Multi-level simulation of metal-forming processes

The IBF has for some years made use of finite element programmes to solve metal-forming problems. In the course of this investigation, it has become evident that a problem-oriented adaptation of FEM simulation to the problem in hand is beneficial in terms of computation effort. The computation time for the process parameters is optimised in a multi-level simulation. At level 1 (global analysis) integral parameters such as the required force and required work are computed using a coarse FEM mesh. At level 2 (local analysis) an optimised number of elements is used to determine continuum mechanics parameters like stress, strain and temperature. Microscopic phenomena are simulated at level 3 (microscopic analysis), using special micro-material elements and thermodynamic models.     

A typed functional extension of logic programming

A logic language is suitable for specification if it is equipped with features for data abstraction and modularization. In this paper, an effective mechanism to incorporate function and type into logic programming is presented as the means to embed data abstraction mechanism into logic programming. This incorporation is essentially based on Horn clause logic with equality and a polymorphic type system that is an extension of Mycroft and O’Keefe’s system. This paper also presents an implementation based on Warren Abstract Machine (WAM) and shows the performance, along with a comparison with WAM.     

Validation of a specific selection criterion for dental periapical radiography

We report three children with hemidystonia in whom anti-cardiolipin (aCL) antibodies were demonstrated. Systemic lupus erythematosus was excluded on the basis of both clinical and serological criteria, and the diagnosis of primary antiphospholipid syndrome (PAPS) was made. In two cases, aCL antibodies could be causally related to a presumed immune-mediated thrombotic event involving the basal ganglia as shown by magnetic resonance imaging (MRI). In the remaining patient the finding of white matter alteration on NMR might be due to cross-reactivity of anti-phospholipid (aPL) antibodies with cerebral phospholipids, resulting in demyelination. We suggest that PAPS must always be considered when isolated or recurrent focal cerebral ischaemia, and particularly hemidystonia, occur in childhood.     

Determination of assimilable organic carbon (aoc) in ozonated water with acinetobacter calcoaceticus

The effect of ozone application in drinking water on the production of assimilable organic carbon (AOC) was evaluated. The typical procedure to determine AOC is suggested by van der Kooij, which is the method of bacterial growth measurement by colony‐forming units using the strain P17 and/or NOX. The bacterial indicator species used for this study is Acinetobacter calcoaceticus which was isolated and identified while ozonating Nakdong river water. This strain could never be isolated from the raw water, but this strain was the predominant isolate in the ozonated water. Within a short incubation time, this organism was found to replicate well on acetate and oxalate as the sole carbon sources. The yield coefficients of this organism for acetate and oxalate are the same order of magnitude as the value of P17 and NOX. With full‐scale experiments, A. calcoaceticus concentration was found to increase after ozonation, but did not decrease upon chlorination. In laboratory‐scale experiments with Yongsan river water, aldehyes were found to be produced in proportion to the ozone dose. The raw water contains low concentrations of aldehydes, but has a high AOC concentration. A correlation between aldehyde production and AOC production was observed in the tested water with ozonation.     

A comparative evaluation of two sensitive serum neutralization tests for bovine herpesvirus-1 antibodies

The need for frequent injections and monitoring, the possibility of multiple gestations, and the higher cost compared to clomiphene citrate, prevents many clinicians from using human menopausal gonadotrophin (HMG) for ovulation induction. A sequential medication regimen, in which HMG is taken after clomiphene, overcomes these problems. We retrospectively compared per cycle fecundity and birth rates in 119 cycles of clomiphene-HMG, 524 cycles of clomiphene alone, 57 cycles of HMG alone, and 79 cycles of concurrent HMG and clomiphene in patients receiving intra-uterine insemination (IUI), who were free of endometriosis or tubal disease. Per cycle fecundity for clomiphene-HMG was 22% [95% confidence interval (CI) 12-34%], double that of clomiphene alone (11%) (95% CI 8-14%) (P < 0.01), and equal to HMG alone (18%) (95% CI 7-29%) or HMG and clomiphene together (19%) (95% CI 10-28%). The multiple birth rate for clomiphene-HMG (7/21) equalled that for HMG alone (3/12) and HMG and clomiphene together (3/8). The average number of ampoules of HMG required [follicle stimulating hormone (FSH) 75 mIU, luteinizing hormone (LH) 75 mIU] was decreased by 65% from 24.5 +/- 1.0 for HMG or HMG and clomiphene together to 8.6 +/- 0.3 for clomiphene-HMG (P < 0.001). Per cycle fecundity was identical when one, two or three ampoules of HMG per day were administered after clomiphene. We conclude that ovulation induction with sequential clomiphene-HMG results in fecundity double that of clomiphene alone and equal to HMG alone or concurrent with clomiphene, thereby reducing the requirement for HMG.     

Annealing behavior of Ar ion irradiated Bi2Sr2Can-1CunO4+2n superlattice and intergrowth films

Artificially layered Bi₂Sr₂Ca_n–1Cu_nO_4+n films were synthesized by sequential sputter deposition of BiO, SrCu_0.5O_1.5 and CaCuO₂ layers. Annealing behavior of these films which were irradiated by Ar ions was studied. Defect assisted improvement of their crystalline perfection is expected which might results in the improvement of the superconducting properties of these films. An artificial film, such as an intergrowth of 2223 and 2234 phases, and superstructure films of (2245)₁(2201)₁ and (2234)₁(2212)₁, were irradiated by Ar ions (150 keV, 2–10×10¹² ions/cm₂) and annealed at 730 °C. An improvement of superconducting transition temperatures were observed.     

Development of the Base Station Controller and Manager in the CDMA Mobile System

The base station (BS) in the CDMA Mobile System (CMS) connects calls through the radio interface and is designed to provide mobile subscribers with high quality service in spite of mobile subscribers’ motions. The BS consists of multiple base station transceiver subsystems (BTSs), a base station controller (BSC) and a base station manager (BSM). This paper is concerned with the BSC and the BSM. The BSC is located between the BTSs and the mobile switching center (MSC) connected with the public network, and is responsible for controlling mobile calls from and to mobile subscribers via the BTSs. The BSM provides operator-interfaces per the BS and takes responsibility of operation and maintenance (OAM) of the BS. Design of the BSC is based on two module types: functional module and unit module. The functional module is used to support new services easily and the unit module to increase the system capacity economically. Both modular types are easily achieved by inserting the corresponding modules to the system. Particularly, in order to efficiently support the soft handover which is one of CDMA superior advantages, the BSC adopts a large high-speed packet switch connecting up to 512 BTSs, and thus mobile subscribers can be provided with soft handover in high probability. The BSM is based on a commercial workstation to support OAM functions efficiently and guarantee high reliability of the functions. The BSM uses graphical user interface (GUI) for efficient OAM functions of the BS.     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.