Ultrastructural investigation of intact orbital implant surfaces using atomic force microscopy

This study examined the surface nanostructures of three orbital implants: nonporous poly(methyl methacrylate) (PMMA), porous aluminum oxide and porous polyethylene. The morphological characteristics of the orbital implants surfaces were observed by atomic force microscopy (AFM). The AFM topography, phase shift and deflection images of the intact implant samples were obtained. The surface of the nonporous PMMA implant showed severe scratches and debris. The surface of the aluminum oxide implant showed a porous structure with varying densities and sizes. The PMMA implant showed nodule nanostructures, 215.56 ± 52.34 nm in size, and the aluminum oxide implant showed crystal structures, 730.22 ± 341.02 nm in size. The nonporous PMMA implant showed the lowest roughness compared with other implant biomaterials, followed by the porous aluminum oxide implant. The porous polyethylene implant showed the highest roughness and severe surface irregularities. Overall, the surface roughness of orbital implants might be associated with the rate of complications and cell adhesion. SCANNING 33: 211–221, 2011. © 2011 Wiley Periodicals, Inc.     

Optimal scheduling of a communication channel for the centralized control of a platoon of vehicles

This paper proposes an off-line optimal channel scheduling algorithm for an interconnected vehicle control system. The optimal sequence obtained through the scheduling algorithm provides a switching controller with the best switching order if the controller can access only one plant at each time slot over the shared communication medium. Interconnected systems require the string stability as well as the dynamic stability of each unit. This paper shows that integrating the simple string stable control law with the approximately optimal linear-quadratic (LQ) tracker gives the optimal channel scheduling algorithm.     

Replication of nanostructures on microstructures by intermediate film mold inserted hot embossing process

The present study proposes a simple method to replicate nano/micro combined multiscale structures using an intermediate film mold and anodic aluminum oxide (AAO) nanomold in hot embossing process. The proposed method is simply to add an intermediate film mold with microscale thru-hole patterns to the ordinary mold system, on which nanostructures are patterned, in the hot embossing process. The intermediate film mold is inserted between polymer substrate and AAO nanomold. During the hot embossing process, the polymer first fills microscale thru-hole patterns in the intermediate film mold and subsequently fills nanopores in AAO nanomold, resulting in the nano/micro combined structures. The intermediate film molds, which have microscale thru-hole patterns were fabricated by micro-milling, laser ablation, etching methods and/or LIGA process. The nano/micro combined structures were successfully replicated by the proposed method.     

Collapse-free thermal bonding technique for large area microchambers in plastic lab-on-a-chip applications

Bonding is an essential step to form microchannels or microchambers in lab-on-a-chip applications. In this paper, we present a novel plastic thermal bonding technique to seal and form large area microchambers (planar characteristic width and length on the order of 1 mm and characteristic thickness on the order of 10–100 μm) without collapse by introducing a holed pressure equalizing plate (HPEP) that includes holes of the same size and shape as the microchambers. To demonstrate the proposed technique, two types of large area microchambers [(1) 20 × 10 mm and 40 μm thick and (2) 12 × 2.5 mm and 120 μm thick] with microchannels were designed and replicated on plastic substrates by means of hot embossing and injection molding processes with prepared two nickel mold inserts. The replicated large area microchambers as well as the microchannels in the plastic lab-on-a-chip were successfully sealed (i.e., no leakage) and formed without any collapse by the proposed thermal bonding technique with the help of the HPEP.     

A study of roll‐printing technology for TFT‐LCD fabrication

Abstract— Recently, potential breakthrough technologies for low‐cost processing of TFT‐LCDs and new process developments for flexible‐display fabrication have been widely studied. A roll‐printing process using etch‐resist material as a replacement for photolithographic patterning was investigated. The characterization of the properties of patterns formed in roll printing, a method to fabricate cliché plates for fine patterns, and the design of a new formulation for resist printing ink is reported. The pattern position accuracy, which is one of the most important issues for the successful application of printing processes in display manufacturing was studied and how it can be improved by optimizing the blanket roll structure is explained. New design rules for the layout of the thin‐film‐transistor array was derived to improve the compatibility of roll printing. As a result, a prototype 15‐in.‐XGA TFT‐LCD panel was fabricated by using printing processes to replace all the photolithographic patterning steps conventionally used.     

Ambient‐light sensor system with wide dynamic range enhanced by adaptive sensitivity control

Abstract— A new digital ambient‐light sensor system is presented which employs two linear light sensors with different sensitivities and automatically adjusts the sensitivity based on the illumination condition. The adaptation mechanism allows a very wide range of light intensity to be detected, and the input dynamic range of the system is substantially improved from 22.5 to 45.1 dB. The proposed method does not require any additional precision bits for output data. Due to the small number of the output bits and the simple conversion process, the system can be easily integrated on the display panel.     

12.1‐in. WXGA AMOLED display driven by InGaZnO thin‐film transistors

Abstract— A full‐color 12.1‐in.WXGA active‐matrix organic‐light‐emitting‐diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n‐channel a‐IGZO TFTs exhibited a field‐effect mobility of 17 cm²/V‐sec, threshold voltage of 1.1 V, on/off ratio >10⁹, and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a‐IGZO TFT array is promising for large‐sized applications such as notebook PCs and HDTVs because the a‐IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system.     

Gait planning for quadruped robot based on dynamic stability: landing accordance ratio

In this article, the method for increasing dynamic stability of quadruped robot is proposed. Previous researches on dynamic walking of quadruped robots have used only walking pattern called central pattern generator (CPG). In this research, different from walking generation with only CPG, a instinctive stability measure called landing accordance ratio, is proposed and used for increasing dynamic stability. In addition, dynamic balance control and control to adjust walking trajectory for increasing dynamic stability measure is also proposed. Proposed methods are verified with dynamic simulation and a large number of experiments with quadruped robot platform.     

Electron beam lithography-assisted fabrication of Au nano-dot array as a substrate of a correlated AFM and confocal Raman spectroscopy

This paper documents a study of an Au nano-dot array that was fabricated by electron beam lithography on a glass wafer. The patterns that had features of 100nm dots in diameter with a 2-mum pitch comprised a total area of 200x200mum(2). The dot-shaped Cr underlayer was open to the air after developing Poly(methyl methacrylate) (PMMA). When dipped into the Cr etchant, the exposed Cr layer was eliminated from the glass wafer in a short period of time. In order to ultimately fabricate the Ti/Au dot arrays, Ti and Au were deposited onto the arrays with a thickness of 2 and 40nm, respectively. The lift-off procedure was carried out in the Cr etchant using sonication in order to completely remove the residual Cr/PMMA layer. The fabricated Au nano-dot array was then immersed in an Ag enhancing solution and then into an ethanol solution containing (N-(6-(Biotinamido)hexyl)-3'-(2'-pyridyldithio)-propionamide (Biotin-HPDP). The substrate was analyzed using a correlated atomic force microscopy (AFM) and confocal Raman spectroscopy. Through this procedure, position-dependent surface-enhanced Raman spectroscopy (SERS) signals could be obtained.     

Effect of deposition temperature on dielectric properties of PECVD Ta2O5 thin film

Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl₅ as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta₂O₅ film were investigated for Al/Ta₂O₅/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta₂O₅ deposited by PECVD was amorphous as-deposited. However, crystalline -Ta₂O₅ of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta₂O₅ were found to be 2.54 fF m^–2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods.