ,并与国外同类标准进行了比较。     

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.