Preparation of Compound Ultrafine CeO2 by Wet-Solid-Phase Mechanochemical Modification

To satisfy practical requirements from industrial applications, an alternate route for synthesis compound ultrafine CeO2 powders by wet-solid-phase mechanochemical modification using industrial grade hydrated cerium carbonate as raw material was proposed.The effect of modifier reaction percentage, reaction time, calcining temperature and modifier amount on particle size, density, suspensibility, and hardness of compound CeO2 powder was investigated.The phase evolutions of preparation process were characterized by XRD.SEM micrograph of the final product shows that compound CeO2 powders obtained are well-dispersed, spherically-shaped, uniformly-sized and submicron-sized particles.The method is readily available in raw material, low in cost, simple in process, and has great potential for industrialization.The compound CeO2 powders of different physical properties can be synthesized by controlling the above-mentioned influence factors in preparation process.     

Measured equation of invariance with linear tensor relation for three-dimensional scattering problems

The postulate of a linear tensor relation in the measured equation of invariance (MEI) is proposed for three-dimensional (3D) problems. As a result, all three components of the field vector to be solved are coupled in the MEI. Combined with the finite difference method, the present method is applied to the analysis of scattering by 3D conducting objects and results in a significant improvement in the accuracy of numerical results as compared to those obtained with an uncoupled linear relation.     

多粒度全光网中的多层联合路由

多粒度交换技术利用波带级路由以及光纤级路由,可有效降低光交叉连接器的复杂度.但多粒度交换增加了光网络的逻辑层次结构,使得网络中的路由与资源分配问题更为复杂,因此,在多粒度全光网中实现多层联合路由是提高网络性能的关键.本文对多粒度交叉连接结构进行了分析,并对多粒度全光网中的多层联合路由问题进行了研究.     

Effect of thermal treatment on ZnO substrate for epitaxial growth

ZnO is a highly efficient photon emitter, and has optical and piezoelectric properties that are attractive for a variety of applications in sensors and potentially optoelectronic devices such as emitters. Due to its identical stacking order and close lattice match to GaN, it is also being developed as a substrate material for GaN epitaxy. However, the surface finish of the ZnO is such that much of the damage induced by sawing and follow up mechanical polishing remains. We developed a thermal treatment method to eliminate surface damage on the 0 face of ZnO (0 0 0 1) to prepare it for epitaxial growth. Atomic force microscopy images of ZnO (0 0 0 1) annealed at 1050 °C for 3 h etc. show that residual scratches from mechanical polishing are removed and atomically flat, terrace-like surfaces are attained. In addition, low-temperature photoluminescence and high-resolution X-ray diffraction measurements have been employed to investigate the effect of annealing on ZnO substrates.     

高阻值Cd1-xZnxTe晶体的生长及其性能测试

通过适当的工艺措施，采用Bridgman法生长了直径为30mm的X射线及γ射线探测器级的Cd.9Zn0．1Te晶锭．测试结果表明：该晶锭结晶质量良好，位错密度低，成分均匀，杂质含量低，红外透过率和电阻率都十分接近本征Cd.9Zn0．1Te的值．并从晶体的生长特性、缺陷和杂质的角度，分析了生长高性能晶体的条件，研究了生长Cdl-xZnxTe晶体的x值与缺陷和杂质浓度之间的关系．     

杭-宁输气管道工程定向钻穿越设计浅析

杭州-宁波天然气输气管道工程（简称杭-宁输气管道工程）是浙江省天然气长输管网主干线之一，根据工程河流穿越众多、渠塘穿越频繁的特点，对杭-宁输气管道工程水域穿越的特点和穿越方式作了总结；重点分析了水域定向钻穿越设计及需要注意的问题，为今后浙江省天然气管网建设的水域穿越设计作了探讨。     

转动玻璃圆筒激光器

本文介绍了转动玻璃圆筒激光器的设计及实验结果,得到了脉冲能量为13J,重复频率为15Hz的激光输出。电光转换效率为2.2％,斜效率为3.4％。     

Preparation and gas-sensing characteristics of nanocrystalline spinel zinc ferrite thin films

Zinc ferrite is a promising sensor material. In this paper, thin films of nanocrystalline zinc ferrite were deposited on alumina substrates by nebulization of a 0.01-M solution of a mixture of ZnCl/sub 2/ and FeCl/sub 3/ in ethanol (Zn:Fe=1:2) followed by pyrolysis and annealing in flowing air. The resulting films were characterized by X-ray diffraction and scanning electron microscopy, and the gas-sensing properties of as-deposited films were also investigated.     

A practical SPICE model based on the physics and characteristics of realistic single-electron transistors

A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures.