Universities through the eyes of bibliographic databases: a retroactive growth comparison of Google Scholar,Scopus and Web of Science

Scientometrics - The purpose of this study is to ascertain the suitability of GS’s url-based method as a valid approximation of universities’ academic output measures, taking into...     

Selective Coating of SnS on the Bio‐Inspired Moth‐Eye Patterned PEDOT:PSS Polymer Films

A new strategy for the selective coating of tin sulfide (SnS) on the surface of moth‐eye patterned (MEP) conducting polymer film is studied by considering the optical properties of the antireflective moth‐eye pattern and flexibility of polymer films. The semiconductor SnS is selectively coated on the surface of MEP microdomes of poly(3,4‐ethylenedioxythiophene) poly(styrene‐sulfonate) (PEDOT:PSS) film. The SnS coated MEP film is obtained by using pore selectively SnS thin layer functionalized polystyrene honeycomb‐patterned porous (HCP) film as a template. Aqueous PEDOT:PSS solution is poured on the SnS functionalized HCP films and detached for the fabrication of SnS coated MEP films. The films show a satisfactory photo‐responsive property under solar stimulated light illumination due to the antireflective MEP structure of PEDOT film and homogenous SnS coating on the surface of the conducting polymer.     

Controlling thickness to tune performance of high-mobility transparent conducting films deposited from Ga-doped ZnO ceramic target

Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm²/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm²/Vs, low resistivity of 5.3 × 10^?4 Ωcm, and good transmittance of 83.3 %.     

Differential Game for Distributed Power Control in Device-to-Device Communications Underlaying Cellular Networks

Wireless Personal Communications - In the formulating of power control for wireless networks, the radio channel is commonly formulated using static models of optimization or game theory. In these...     

Advanced Surface of Fibrous Activated Carbon Immobilized with FeO/TiO2 for Photocatalytic Evolution of Hydrogen under Visible Light

FeO-doped TiO₂ nanoparticle photocatalysts were immobilized onto the surface of fibrous activated carbon (ACF) via a sol-gel process. As an adsorbent and photocatalyst, FeO-TiO₂ on immobilized ACFs (FeO-TiO₂/ACF) greatly improved the photocatalysis rate of hydrogen production as compared with pure TiO₂ and ACF-TiO₂ under UV irradiation and visible light. The addition of ACFs surface significantly reduced the photogenerated pairs of electrons-hole recombination, thereby promoting the photocatalysis action of doped photo-metal oxides of FeO-TiO₂. Co-doping of FeO onto the lattice of the TiO₂ approach can improve the absorption activity of visible light through photo-metal oxide of TiO₂ and further enhance hydrogen production under visible light. The photocatalytic fabrics (FeO-TiO₂/ACF) were effortlessly split out from the experimental solution for re-utilization and exhibited high stability even after five complete regeneration cycles.     

内置旁路型软起动器的替代性

本文根据软起动器的发展趋势，就目前市场上应用的三种类型的软起动器进行分析，说明各自的优缺点，同时给出结论，内置旁路型淘汰其它类型的软起动器的必要性。     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.