Fe/Co双金属催化剂催化叔胺酰胺化

叔胺的酰胺化反应，特别是带有苄基的叔胺的酰胺化，一直是有机合成中的难题。采用介孔二氧化硅掺杂金属的方法制备的一种双金属高活性纳米催化剂Fe-Co@SHSss,在叔丁基过氧化氢(TBHP)的氧化作用下对模拟底物N,N-二甲基苄胺的酰胺化显示出良好的催化效果，得到的反应产物N,N-二甲基苯甲酰胺的产率可以达到80%左右，产物结构经过¹H NMR,¹³C NMR和MS(ESI)表征。使用叔丁基过氧化氢构建的清洁的反应体系，比较符合绿色化学的原则，这对于叔胺的氧化具有十分重要的意义。     

High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure

A high-performance terahertz Schottky barrier diode (SBD) with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper. Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer, by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified. The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area. Compared with the normal structure, the grading coefficient M increases from 0.47 to 0.52, and the capacitance modulation ratio (C_max/C_min) increases from 6.70 to 7.61. The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge. A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35% compared to that 30% of a normal SBD.