A snapback suppressed reverse-conducting IGBT with uniform temperature distribution

A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plug is embedded in the n-buffer layer to obstruct the electron current from flowing directly to the n-collector, which achieves the hole emission from the p-collector at a small collector size and suppresses the snapback effectively. Moreover, the current is uniformly distributed in the whole wafer at both IGBT mode and diode mode, which ensures the high temperature reliability of the RC-IGBT. Additionally, the P-plug acts as the base of the N-buffer/P-float/N-buffer transistor, which can be activated to extract the excessive carriers at the turn-off process. As the the simulation results show, for the proposed RC-IGBT, it achieves almost snapback-free output characteristics with a uniform current density and a uniform temperature distribution, which can greatly increase the reliability of the device.     

Partial-SOI high voltage P-channel LDMOS with interface accumulation holes

A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (E_I) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of E_I and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.     

Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer

We report an effective method to improve the formation of nickel stanogermanide(Ni Ge Sn) by the incorporation of a platinum(Pt) interlayer. After the Ni/Pt/Ge Sn samples are annealed we obtain uniform Ni Ge Sn thin films,which are characterized by means of sheet resistance, atomic force microscopy, scanning electron microscopy,cross-section transmission electron microscopy, and energy dispersive x-ray spectroscopy. These results show that the presence of Pt increases the smoothness and uniform morphology of Ni Ge Sn films.     

一种永磁磁共振中磁体涡流场的测量方法

磁共振成像（Magntic Resonance Imaging,MRI）技术是一种先进的医疗影像技术.在MRI系统中,通过梯度线圈电流快速切换方向,对待测区域施加梯度磁场,产生的梯度磁场会在其周围的金属体内激发出变化的涡旋电场,进而导致金属体内闭合的回路中产生对原来的梯度电流起抑制作用的感生电流,也就是我们所说的涡流.本文介绍了一种测量磁体涡流场的方法,结合电磁感应定律,设计了一种磁体涡流场测量装置,通过硬件采集以及软件处理的方法,将理想梯度场与实际磁场进行相减并将波形实时呈现,实验结果表明该方法可实现对磁体涡流场的测量.     

两种新型芴类Schiff碱的合成及其溶剂效应和聚集诱导发光性质

2-氨基-9,9-二甲基芴分别与2-羟基-1-萘甲醛和4-二乙胺基水杨醛经Schiff碱反应合成了两种新型芴类Schiff碱 (4和5),其结构经¹H NMR, ¹³C NMR, ESI-MS和元素分析表征。通过紫外-可见吸收光谱和荧光发射光谱初步研究了4和5的溶剂效应和聚集诱导发光性质。结果表明： 4和5的紫外吸收和荧光光谱受质子性溶剂的影响明显高于非质子性溶剂,同时两者具有良好的聚集诱导发光增强效应。THF-H₂-O体系中含水量分别达到60%和70%时, 4和5的荧光强度最大。     

Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance

An analytical model for a novel triple reduced surface field(RESURF) silicon-on-insulator(SOI) lateral doublediffused metal–oxide–semiconductor(LDMOS) field effect transistor with n-type top(N-top) layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional(2D) Poisson's equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage(BV) is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer(Q_(ntop)) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results,showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.     

高纯硅中补偿性杂质的光热电离光谱

首先测量了高纯n型硅样品在接近液氦温度区域内随温度变化的光热电离光谱，确定了硅样品的最佳光热电离温度范围. 在该温度范围内，在有本征带隙光照射条件下，测量了样品的高分辨率光热电离光谱，同时观察到了来自主要浅杂质施主磷以及补偿性杂质硼的正信号. 随后，应用外加磁场，对硼的光热电离光谱进行了研究，发现来自硼的光热电离信号，在外加磁场作用下，发生了由正向负信号的转变. 通过对该现象进行分析讨论，排除了该现象是温度效应的可能，指出普遍用来解释补偿性杂质光热电离响应的Darken模型存在不足，而少数载流子快速复合模     

Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

This paper describes the successful fabrication of 4H-SiC junction barrier Schottky(JBS) rectifiers with a linearly graded field limiting ring(LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2(about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.     

基于阿贝正弦条件的光子等频图和能带结构测试系统

通过结合电磁波在周期性纳米材料中的传播特性以及阿贝完备成像理论中的阿贝正弦条件,提出了一种快速测试光子等频图和能带结构的测试技术和光学检测系统。将无限筒长显微物镜作为一种把波矢空间直接转换到实空间的变换器件,并通过配备二维面阵CCD的光栅光谱仪实现了对周期性纳米材料的等频图和能带结构的一次性拍照,真正实现了方便、快速和无损的探测技术。利用自行搭建的测试系统对用自组装方法制备的二维周期性纳米材料进行了相关光学测试,通过实验测试结果和相关理论计算的对比验证了系统的可行性和可靠性,从而说明该光学系统在研究周期性纳米材料的光学特性方面具有一定的优势。     

水平变化浅海声波导中模态特征频率与声源距离被动估计

针对水平变化浅海声波导中声源宽容性被动测距问题,理论分析了海底地形水平缓变浅海波导中卷绕变换基础上的低频声场特征频率.推导了绝对硬海底时水平变化波导中声场模态时频到达结构以及模态瞬时相位的表达式,由该表达式给出了特征频率与收发距离的变化关系,进而提出了水平变化浅海波导中声源距离被动估计的修正方法,通过仿真和实验对理论与方法进行了验证.