YAG∶Ce3+在激光照明应用中的研究进展

基于激光二极管(Laser diode,LD)的照明和显示技术代表了半导体行业未来的重要发展方向之一,荧光转换材料是决定激光照明的能量效率和显示产品色彩品质的核心部件。黄色荧光转换材料Y₃Al₅O₁₂∶Ce³⁺(YAG∶Ce³⁺)适合蓝光LD激发、效率高、易于获得白光,仍然是目前最为广泛的研究对象。传统荧光粉加有机硅胶的封装模式热导率低,LD激发下存在烧蚀、发黑、失效等问题。LD高功率激发密度的特点引发了荧光材料封装技术革命性变革。为此,多形态、高热导率的远程荧光体应运而生。本综述主要对基于YAG∶Ce³⁺荧光玻璃、荧光薄膜、荧光晶体、荧光陶瓷等不同形态材料的制备方法及其在LD照明应用中的性能研究进行了总结,对荧光转换材料和LD照明的发展进行了展望。     

Fluorescence properties of divalent and trivalent europium ions in CdWO4 single crystals grown by the Bridgman method

Optical absorption,excitation,and fluorescence were investigated in Eu ion-doped CdWO4 single crystal grown by a modified Bridgman method.The results indicate that Eu2+ and Eu3+ ions coexist in CdWO4 crystal and an energy transfer occurs between these Eu2+ and Eu3+ ions.When the crystal is excited by 266-nm light,the energy corresponding to the 4f65d to 8S7/2 transition of Eu2+ ions results in the excitation of the Eu3+ ions to the 5DJ level.The effect on fluorescence of annealing in oxygen at various temperatures was investigated.The excitation intensity of Eu2+ ions at 266 nm decreases as annealing temperature increases from 300 K to 1073 K,but it remains at a certain equilibrium level when the annealing temperature is further increased.     

Tm~(3+) and Nd~(3+) singly doped LiYF_4 single crystals with 3-5 μm mid-infrared luminescence

Mid-infrared(MIR) emissions of 2.4 and 3.5 μm from Tm3+:LiYF4 single crystals attributed to3H4 →3H5 and3H5 →3F4 transitions as well as MIR emissions of 4.2,4.3,and 4.5 μm from Nd3+:LiYF4 lasers attributed to4I15/2 →4I13/2,4I13/2 →4I11/2,and4I11/2 →4I9/2 transitions,respectively,are observed.LiYF4 single crystals possess high transmittance of over 85% in the 2.5-6 μm range.The large emission crosssections of Tm-doped crystals at 2.4 μm(1.9×10-20cm2) and Nd-doped crystals at 4.2 μm(0.84×10-20 cm2) as well as the high rare-earth doping concentrations,excellent optical transmission,and chemicalphysical properties of the resultant samples indicate that Nd3+and Tm3+singly doped crystals may be promising materials for application in MIR lasers.