On teletraffic applications to OBS

We provide teletraffic models for loss probability evaluation of optical burst switching (OBS). We show that the popular Engset formula is not exact for OBS modeling and demonstrate that in certain cases it is not appropriate. A new exact model is provided. The various models are compared using numerical results for various OBS alternatives with and without burst segmentation.     

Pile Response Adjacent to Braced Excavation

The excavation of soil for the construction of basements or cut-and-cover tunnels results in ground movements. One particular concern is that the excavation-induced lateral soil movements may adversely affect any nearby pile foundation. The lateral loads imposed by the soil movements induce bending moments and deflections in the pile, which may lead to structural distress and failure. This paper presents the results of an actual full-scale instrumented study that was carried to examine the behavior of an existing pile due to nearby excavation activities resulting from the construction of a 16 m deep cut-and-cover tunnel. The pile was located 3 m behind a 0.8 m thick diaphragm wall. Excavation to the formation level that was 16 m below the ground surface resulted in a maximum lateral pile movement of 28 mm. A simplified numerical procedure based on the finite-element method was used to analyze the pile response. Generally, the theoretical predictions were in reasonable agreement with the measured results.     

H级干式变压器的现状及其发展前景

介绍了H级干式变压器的分类、NOMEX^R纸的技术性能、各类H级干式变压器的结构特点与技术性能，将H级干式变压器与环氧浇注式干式变压器进行了比较，并展望了H级干式变压器未来在我国的发展前景。     

Lipase‐catalyzed dynamic kinetic resolution of (R,S)‐fenoprofen thioester in isooctane

A lipase‐catalyzed enantioselective hydrolysis process under in situ racemization of the remaining (R)‐thioetser substrate with trioctylamine as the catalyst was developed for the production of (S)‐fenoprofen from (R,S)‐fenoprofen 2,2,2‐trifluoroethyl thioester in isooctane. Detailed investigations of trioctylamine concentration on the enzyme activation and the kinetic behavior of the thioester in racemization and enzymatic reactions were conducted, in which good agreement between the experimental data and theoretical results was observed. © 2002 Society of Chemical Industry     

微电量测量中信号的拾取和放大

本文介绍了静电计级运算放大器在工业微电量测量中的应用,并且给出了实际的电路结构和相关的噪声解决办法。     

Improved method for HgI2 crystal growth and detector fabrication

Instead of the temperature oscillation method (TOM), a modified vapor growth method was applied in this paper to grow large HgI₂ crystals with fewer lattice defects by providing a relatively stable temperature field during growth. And a new processing technique of HgI₂ crystals was developed for detector fabrication by merging solution string-sawing and hand-cleaving. The lattice deformations caused during cleaving were reduced greatly by eliminating passivated layers on the sawed crystal platelets before cleaving.     

聚吡咯导电材料合成方法的进展

本文对聚吡咯及聚吡咯导电复合物的合成方法进行了综述。     

A selective CVD tungsten-strapped polysilicon local interconnectiontechnology

A local interconnection technology utilizing polysilicon strapped with selective-chemical-vapor-deposited (CVD) tungsten has been developed. Both n- and p-channel MOS transistors have been successfully fabricated using this technology. Tungsten deposited on polysilicon is an attractive gate shunt and local interconnection material because of its low resistivity, immunity to dopant segregation and diffusion, and resistance to electromigration. A potential problem of this technology is the excessive diode leakage current associated with strapping shallow source/drain diodes with tungsten. The leakage is attributed to defects induced by the heavy source/drain implant, which can be effectively eliminated with a proper annealing procedure     

A theory for the formation of tetrahedral amorphous carbon including deposition rate effects

A theoretical model is presented to describe the effect of ion beam bombardment rate on the formation of tetrahedral amorphous carbon (ta-C) films. The critical ion energy, E_c, corresponding to a 50% sp³ content in the films, is found to be dependent on both the effective thermal resistance and the ion beam bombardment rate. In the model, the ‘window’ width in the ion energy scale for the formation of ta-C material increases with decreasing deposition rate and with a reduction in the effective thermal resistance, until limited by lower and upper boundary thresholds. Experimental data are reproduced by the model. The plasmon energy, which correlates with sp³ fraction, is found experimentally of be higher for lower deposition rate and smaller effective thermal resistance. Data points for high sp³ content ta-C films deposited on silicon substrates at room temperature occupy a region in the ion energy-deposition rate (E-r) diagram similar to that predicated from the theory.