A Simulation-Optimization Model for Conjunctive Use of Canal and Pond in Irrigating Paddy Fields

Water Resources Management - In this study, a new methodology is presented for conjunctive use of canal and pond to assess the role of ponds in saving local water and optimizing use of them in...     

Analysis of a three-phase to seven-phase transformer under unbalanced input

Microsystem Technologies - In the recent past, multiphase power generation, power transmission, and multiphase drive system are the main focus of research due to their several advantages over...     

Low-voltage and low-power Ku-band CMOS LNA using capacitive feedback

Analog Integrated Circuits and Signal Processing - An ultra-wideband (12–18 GHz) low-noise amplifier (LNA) using a 65 nm CMOS technology is proposed, in which a...     

Evaluation of Four Tree Algorithms in Predicting and Investigating the Changes in Aquifer Depth

One of the key elements in improved management and better planning for aquifer maintenance is the ability to predict changes in aquifer depth. In order to forecast changes in aquifer depth in Qazvin plain, four methods, including Classification and Regression Tree (CART), Reduced Error Pruning Trees (RepTree), M5-Pruned (M5P), and M5Rule, were used in this work. The absolute mean error (MAE) and coefficient of determination (R2) data show that the CART algorithm performs better than other algorithms at forecasting changes in aquifer depth. The CART algorithm's prediction findings showed that the aquifer's behavior in the two seasons was entirely different. In the first stage, which began in November and continued through April, there was an annual average depth of 0.045 m. The aquifer depth has been greatly influenced by rising precipitation and falling air temperature. The aquifer experiences an average decline of 0.15 m in the second portion, which runs from May to October. Aquifer depth has significantly decreased as a result of declining natural water supplies and rising agricultural water use. It is advised to utilize a crop scheme with reduced water need when rainfall reduces due to the strong effect of changes in aquifer depth from rainfall with a delay of one to three months ago.

     

A Variable Current-Limit Control Scheme for a Bi-directional Converter used in Ultracapacitor Applications

In ultracapacitor applications, generally, a bi-directional converter is connected to a DC bus and is designed to compensate rapid load variations on the bus. During transient phases, overloaded DC bus can push the converter out of its operating limits. For providing the necessary power, converters should be put in parallel, while each converter is limited into its optimal operating range. In a boost converter, this operating limit can be related to the inductor current and UC voltage. In this study, a variable current-limit is proposed for inductor current which then determines the operating range of the boost converter. This method will provide stability of the converter during overload transients. An experimental setup consisting of a bi-directional converter, a controllable load/source, and an ultracapacitor is presented, to validate the proposed method. Several scenarii are applied to analyze the performance of the system in overloaded phases and theoretical and experimental results are presented.     

Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study

In this paper, the effect of channel width variation on performance of double lateral gate junctionless transistors in the depletion and accumulation regimes is investigated. The characteristics of the device with various channel widths is comprehensively examined through analysis of on and off state current, threshold voltage (V _th), transconductance (g _m) and drain conductance (g _D) variation in each operating regime. The carriers’ density distribution, electric field components and mobility are investigated through 3-D numerical simulations of the device to illustrate the variation of output characteristics. The results show that as the width decreases, the off-current (I _OFF) decreases significantly as a result of better electrostatic control of the lateral gates over the channel. The on-current (I _ON) is also decreased mainly due to the doping-dependent mobility degradation.It is also indicated that between the flat-band and fully depleted (pinch off) variation of the majority carriers is the main parameter that modifies the characteristics of the device, while the mobility variation is recognized as the basic factor in the accumulation regime.     

