小波包在硬目标侵彻仿真结果分析中的应用

硬目标侵彻仿真得到的速度、加速度信号频率成分非常丰富，而且是非平稳的随机过程，小波分析具有良好的时频局部化性质，可用来分析这些信号，在总结小波，小波包理论的基础上，利用小波包将仿真得到的加速度信号分解到相邻的不同频率段上，然后用信号重构方法对各个频率段上的信号进行重构，并作了相应的频谱分析，最后对小波包分析的工程意义进行了探讨。     

半导体锗纳米团簇和纳米层的生成与结构研究

我们在硅锗合金衬底上采用氧化等制膜方式生成零维和二维的纳米结构样品，用高精度椭偏仪(HPE)、卢瑟福背散射谱仪(RBS)和高分辨率扫描透射电子显微镜(HR-STEM)测量样品的纳米结构，并采用美国威思康新州立大学开发的Rump模拟软件对卢瑟福背散射谱(RBS)中的CHANNEL谱和RANDoM谱分别进行精细结构模拟，测量并计算出纳米氧化层与锗的纳米薄膜结构分布，并且反馈控制加工过程，优化硅锗半导体材料纳米结构样品的加工条件。我们测量出样品横断面锗纳米团簇和纳米层的PL发光谱。我们在硅锗合金的氧化层表面中首次发现纳米锗量子点组成的几个纳米厚的盖帽膜结构，我们首次提出的生成硅锗纳米结构的优化加工条件的氧化时间和氧化温度匹配公式的理论模型与实验结果拟合得很好。     

ZrO2/SiO2双层膜膜间渗透行为初步研究

用溶胶-凝胶技术,采用提拉镀膜法在K9玻璃基片上镀制了ZrO2/SiO2双层膜和SiO2/ZrO2双层膜,研究了这两种膜层之间的渗透问题。用X射线光电子能谱仪(XPS)测量了薄膜的成分随深度方向的变化,用反射式椭偏仪对X射线光电子能谱仪测得的实验结果进行模拟与验证。结果表明,用X射线光电子能谱仪测得的实验结果建立的椭偏模型,模拟出来的椭偏曲线和用椭偏仪测量出来的椭偏曲线十分吻合;对于ZrO2/SiO2双层薄膜,膜层间的渗透情况不是很严重,在薄膜界面处薄膜的成分比变化非常明显,到达一定深度后薄膜的成分不再随深度的变化而变化;SiO2/ZrO2双层膜膜层界面间的渗透十分严重,渗透层的深度比较大,底层几乎发生了完全渗透。     

徐州市水资源管理及水污染防治对策

根据徐州市目前水资源及水污染状况，分析了水污染治理存在的自然条件脆弱、管理体制不顺、资金缺乏等三个主要原因，提出水资源管理及水污染防治对策主要是强化水资源管理，积极推进水务一体化进程，开发利用中水，实现污水资源化，建设节水防污型社会等。     

Tertiary amine appended derivatives of N-(3,5-dinitrobenzoyl)leucine as chiral selectors for enantiomer assays by electrospray ionization mass spectrometry

Derivatives of the chiral selector N-(3,5-dinitrobenzoyl)leucine were prepared and used as chiral selectors for enantiomer discrimination in single-stage electrospray ionization mass spectrometric experiments. The chiral selectors were designed to remove the ionization site from the sites required for effective chiral recognition. Addition of a chiral analyte to a solution of the two pseudoenantiomeric chiral selectors, which differ in absolute stereochemistry and the length of the tether connecting the tertiary amine site used for ionization via protonation and the rest of the chiral selector, affords selector-analyte complexes in the electrospray ionization mass spectrum where the ratio of these complexes is dependent on the enantiomeric composition of the analyte. The relationship between the ratio of the selector-analyte complexes in the electrospray ionization mass spectrum and the enantiomeric composition of the analyte can be used to relate the extent of enantioselectivity that is being observed and for quantitative enantiomeric composition determinations. Investigations into the scope and limitations of this method, plus a comparison to the enantioselectivities observed by chiral HPLC using a N-(3,5-dinitrobenzoyl)leucine-derived chiral stationary phase, is presented.     

激光星间链路中天线扫描捕获技术实验室模拟研究

对激光星间链路中的天线扫描捕获技术进行了理论分析和模拟实验研究。首先建立了天线扫描捕获理论模型 ,在此基础上对影响系统捕获性能的各主要参量之间关系进行了数值仿真分析。设计实现了一套天线扫描捕获实验室模拟系统 ,通过模拟实验对部分数值分析结果进行了验证 ,实验结果与数值分析结果基本符合。     

基于偏振光干涉仪的Interleaver解复用器实验研究

为实现更窄信道间隔的密集波分复用 ,提出了一种基于偏振光干涉仪的新型Interleaver解复用器 ,分析了结构组成与基本工作原理 ,对其进行了初步的测试实验 ,该器件所分开的DWDM系统两组波长功率均衡 ,隔离度分别为 1 0 6dB和 1 4 6 4dB ,- 1dB带宽分别为 0 7nm和 0 4nm。     

润滑油基础油新系列标准的制订及产品研制

为适应高质量润滑油产品生产的需要，制订了润滑油基础油新系列标准。新系列标准依原油性质和基础油粘度指数分为５类。根据新标准的要求，研究了降低润滑油基础油蒸发损失，提高其氧化安定性的措施，开发了一些如临氢吸附精制工艺和溶剂脱蜡一催化降凝组合工艺等新的基础油生产技术。     

Influence of growth parameters on the microstructures of erbium films deposited on Si(111) substrates

Erbium films were grown on single crystal Si(111) substrates by electron beam vapor deposition. The microstructures of the erbium films were systematically investigated by X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy. Results indicate that the surface morphologies and microstructures of the erbium films with Si as substrates are susceptible to the substrate temperatures when the deposition rates are fixed. The pure erbium films with columnar grains were obtained at temperatures below 200 °C, but in the films grown at temperatures higher than 350 °C, some pinholes that are composed of erbium silicides were found. The pinholes have triangular shapes which is in accordance with the geometry of the underlying Si(111) substrate. The films grown at a substrate temperature equal or greater than 450 °C have cracks which would be formed due to the different shrinkage degree of erbium and silicon when the substrate temperature was cooled down to room temperature. The films grown at 200 °C show the (002) preferred orientation, which is consistent to the prediction by the theory of surface energy minimization. The deposition rate and deposition time are considered as factors to affect the reaction of the erbium film and the silicon substrate.