Frequency Stability Improvement of a Two-Mode Stabilized 633-nm He-Ne Laser

The red side (lower-frequency) mode of a two-mode stabilized 633-nm He-Ne laser has been locked to the hyperfine structure of the P() line of (127)I(2) by means of frequency modulation spectroscopy enhanced by an external optical cavity. Both the red side and blue side (higher-frequency) modes of the laser exhibit a frequency stability of 2.3 x 10(-11) tau(-1/2). In addition, the frequency fluctuations of the blue side mode are detected by a Fabry-Perot cavity and compensated through an acousto-optic frequency shifter. The short-term stability of better than 3 x 10(-11) is attained for integration times of between 2 x 10(-3) and 2 x 10(-1) s.     

Effects of plastic strain amplitudes on non-proportional cyclic plasticity

Summary A series of plastic strain controlled cyclic tests was performed to facilitate the modelling of cyclic plasticity under general multiaxial loading conditions. The tests were carried out by applying combined axial force and torque to thin-walled tubular specimens of type 316 stainless steel at room temperature. Torsional and circular cycles of the equivalent plastic strain amplitude (von Mises type) ofe ^p /2=0.1, 0.2 and 0.4% were specified.The results showed that the cyclic hardening under the circular cycles is 1.5–1.8 times as large as that under the torsional cycles of the same value ofe ^p /2 in the saturated state. It was also observed that, in the case of torsional cycles, these saturated values are not affected by the sequence of plastic strain cycles in the past, while in the case of circular cycles, they are affected by the cycles of larger amplitudes. Furthermore, it was elucidated that this memory effect depends only on the cycles of the largest amplitude in the past.With 12 Figures     

Identification of chemical oviposition stimulants from rice grain forSitophilus zeamais motschulsky (Coleoptera,Curculionidae)

Chemical components stimulating oviposition bySitophilus zeamais in rice grain were isolated from rice bran and were found to be a mixture of ferulates, diglycerides, and free sterols. Oviposition preference of the species can be induced by synergistic action of these compounds.     

Preparation of ferroelectric Ba(Ti/sub 0.85/Sn/sub 0.15/)O/sub 3/ thin films by metal-organic decomposition

Ferroelectric Ba(Ti/sub 0.85/Sn/sub 0.15/)O/sub 3/ (BTS/sub 15/) thin film is newly prepared on the Pt/Ti/SiO/sub 2//Si substrate by metal-organic decomposition. The firing condition is determined by thermogravimetric and differential thermal analysis. The BTS/sub 15/ thin film with a flat surface and uniform thickness is obtained by spin coating in N/sub 2/ atmosphere that avoids moisture. The BTS/sub 15/ film has a perovskite phase and a preferential [110] texture. It is also found that the crystalline structure is cubic at 24/spl deg/C with a lattice constant of 4.01 /spl Aring/, and a grain size of about 30 nm was estimated by Scherrer equation and SEM image. From P-E hysteresis loop at 20/spl deg/C, the polarization at E=0 and the electric field at P=0 are found to be 1.07 /spl mu/C/cm/sup 2/ and 24.0 kV/cm, respectively. It is observed that the dielectric constant decreases monotonously from about 830 to 630 with increasing temperature ranging from 20/spl deg/C to 50/spl deg/C. Finally, it is found that the BTS/sub 15/ thin film shows a sufficient ferroelectricity and is an attractive material for functional ferroelectric devices, such as thermal-type infrared sensors.     

Effect of gravity on InGaSb crystal growth

The effect of gravity on dissolution of GaSb in InSb melt and growth of InGaSb was experimentally investigated. Experiments were carried out in a GaSb(seed)/InSb/GaSb(feed) sandwich system under an imposed temperature gradient. In the experiments, the GaSb feed crystal dissolved into the InSb melt to supply the required GaSb component for the growth of In_0.1Ga_0.9Sb crystal. Two parameters were considered: (1) the inclination angle (θ) of the sample for gravity as 0° and 53°, and (2) the sample diameter (D) as 9 mm and 5mm. When θ was 0°, the interface was almost flat, indicating that convection was axisymmetric and stable. Whereas the interface was distorted towards gravitational direction when θ was 53°, indicating that solutal convection was dominant. The decrease of growth temperature and sample diameter reduced the distortion of interface and the dissolution amount of GaSb feed. The homogeneous crystals were grown at the initial growth stage by supplying the GaSb component during growth.     

