STUDY ON Zn DIFFUSION IN Ge

In this report the diffusion of Zn into Ge is investigated.The experiments are accomplishedin an evacuated and sealed quartz ampoule using Zn as the diffusion source.The relation of the X_j-t and C_s-(1/T)is given.The influence of the source temperature on the surface micrograph is investigated.It is foundthat using the two-temperature process a smooth surface layer can be obtained.The effect of the thickness ofthe SiO_2 films on the mask ability for Zn is given.The leakage current can be reduced by evacuation annealing,     

STUDY OF Zn,Zn-Cd DIFFUSION IN In_x Ga_(1-x)As

In this report,the diffusion of Zn,Zn-Cd in In_xGa_(1-x)As is investigated using ZnAs_2and ZnAs_2+Cd as diffusion sources.The effect of the diffusion temperature,diffusion time,a variety of the diffusion source andcomposition x of the material on the relation of the(X_j-t~(1/2))are given.The diffusion velocity X_j~2/t of Zn inIn_xGa_(1-x)As is faster than that of Zn-Cd in In_xGa_(1-x)As,and at 500-600℃,the surface acceptorconcentration is from 1×10~(19)to 2×10~(20)cm~(-3),which is higher than that of Zn in InP.Reduction ofcontact resistance by use of In_xGa_(1-x)As contact layer for 1.3μm LED can be expected.     

InGaAsP/InP双异质结发光管I-V特性的研究

本文研究了InGaAsP/InP双异质结发光管的I-V特性,特别是有源区受主浓度、p-n结位置、限制层掺杂剂、热沉温度和制备工艺对正向导通电压(V_f)、初始发光电压V_0和反向击穿电压V_B的影响,及其与光功率、光谱特性的关系。并讨论了产生不同I-V特性的原因。     

STATISTICAL THEORY OF MOLTEN SALT SOLUTIONS Ⅱ. ENERGETIC PARAMETER OF SOLUTION OF BINARY SYSTEMS

提出了熔盐溶液的溶解能参数的概念,熔盐系A_nB_m-A_(n′)C_(m′)(A离子之价数为Z)的溶解能参数为: f(r)=Z~2nn′/m(r_A+r_B)+Z~2n′~2/m′(r_A+r_C)-2Z~2nn′/(2r_A+r_B+r_C)(n′/nm′+1/m) 熔盐系A_nB_m-C_(n′)D_(m′)(C离子之价数为Z′)的溶解能参数为: f(r)=n′Z′Z(n+(nZ/n′Z′)m′/m′(r_A+r_D)+nZZ′(m+nZ/Z′)/m(r_B+r_C)-nZ~2(n+m)/m(r_A+r_B)-n′Z′Z(n′+m′)/m′(r_C+r_D)。 溶解能参数是熔盐静电混合能的近似函数,当f(r)为正值时,溶液呈现负偏差,当f(r)为负值时,溶液呈现正偏差,f(r)可作为估计熔盐溶液的热力学性质和二元熔盐相图的近似方法。     

熔盐溶液的統計理論——第四部分A_2B-AC-AD-AE系的相平衡

根据我们以前提出的熔盐溶液的统计模型和零级近似规则溶液理论,导出了A_2B-AC-AD-AE型四元同离子系相图中A_2B初晶温度的计算方法.计算结果与若干实测数据符合较好。     

国内力敏传感器的研究进展

近年来，国内力学量传感器的研究与应用已有较大进展，研究内容不断深入，研究范围不断拓宽，器件结构新颖，性能与可靠性有所提高，使应用领域再行扩大．