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101.
102.
Topological probability and connection strength induced activity in complex neural networks 下载免费PDF全文
Recent experimental evidence suggests that some brain activities can be assigned to small-world networks. In this work, we investigate how the topological probability p and connection strength C affect the activities of discrete neural networks with small-world (SW) connections. Network elements are described by two-dimensional map neurons (2DMNs) with the values of parameters at which no activity occurs. It is found that when the value of p is smaller or larger, there are no active neurons in the network, no matter what the value of connection strength is; for a given appropriate connection strength, there is an intermediate range of topological probability where the activity of 2DMN network is induced and enhanced. On the other hand, for a given intermediate topological probability level, there exists an optimal value of connection strength such that the frequency of activity reaches its maximum. The possible mechanism behind the action of topological probability and connection strength is addressed based on the bifurcation method. Furthermore, the effects of noise and transmission delay on the activity of neural network are also studied. 相似文献
103.
Neutron Spectroscopy Evidence for a Possible Magnetic-Field-Induced Gapless Quantum-Spin-Liquid Phase in a Kitaev Material α-RuCl3 下载免费PDF全文
赵晓雪 冉柯静 王靖珲 鲍嵩 上官艳艳 黄振涛 廖俊波 张波 承舒凡 徐豪 王巍 董召阳 孟思勤 陆智伦 Shin-ichiro Yano 于顺利 李建新 温锦生 《中国物理快报》2022,(5):149-157
As one of the most promising Kitaev quantum-spin-liquid(QSL) candidates,α-RuCl3 has received a great deal of attention.However,its ground state exhibits a long-range zigzag magnetic order,which defies the QSL phase.Nevertheless,the magnetic order is fragile and can be completely suppressed by applying an external magnetic field.Here,we explore the evolution of magnetic excitations of α-RuCl3 under an in-plane magnetic field,by carrying out inelastic neutron scattering measu... 相似文献
104.
Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carbide power MESFETs 下载免费PDF全文
This paper reports that multi-recessed gate 4H-SiC MESFETs
(metal semiconductor filed effect transistors) with a gate periphery
of 5-mm are fabricated and characterized. The multi-recessed region
under the gate terminal is applied to improve the gate--drain
breakdown voltage and to alleviate the trapping induced
instabilities by moving the current path away from the surface of
the device. The experimental results demonstrate that microwave
output power density, power gain and power-added efficiency for
multi-finger 5-mm gate periphery SiC MESFETs with multi-recessed
gate structure are about 29%, 1.1dB and 7% higher than those
of conventional devices fabricated in this work using the same
process. 相似文献
105.
数字波束形成(DBF)阵列能够充分利用阵列天线所获取的空间信息,通过信号处理技术使波束获得超分辨率和低旁瓣的性能,它由天线阵元、射频下变频模块、AD采样、中频接收系统及上位机控制器组成。对中频接收系统进行数字波束形成的具体方案进行讨论,对多路接收和AD量化一致性造成的各通道间失配提出了幅相校正的解决方案,详细分析了研制中的关键技术。实验结果表明所设计的DBF多波束中频接收系统可有效实现通道间失配的校正,并实现精确的波束赋形功能。 相似文献
106.
提出并优化了用于二维介质柱光子晶体波导与单模平面介质波导对接的基于分布布拉格反射波导的喇叭波导接头,提高了这两种波导之间的传输效率.二维时域有限差分仿真结果表明,在大部分光子晶体波导导模的频谱范围内,传输效率高于98%.传输效率最高可以达到99.85%.
关键词:
光子晶体波导
平面介质波导
时域有限差分 相似文献
107.
A novel silicon controlled rectifier(SCR) with high holding voltage(Vh) for electrostatic discharge(ESD) protection is proposed and investigated in this paper. The proposed SCR obtains high Vhby adding a long N+ layer(LN+) and a long P+ layer(LP+), which divide the conventional low voltage trigger silicon controlled rectifier(LVTSCR) into two SCRs(SCR1: P+/Nwell/Pwell/N+ and SCR2: P+/LN+/LP+/N+) with a shared emitter. Under the low ESD current(IESD), the two SCRs are turned on at the same time to induce the first snapback with high V_h(V_(h1)). As the IESDincreases, the SCR2 will be turned off because of its low current gain. Therefore, the IESDwill flow through the longer SCR1 path, bypassing SCR2, which induces the second snapback with high V_h(V_(h2)). The anti-latch-up ability of the proposed SCR for ESD protection is proved by a dynamic TLP-like(Transmission Line Pulse-like) simulation. An optimized V_(h2) of 7.4 V with a maximum failure current(I_(t2)) of 14.7 m A/μm is obtained by the simulation. 相似文献
108.
Significant improvement of OLED efficiency and stability by doping both HTL and ETL with different dopant in heterojunction of polymer/small-molecules 下载免费PDF全文
This paper reports that the polymer/organic heterojunction doped
light-emitting diodes using a novel poly-TPD as hole transport
material and doping both hole transport layer and emitter layer with
the highly fluorescent rubrene and DCJTB has been successfully
fabricated. The basic structure of the heterostructure is
PTPD/Alq3. When hole transport layer and electron transport layer
are doped simultaneously with different dopant, the
electroluminescence quantum efficiencies are about 3 times greater
than that of the undoped device. Compared with undoped device and
conventional TPD/Alq3 diode, the stability of the doping device is
significantly improved. The process of emission for doped device may
include carrier trapping as well as F\"{o}rster energy transfer. 相似文献
109.
110.
基于修正的应变梯度理论和精化的高阶剪切变形理论,提出了一种含尺度效应的功能梯度三明治微梁模型。功能梯度材料的等效弹性参数由Mori-Tanaka均匀化方法描述。针对微梁的高阶边值问题,融合微分求积和Gauss-Lobatto求积准则,建立了一种2节点18自由度的微分求积有限元。通过对比性研究,验证了理论及数值模型的有效性。最后,讨论了边界条件、材料尺度参数、功能梯度指数、长细比、各层厚度比等对功能梯度三明治微梁静动态特性的影响。结果表明,功能梯度三明治微梁的静力响应、振动频率、屈曲荷载以及模态均呈现出显著的尺度效应,所得结果有望为微机电系统中承载器件的设计提供数据积累和方法依据。 相似文献