Deep grinding of incomplete-cycle surfaces, with periodic straightening of the wheel

The formation of the force components in opposed and unidirectional deep grinding is considered, taking account of wear of the wheel. The influence of the direction of table supply on the grinding force and stability of the tool edges is shown. In considering the results, the impact at initial contact of the abrasive grains with the blank is taken into account.     

Role of the pinch effect in a high-velocity metallic contact with a high current

Experimental evidence is presented in support of the hypothesis that the main factor determining the flow of physical processes on the interface of a sliding solid-state contact carrying a ∼0.1–1 MA/cm² current is the sausage-type MHD pinch instability. It leads to the appearance and explosive destruction of tightening (quasi) liquid constrictions connecting the contact surfaces, so that under magnetic-suspension conditions the sliding of the latter relative to one another is virtually contact-free on the greater portion of their area. Pis’ma Zh. Tekh. Fiz. 25, 89–94 (March 26, 1999)     

On the possibility of decreasing spherical and chromatic aberrations in flat combined axisymmetric magnetoelectrostatic lenses

It is shown that the coefficients of both spherical and chromatic aberrations in flat combined axisymmetric magnetoelectrostatic lenses can be decreased by a factor of six as compared to the analogous coefficients for pure magnetic lenses, provided appropriate values are selected for the ratio of dimensions of the electrodes and pole tips of the combined lens, electric potentials on the electrodes, and ampere-turns of the field-exciting coil.     

High-power monolithic passively modelocked quantum-dot laser

High-power operation of monolithic modelocked lasers based on 1.26 /spl mu/m self-organised quantum dots has been achieved in the 30-60/spl deg/C range for the first time. A 60/spl deg/C peak power reaches 1.7 W with a pulse width of 3.2 ps at a repetition frequency of 5 GHz.     

IPL resistless lithography as a method for delta-doping of monocrystalline semiconductors by Al and Sb implantation

The potential is assessed of ion projection lithography (IPL) as a method for Al and Sb implantation delta-doping of silicon single crystals in order to produce prescribed arrangements of quantum dots and wires. Conceptually, the method uses an ion beam to project a stencil mask on a plane beneath the surface of a wafer, thus creating a desired doping profile. It is shown that IPL implanters with immersion electrostatic objectives could provide a lateral resolution of about 35 nm on a subfield area of 0.06 × 0.06 mm². This resolution should allow one to produce 10⁶ qubits on a chip area of 0.35 × 0.35 mm². It also implies a throughput of 60 quantum chips per hour, which appears to be sufficient to produce quantum computers on a commercial basis.Translated from Mikroelektronika, Vol. 34, No. 2, 2005, pp. 110–118.Original Russian Text Copyright © 2005 by Zhukov.     

Optical Joint of Optoelectronic Radiation Converters with Immersion Light Guides and Calculation of Their Characteristics

In the present work, equations are obtained that establish relationships between the optical characteristics of optoelectronic radiation converters and straight cylindrical immersion light guides with straight faces manufactured from isotropic and anisotropic materials with different refractive indices. Engineering procedures to calculate the schemes of optical joint of pyrometric converters with light guides that improve the metrological characteristics of the immersion light-guide thermometry of radiation are developed.     

Electric arc in flow with well-developed turbulence

The results of an investigation of electric-arc discharge in a flow segment with well-developed turbulence in a cylindrical channel are given.Translated from Inzhererno-Fizicheskii Zhurnal, Vol. 50, No. 3, pp. 357–362, March, 1986.