气压对VHF-PECVD制备的μc-Si:H 薄膜特性影响的研究

本文主要研究了用VHF-PECVD方法制备的不同工作气压的微晶硅薄膜样品.结果表明:沉积速率随反应气压的增大而逐渐增大;光敏性(光电导/暗电导)和激活能测试结果给出了相同的变化规律;傅立叶红外测试、X射线衍射和室温微区喇曼谱的结果都表明了样品的晶化特性;通过工艺的具体优化得出了器件级的微晶硅材料.     

电阻蒸发铝薄膜结构及其对非晶硅太阳电池性能的影响

本文首先采用电阻蒸发法制备了不同厚度的Al薄膜,并选择了两个典型厚度的Al薄膜制备工艺来制备非晶硅太阳电池的Al背电极,研究了Al背电极厚度对电池性能的影响.结果表明,Al背电极的厚度由800nm减薄到70nm时,电池的Voc平均值由0.826V增加到0.829V,电池的Jsc平均值由11.747mA/cm2减小到11.318 mA/cm2,电池的FF平均值由0.701增加到0.728,而电池效率的平均值略有增加,由6.803;增加到6.833;.用扫描电镜(SEM)和X射线衍射(XRD)研究了玻璃衬底上蒸发的Al薄膜和非晶硅电池Al背电极表面形貌和微观结构的变化,分析了电池性能随Al背电极厚度变化的原因.     

Influence of the deposition parameters on the transition region of hydrogenated silicon films growth

Hydrogenated microcrystalline and amorphous silicon thin films were prepared by very high frequency plasmaenhanced chemical vapour deposition （VHF PECVD） by using a mixture of silane and hydrogen as source gas. The influence of deposition parameters on the transition region of hydrogenated silicon films growth was investigated by varying the silane concentration （SC）, plasma power （Pw）, working pressure （P）, and substrate temperature （Ts）. Results suggest that SC and Ts are the most critical factors that affect the film structure transition from microcrystalline to amorphous phase. A narrow region in the range of SC and Ts, in which the rapid phase transition takes place, was identified. It was found that at lower P or higher Pw, the transition region is shifted to larger SC. In addition, the dark conductivity and photoconductivity decrease with SC and show sharp changes in the transition region. It proposed that the transition process and the transition region are determined by the competition between the etching effect of atomic hydrogen and the growth of amorphous phase.     

用于HIT太阳能电池的非晶硅薄膜制备与性能研究

采用射频等离子体增强化学气相沉积技术(RF-PECVD),在不同硅烷浓度下制备本征非晶硅薄膜,研究薄膜材料的微结构和光电性能.研究表明,在硅烷浓度为5;时,制备的薄膜材料处于非晶/微晶相过渡区域,具有宽光学带隙、低吸收系数、较高电导率和较好的致密性.作为钝化层应用到HIT太阳电池中,具有良好的钝化效果,在n型单晶硅衬底上制备出了效率为13.92;的太阳电池.     

掺杂量对ZnO陶瓷靶材性能影响的研究

以ZnO、Al2O3粉体为原料,采用常压烧结方法制备高导电性ZnO: Al陶瓷靶材,并系统研究了Al掺杂量对该靶材的晶体结构、微观形貌以及电学特性的影响.结果表明:Al2O3掺杂量是影响ZnO陶瓷靶材导电性的重要因素之一.随Al: Zn原子比从0: 100变化至8.0: 100,电阻率呈现先递减后递增的规律.当Al: Zn原子比为4.0: 100时,所制备的ZnO陶瓷靶材电阻率最低,为4.1×10-3 Ω·cm;当Al掺杂量超过某一数值后,将导致锌铝尖晶石相(ZnAl2O4)的生成,从而使材料的电阻率升高.为了获得高导电性能的ZnO靶材,必须精确控制Al的掺入量,以防止锌铝尖晶石的生成.     

Effect of substrate temperature and pressure on properties of microcrystalline silicon films

In this paper intrinsic microcrystalline silicon films have been prepared by very high frequency plasma enhanced chemical vapour deposition (VHF-PECVD) with different substrate temperature and pressure. The film properties were investigated by using Raman spectra, x-ray diffraction, scanning electron microscope (SEM), and optical transmittance measurements, as well as dark conductivity. Raman results indicate that increase of substrate temperature improves the microcrystallinity of the film. The crystallinity is improved when the pressure increases from 50Pa to 80Pa and the structure transits from microcrystalline to amorphous silicon for pressure higher than 80Pa. SEM reveals the effect of substrate temperature and pressure on surface morphology.     

绒面结构ZnO薄膜及其表面处理

本文制备出(110)峰取向的绒面结构MOCVD-ZnO:B薄膜并提出CH3COOH湿法刻蚀的表面处理技术.研究表明,绒面结构ZnO:B薄膜具有"类金字塔"晶粒形状;处理前后ZnO:B薄膜的微观结构,方块电阻和光学性能变化不大.适当的表面处理有助于使薄膜表面趋于柔和,有望改善ZnO/Si界面特性,从而应用于μc-Si薄膜太阳电池.     

ITO薄膜的厚度对其光电性能的影响

氧化铟锡(indium-tin oxide, ITO)具有在可见光范围内高度透明的特性和优良的电学特性,通常当作透明电极,被广泛应用于太阳电池和发光元器件上.本研究中用电阻加热反应蒸发的方法制备ITO薄膜,测试了膜的厚度、电阻率、可见光透过率、载流子浓度和迁移率,讨论薄膜的厚度对薄膜光电性能的影响.实验中制备的ITO薄膜,透过率良好,电阻率可达6.37×10-4Ω·cm,载流子浓度和迁移率可分别达到1.91×1020cm-3和66.4cm2v-1s-1.将实验中制备的ITO作为nip太阳能电池透明电极,其短路电流为10.13mA/cm2,开路电压为0.79V,填充因子为0.648,效率可达到5.193;.     

高压射频等离子体增强化学气相沉积制备高效率硅薄膜电池的若干关键问题研究

报道了采用高压射频等离子体增强化学气相沉积(RF-PECVD) 制备高效率单结微晶硅电池和非晶硅/微晶硅叠层电池时几个关键问题的研究结果, 主要包括: 1)器件质量级本征微晶硅材料工艺窗口的确定及其结构和光电性能表征; 2)孵化层的形成机理以及减小孵化层的有效方法; 3)氢稀释调制技术对本征层晶化率分布及其对提高电池性能的作用; 4)高电导、高晶化率的微晶硅p型窗口层材料的获得, 及其对减小微晶硅电池p/i界面孵化层厚度和提高电池性能的作用等. 在解决上述问题的基础上, 采用高压RF-PECVD制备的单结微晶硅电池效率达8.16%, 非晶硅/微晶硅叠层电池效率11.61%.