MEMS optical scanners for microscopes

Microelectromechanical systems (MEMS) optical scanners have been around for more than two decades. Various applications have been presented, but few of them have advanced to the commercial level to date due to the difficulties of combination of optics and MEMS devices. This paper presents our activities of investigating MEMS scanner applications related to microscopic imaging. First, we started with developing a millimeter-sized one-dimensional scanner for commercially available laser scanning microscope. This microscope with the MEMS scanner is now commercially available. In order to take advantage of the miniaturization capability of MEMS, the next step was to miniaturize the whole optics together with the scanners. Miniaturized confocal microscope with a two-dimensional (2-D) scanner has been developed, and its feasibility and key issues are clarified. Additionally, an alternative 2-D scanner capable of scanning wide angle has been prototyped and fundamental characterization showed a promising result. Throughout the study, feasibility of MEMS optical scanners for microscopes has been demonstrated.     

Chemical vapor deposition of SiO2 films by TEOS/O2 supermagnetron plasma

A TEOS/O₂ supermagnetron double electrode plasma system was used to deposit SiO₂ films. Deposition rates were measured as a function of rf power and substrate stage temperature. With an increase of rf power on both electrodes from 40 to 80W, the deposition rate increased; however, with a further increase of rf power from 80 to 120W, the deposition rate ceased to increase or decreased only a small amount. The presence of O-H bonds from bonded water in the film was evaluated using buffered HF (BHF) etching solution. With an increase of rf power from 40 to 120W, the BHF etch rate decreased; i.e., the number of O-H bonds were reduced. A minimum BHF etch rate was observed at a rf phase difference of 180° between the two rf power sources. A SiO₂ film was deposited on a trench-patterned quartz substrate. A flat surface SiO₂ layer with air gaps (voids) was formed on the high-aspect ratio (depth/width=1.5-2) trench area.     

HSPF Simulation of Runoff and Sediment Loads in the Upper Changjiang River Basin, China

To evaluate the performance of a computer model simulating runoff and sediment load in the upper region of the Changjiang (Yangtze River) basin over a relatively short time interval, including examining the applicability of the input precipitation data generated from global circulation models and satellite data, we used a spatially distributed model, HSPF with the International Satellite Land Surface Climatology Project (ISLSCP) precipitation data for 1987 and 1988 as input data. The Nash–Sutcliffe coefficient (R2) for 5-day average streamflow was 0.94 in the calibration period and 0.95 in the verification period for the whole upper region. Moreover, the model simulated the 5-day average streamflow well in each main tributary, as shown by R2 values of 0.46–0.96, except that it underestimated the peak flow rates during the flood season over 2 years by up to 71% in Tuojiang and 61% in Jialingjiang. The model simulated the 5-day concentrations of suspended solids (SS) fairly well in the headwaters and upper regions of the Jinshajiang, Yalongjiang, and Minjiang watersheds, as shown by R2 values of 0.31–0.65. In the other regions, however, the model underestimated the SS load by up to 72%, and rarely simulated the fluctuation of SS concentration in each river channel during the flood season. These errors led to the underestimation of sediment runoff volume from the whole upper region during the flood season, as shown by the ratio of the simulated sediment load to the observed data at Yichang: 0.69 in the calibration period and 0.68 in the verification period. The ISLSCP precipitation tended to be more frequent and less intense than the measured precipitation. This was probably the main reason why the HSPF did not perform well in all regions at all times.     

Identification of charge‐transfer transition between Gd3+ to O2− in gadolinium‐containing oxide phosphors in VUV region

Abstract— The broad bands at around 155 nm for GdAl₃(BO₃)₄:Eu, at 184 nm for Ca₄GdO(BO₃)₃:Eu, at 183 nm for Gd₂SiO₅:Eu, and at 170 nm for GdAlO₃:Eu were observed. These bands were assigned to the charge‐transfer (CT) transition of Gd³⁺‐O^2?. In the excitation spectrum of (Gd,Y)BO₃:Eu, a broadened excitation band was observed in VUV region. It could be considered that this band was composed of two bands at about 160 and 166 nm. The preceding band was assigned to the BO₃ group absorption. The later one at about 166 nm could be assigned to the CT transition of Gd³⁺‐O^2?, according to the result of GdAl₃(BO₃)₄:Eu, Ca₄GdO(BO₃)₃:Eu, Gd₂SiO₅:Eu, and GdAlO₃:Eu. The excitation spectra overlapped between the CT transition of Gd³⁺‐O^2? and BO₃ groups absorption. It caused the emission of Eu³⁺ to take place effectively in the trivalent europium‐doped (Gd,Y)BO₃ host lattice under 147‐nm excitation.