闪耀在西方哲学里的神光

在西方,一直存在着一种普遍现象,即:哲学的宗教化和宗教的哲学化。作为人类精神活动的两种形式,哲学与宗教总是相生相随的。作者以历代西方哲学家的理论内涵作为依据,探讨哲学里的神光及其于不同阶段的不同表现和特质,试图说明宗教对西方哲学的深远影响和潜在魅力。     

试析朱熹《论语集注》中的训诂

朱熹的训诂学是宋学的代表,他将义理与传统训诂学溶为一炉,克服了理学家空谈义理的时弊,其<论语集注>是宋代<论语>注释的代表作.文章从训诂的视角、训诂的内容和训诂术语来分析朱熹<论语集注>中的训诂.     

Corrosion inhibition of a hygroscopic inorganic dust-depressor

1. Introduction The hygroscopic inorganic dust-depressor is usually applied for low-grade roads, such as in open-pit mines. This sort of dust-depressor is generally made of several kinds of chlorides and oxides with hygroscopicity, which have the double f…     

洞外井点降水在地下人行通道工程施工中的应用

武汉市青年路（北湖西路）地下人行地道工程施工中，为了疏干通道土层范冒内的潜水及上层滞水，固结地层为施工创造无水作业环境，采用了洞外井点降水。通过实践，这种施工方法对于加固地层，保证掌子面的稳定起到了很好的效果。     

硒化镉纳米粒子与碘化三甲氨基苯基卟啉钻复合膜光学性能研究

为了探索CdSe纳米粒子合成的最佳条件及其与碘化三甲氨基苯基卟啉钴（CoTAPPI）复合膜的光学性能，采用湿化学法合成了CdSe纳米粒子；利用逐层沉积法组装了CdSe—CoTAPPI复合膜。用紫外-可见吸收光谱监测了成膜过程。利用荧光光谱比较系统地研究了聚苯乙烯磺酸钠（PSS）、放置时间、热处理、紫外光照射等条件对复合膜发光性能的影响，结果发现复合膜的发光性能相对于单一组份的CASe纳米粒子和CoTAPPI都有很大程度改变。     

胎儿心电的提取方法分析

介绍了胎儿心电的提取方法,提取过程中要克服母体工频的干扰,以及母体心电本身的干扰,对胎儿心电的提取要尽可能降低这些噪声,由此通过相干平均、相关平均、自适应滤波3种主流的信号处理方法,建立了3种方法的电路原理图,从信号处理上分析了各种方法的优缺点,并给出了理论分析。根据不同的临床目的,可以采取不同的方法,达到最佳的胎儿心率监护。     

Metal-defined polymeric variable optical attenuator

A variable optical attenuator (VOA) based on a metal-defined polymeric optical waveguide has been demonstrated for the first time. The metal film stressor deposited on top of the upper cladding layer not only produces the refractive index change within the core layer, but also acts as a thin-film heater allowing thermal tuning of the optical power within a metal-defined optical waveguide. Fabricated devices exhibit greater than 25 dB of optical attenuation with an applied electrical current of /spl sim/40 mA at 1550-nm wavelength. The switching speed of the VOA exhibits 800 /spl mu/s of rising and 720 /spl mu/s of falling time.     

Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-μm p-Type Modulation-Doped Quantum-Dot Laser

A room-temperature negative characteristic temperature (T₀ ) and ultralow threshold current density (J_th) of 48 Amiddotcm^-2 are demonstrated for a 1.3-mum InAs quantum dot laser. These characteristics are obtained by combining a high-growth-temperature GaAs spacer layer with p-type modulation doping of the quantum dots in multiple layer dot-in-a-well structures. Through a comparison of p-doped and undoped devices, a photon coupling mechanism is proposed to account for the different temperature dependences of Jth for the two devices. Numerical simulations based on a rate equation model, which includes photon coupling between ground and excited quantum dot states, are performed. The simulations are able to account for the very different temperature-dependent Jth behavior of the doped and undoped device     

一种采用共栅频率补偿的轨到轨输入/输出放大器

提出了一种采用共栅频率补偿的轨到轨输入/输出放大器,与传统的Miller补偿相比,该放大器不仅可以消除相平面右边的低频零点,减少频率补偿所需要的电容,还可获得较高的单位增益带宽.所提出的放大器通过CSMC 0.6μm CMOS数模混合工艺进行了仿真设计和流片测试:当供电电压为5V,偏置电流为20μA,负载电容为10pF时,其功耗为1.34mW,单位增益带宽为25MHz;当该放大器作为缓冲器,供电电压为3V,负载电容为150pF,输入2.66 Vpp10kHz正弦信号时,总谐波失真THD为-51.6dB.     

High-performance 94-GHz single balanced mixer using 70-nm MHEMTs and surface micromachined technology

We reported 94-GHz, low conversion loss, and high isolation single balanced active gate mixer based on 70-nm gate length InGaAs/InAlAs metamorphic high-electron mobility transistors (MHEMTs). This mixer showed that the conversion loss and isolation characteristics were 2.5/spl sim/3.5 dB and under -29 dB in the range of 92.95/spl sim/94.5 GHz, respectively. The low conversion loss of the mixer is mainly attributed to the high-performance of the MHEMTs exhibiting a maximum drain current density of 607 mA/mm, an extrinsic transconductance of 1015 mS/mm, a current gain cutoff frequency (f/sub t/) of 330 GHz, and a maximum oscillation frequency (f/sub max/) of 425 GHz. High isolation characteristics are due to hybrid ring coupler which adopted dielectric-supported air-gapped microstrip line structure using surface micromachined technology. To our knowledge, these results are the best performance demonstrated from 94 GHz single balanced mixer utilizing GaAs-based HEMTs in terms of conversion loss as well as isolation characteristics.