Effect of seed layers on low-temperature,chemical bath deposited ZnO nanorods-based near UV-OLED performance

Low-temperature wet chemical bath deposition (CBD) method is one of the most efficient and least hazardous solution-based techniques which is widely employed to grow ZnO NRs. In CBD method, a seed layer is usually deposited on the substrate. In this paper, high quality ZnO and aluminum doped ZnO (AZO) seed layers are sputtered on the indium tin oxide (ITO) coated glass. In continue, aligned ZnO NRs are grown on the AZO and ZnO seed layers via CBD technique. The effect of the growth time and seed layer on the physical properties of as-grown ZnO NRs are investigated. According to the results, the seed layer plays an essential role on the growth orientation and growth rate of the ZnO NRs. The ZnO NRs grown on AZO seed layer are more aligned rather than ZnO seed layer due to their higher texture coefficients. The relative photoluminescence (PL) intensity ratio of near band emission (NBE) to deep level emission (DLE) (I_NBE/I_DLE) for the ZnO NRs grown on AZO and ZnO seed layers are calculated as 7.45 and 2.62, respectively. To investigate the performance of the as-grown ZnO NRs, near ultraviolet organic light-emitting diodes (UV-OLEDs) using ZnO NRs array as n-type material and poly [2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV) conjugated polymer as p-type material have been fabricated. The total concentration of traps ($N_t$), the characteristic energies ($E_t$) and the turn-on voltages for the devices with the structures of ITO/AZO/ZnO NRs/MEH-PPV/Al (device A) and ITO/ZnO/ZnO NRs/MEH-PPV/Al (device B) are attained 7.65 × 10¹⁶ and 7.75 × 10¹⁶ cm^?3, 0.232 and 0.206 eV, 23 and 21 V, respectively. Moreover, based on the electroluminescence (EL) spectra, the NBE peaks for device A and B are obtained nearly in the wavelengths of 382 and 388 nm, respectively. Finally, various charge carrier transportation processes of prepared UV-OLEDs have been studied, systematically.     

An energy-efficient method for mitigating membrane fouling: A novel embodiment of the inverse fluidized bed

A novel inverse fluidized bed (IFB) was developed to improve membrane fouling mitigation vis-à-vis the conventional aeration method. The fluidized media, whose density was less than water and oleophilic, were more effective than bubbles for both feeds containing oil and particulates due to their greater inertia. The key highlights are (i) for all the conditions investigated, IFB consistently gave a lower trans-membrane pressure (TMP) than aeration at the same energy requirement; (ii) IFB performed better even when the energy input was reduced by 87.5%; (iii) IFB provided an impressive enhancement of up to 54 times that of dead-end filtration.     

All-optical 6- and 8-channel demultiplexers based on photonic crystal multilayer ring resonators in Si/C rods

In this paper, we employed multilayer ring resonators in a silicon rod base structure to realize 6-channel and 8-channel demultiplexers based on two-dimensional photonic crystals. Both the main rings and basic structures are composed of silicon rods, and the interior rings of the multilayer rings are composed of carbon. Employing silicon and carbon rods of different radii in multilayer ring resonators enhanced the coupling efficiency between the rings and waveguides. The average quality factor and power transmission efficiency were 4320 and 93%, respectively. Crosstalk values from \(-11\) to ?46 dB in conjunction with the mentioned characteristics suggest the use of the device for optical communication applications. The compact size of the proposed structure and the materials used make the proposed demultiplexer suitable for optical integrated circuits.     

Design and fabrication of a high-efficiency extreme-ultraviolet binary phase-only computer-generated hologram

As the development of extreme-ultraviolet (EUV) lithography progresses, interest grows in the extension of traditional optical components to the EUV regime. The strong absorption of EUV by most materials and its extremely short wavelength, however, make it very difficult to implement many components that are commonplace in the longer wavelength regimes. One such component is the diffractive optical element used, for example, in illumination systems to efficiently generate modified pupil fills. The fabrication and characterization of an EUV binary phase-only computer-generated hologram is demonstrated, allowing arbitrary far-field diffraction patterns to be generated. Based on reflective architecture, the fabricated device is extremely efficient. Based on an identically fabricated null hologram, the absolute efficiency into one diffracted order of 22% has been demonstrated. In the case where axially symmetric diffraction patterns are desired (both positive and negative diffraction orders can be used), the efficiency can be twice as high.