中国的主要水问题及水文学的机遇

从水资源开发利用与保护、水旱灾害防治等方面论述中国当前存在的主要水问题：水危机和水浪费同时存在、水污染日趋严重、防洪减灾任重道远、生态环境破坏严重、全球气候变暖产生不利影响；进而论述水文学研究面临的新课题：水文现象的不确定性、人类活动对水文的影响、水位频率计算、水资源开发利用的最佳效应、水资源供需分析、农业节水灌溉机理及水旱灾害的防治，并指出必须加强对这些新课题的研究     

加强无线电管理,日常监督检查势在必行

随着社会经济的迅速发展,无线电通信事业取得了很大进步,无线电通信广泛应用于各行各业,在经济发展、社会进步中发挥了重要的作用.但目前一些单位和个人无视国家有关频率管理和无线电设备管理的有关法规,擅自占用频率和非法设台情况比较严重,极大地损害了电磁环境和秩序,干扰了航空导航、公安、消防、护林防火、“三防”等重要通信业务,对无线电通信的可持续性发展造成了极大隐患,加强无线电管理日常监督检查势在必行.     

均衡营养早餐的研制

根据膳食营养的要求,以燕麦、爆裂玉米、奶粉、鸡胸肉、胡萝卜和香菜为原料,采用微波技术和冷冻干燥技术生产均衡营养早餐,确定了最佳的配方为燕麦片15g、爆裂玉米8g、奶粉10g、鸡肉丁5g、胡萝卜丁0.5g、香菜干0.5g、盐或糖1g.     

Instability due to Viscosity Stratification Downstream of a Centerline Injector

A common injector geometry upstream of a static mixer is the centerline injector. A flow instability can arise due to viscosity differences between the injected core‐flow and the outer co‐flow. This instability can adversely affect the effectiveness of the mixing operation. An experimental investigation of miscible viscosity‐stratified flow in a circular geometry was performed using Laser Induced Fluorescence (LIF) and Particle Image Velocimetry (PIV). The experimental results for the stable region agree with the analytical results. The unstable region exhibits different modes depending on the viscosity ratio, volume flux ratio, and Reynolds number. The modes include wavy core‐flow with fissures and wavy core‐flow with core breakup. The time‐averaged experiment velocity profiles for the unstable core indicate a broadening of the jet at the centerline, which is consistent with the LIF visualization.     

基于S-CDMA的HFC上行信道接入协议性能仿真分析

讨论了基于S－CDMA的HFC网上行信道的高效接入协议－SAMA，提出了双信道接入机制的工作原理，并对系统性能进行了分析与计算机仿真，得到一些有意义的结论。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

Fluorescence spectra of ARE2I5 and AREI3 in the solid state (A ≡ K, Rb, Cs, Ti; RE ≡ Sm, Eu)

The fluorescence spectra of ARE₂I₅(s) and AREI₃(s) (A ≡ K, Rb, Cs, Tl; RE ≡ Sm₁ Eu) have been studied systematically. The regular shift of the central wavelengths is discussed in a preliminary manner on the basis of crystal lattice field and covalence effects.     

27keV Ar~+斜入射时的Cu-Au合金溅射实验角分布

用27keV Ar~+分别在垂直和倾斜入射情况下,轰击了Cu-Au(30wt％)合金样品,测量了Cu和Au原子的溅射角分布。角分布是用卢瑟福背散射(RBS)技术分析Al捕获膜上的Cu-Au沉积成分而定量得到的。结果表明:(1)在Ar~+倾斜(θ=40°)入射时,Cu原子择优发射,且程度比垂直入射(θ_r=O°)时增强:(2)倾斜入射时,Cu原子的角分布显示出在接近于样品表面法线方向的发射角范围内(θ<45°),发射机率比垂直入射时减小。