Modeling of ion-bombardment damage on Si surfaces for in-line analysis

Structures and mechanism of ion-bombardment damage on silicon wafers exposed to plasma were investigated comprehensively. By using molecular dynamics simulations high-resolution transmission electron microscopy, and composition analysis by high-resolution Rutherford backscattering spectroscopy, features such as gradual transition from the SiO₂ surface to the Si substrate and interface roughness were addressed. On the basis of these findings, the optical model that addresses the characteristics of plasma-damaged Si surfaces is given for ellipsometric analysis. The proposed model includes an interface layer modeled as a mixture of SiO₂ and Si phases. A part of the interface layer could not be removed by wet-etching, signifying the distinct features of the interface layer that are difficult to remove. The proposed model is anticipated to be practical for in-line monitoring of plasma-induced damage.     

Optical rotation sensing by the geometric effect of fiber-loop twisting

An optical technique for sensing a rotation angle is described and experimental results are presented. When a loop of an ideal fiber that exerts no linear birefringence is deformed into a nonplanar curve, the azimuth angle of linearly polarized light propagated in the fiber is rotated. The technique is based on this effect of geometric polarization rotation in an optical fiber. A twisted single-mode fiber is substituted for the ideal fiber. Experimental results include studies of polarization rotation and variations of light propagated in a loop of a twisted single-mode fiber under deformation.     

Crystal growth of MgAlB14-type compounds using metal salts and some properties

LEAlB₁₄ (orthorhombic, Imam) (LE = Li, Mg) crystals were grown using metal salts (Li₂CO₃, LiF, LiI, MgO, MgF₂, MgI₂) and crystalline boron from a high-temperature aluminium metal flux. The growth conditions for growing LEAlB₁₄ were established using the starting mixtures of B/LE = 2.0, and Al metal was added to each mixture at a mass ratio of 1:15–20. LEAlB₁₄ crystals from the Al-self flux using metal salts could be obtained from all the different salts. The maximum dimensions of LiAlB₁₄ and MgAlB₁₄ crystals were approximately 18 and 12 mm for the crystals obtained from LiF and MgF₂. The unit-cell parameters of as-grown LEAlB₁₄ are as follows: for LiAlB₁₄, obtained from LiF, a = 0.5846 (2) nm, b = 0.8144 (2) nm, c = 1.0355 (3) nm, V = 0.4930 (2) nm³: for MgAlB₁₄, obtained from MgF₂, a = 0.5845 (2) nm, b = 0.8114 (2) nm, c = 1.0330 (3) nm, V = 0.4899 (3) nm³. Microhardness, oxidation resistance and magnetic susceptibility of these materials are described in detail.     

Synthesis of ordered mesoporous carbon thin films at various temperatures in vapor infiltration method

Mesoporous carbon thin films with ordered structures were prepared by using resorcinol-surfactant self-assembly. A mixture of resorcinol, surfactant, and ethanol coated on silicon substrates was exposed to formaldehyde vapor as a cross-linking agent to form structured resorcinol/formaldehyde resin films. The films were then carbonized at 800 °C in an inert atmosphere to remove the surfactant and to obtain structured carbon materials. With this vapor infiltration method, thin films with several structures were obtained from the same precursor solution by employing different vapor infiltration temperatures. The results were interpreted from the transformation of the self-assembly during the vapor infiltration process.     

A statistical evaluation of the free energy of Fe-base ternary ordering alloys

The free energy of the Fe-base ternary ordering alloys whereB2 andD0₃ ordered structures are formed is evaluated. The statistical theory is employed using a pairwise interaction approximation taking into account not only the atomic interaction but also the magnetic interaction, based upon the Bragg-Williams-Gorsky model. The application of this model on Fe-Si-Co ordering alloys are demonstrated. The propriety of the calculation results are performed by comparing the experimental results. The influences of the magnetic energy to the stability of ordered structures are also demonstrated.     

An adaptive array utilizing an adaptive spatial averaging technique for multipath environments

When the interference is coherent with the desired signal, the conventional adaptive arrays working under the guiding principle of output power minimization tend to cancel the desired signal by using the coherent interference. A technique is described which enables the adaptive array to function even under such an environment. The array is divided into subarrays, whose input correlation matrices are adaptively averaged so as to produce a Toeplitz matrix which would be obtained when the interference did not correlate with the desired signal. The averaged matrix is now free from correlation terms between the desired signal and interference, and therefore may be used to derive the optimum weight for the array element just as in the ordinary radio environment of incoherent interference. Numerical examples show that the new adaptive array is highly capable to suppress the coherent interferences as well as incoherent ones.     

Microstructures of Annealed TiNiSn-Based Alloy Ribbons

The thermoelectric half-Heusler compounds Ti _x NiSn_0.998Sb_0.002 (x = 1.0 to 1.2) and Ti _y Zr_0.25Hf_0.25NiSn_0.998Sb_0.002 (y = 0.5 to 0.65) with nonstoichiometric nominal compositions were prepared by spin-casting and subsequent annealing at 1073 K for 24 h. The dimensionless figure of merit ZT at room temperature was maximized at x = 1.1 and y = 0.6 in Ti-rich compounds through an increase in absolute Seebeck coefficients despite a decrease in electrical conductivities. ZT reached 0.07 at x = 1.1 and 0.14 at y = 0.6. In powder x-ray diffraction analysis, minor phases of β-Sn, TiNi, Ti₂Sn, and Ti₅Sn₃ were observed in addition to a major phase of half-Heusler. The quantity of the minor phases was minimized at x = 1.1 and y = 0.55, where the absolute Seebeck coefficients are maximized. In transmission electron microscopic (TEM) analysis of Ti_0.55Zr_0.25Hf_0.25NiSn_0.998Sb_0.002, crystal grains of the half-Heusler phase, from several hundred nanometers to several micrometers in size, were observed. TEM energy-dispersive spectroscopy measurements indicated that fluctuations of Ti, Zr, and Hf compositions within the Ti-site in the half-Heusler phase may occur. Thermoelectric properties were improved at x = 1.1 and y = 0.6 rather than at the stoichiometric compositions of x = 1.0 and y = 0.5 due to minimization of the precipitate quantities.     

International mobility of researchers in robotics,computer vision and electron devices: A quantitative and comparative analysis

We investigated author information in scientific articles by approximately 7,000 researchers for a quantitative analysis of researchers’ international mobility. From top journals, we traced the movements of more than 2,200 researchers in the research domains of robotics, computer vision and electron devices. We categorized countries’ characteristics for the balance between the inflow and the outflow of researchers moving internationally. Flow patterns of international mobility confirm that the United States, China and India exhibit the greatest global flows of researchers, with Singapore and Hong Kong attracting remarkable numbers of researchers from other countries. International mobility focusing on institutions reveals that universities in Singapore receive as many foreign researchers as do research universities in the United States. Furthermore, firms and international collaborative research institutes act as alternative receivers to the universities in the electron devices research domain.