MOSFET亚阈特性分析与低温按比例缩小理论的研究

器件尺寸按比例缩小是实现超大规模集成电路的有效途径，但寄生和二级效应却将器件限在一定的水平，本文在对比分析常温与低温下小尺寸器件效应的基础上，重点研究了ＭＯＳ器件亚阈特性对器件性能及按比例缩小的影响，并根据低温工作的特点，提出了ＭＯＳ器件一种低温按比例缩小规则，该原则对低温器的优化设计，从而更大程度在提高电路与系统性能具有重要的指导意义。     

用单片机控制的安全报警器的设计

文中简要地介绍了一个具有分散采集信号，集中报警的安全报警器的设计，作者利用单片机的优点和功能，成功地设计了复盖地域大，既简单又灵活的报警器。     

NUMERICAL SIMULATION OF STRATIFIED FLOW WITH BOTH VERTICAL TEMPERATURE GRADIENT AND VERTICAL SALINITY GRADIENT

Density stratified flow with both the vertical temperature gradient and the verti-cal salinity gradient is simulated numerically, in which turbulent terms are calculated by a sim-plified turbulence stress/flux algebraic model. The feature of stratification and turbulence is de-scribed correctly by the model. The computational results agree well with the experimental data.However, the k-e turbulence model is not so successful.     

方盒形带凸缘件的板料形状优化设计

本文用大变形刚塑性有限元模拟正方形板料在方冲头拉延下的凸缘变形过程，并以所获得的工件形状与金属流动方向为依据，对初始板料形状进行修正。对修正后的坯料形状进行二次模拟，获得了与给定凸缘形状基本吻合的拉延件形状。文中对不同凸缘圆角对极料优化形状的影响作了计算，讨论了在保证边界轮廓位置不变的条件下网格划分的方法。     

WQ—10型煤气平焰烧嘴的半工业性试验研究

对ＷＱ－１０型煤气平焰烧嘴进行半工业性试验，得到了该烧嘴较长时间运行下的一些性能。结果表明，该烧嘴平火焰稳定，炉顶温度分布均匀，燃烧烟气中ＣＯ、ＮＯ含量达到了ＹＢ／Ｔ０６２－９４标准的要求。     

圆锥式与斜平面式活络模的特点及比较

阐述了生产子午线轮胎用圆锥式和斜平面式活络模具在制造工艺、使用性能、维修和热传导等方面的差异。认为圆锥式结构更优于斜平面式。     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.     

Electrical characterization of porous BaTiO3 using impedance spectroscopy in humid condition

The humidity response characteristics of La doped BaTiO₃ with different sintered densities and room temperature electrical conductivities were investigated using complex impedance measurement. The samples with low density and high resistivity showed the large and nearly linear sensitivity to the change of humidity. The impedance spectra of samples, when exposed to high humidity, can exhibit microstructure-related features, even though they do not give rise to a noticeable characteristic change when exposed to low humidity. The observed impedance patterns were dependent upon the density, and hence the oxidation kinetics of BaTiO₃.     

提高K-9曲拐质量的热处理工艺

K-9曲拐质量不合格主要是由于热处理后，珠光体数量太少所引起。因此应用正交试验，合理地选择了热处理工艺参数，提高了出炉温度，增加了珠光体数量，解决了K-9曲拐的质量问题。     

Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p₂-Ga_0.8In_0.2As_0.19Sb_0.81/p₁-Ga_0.9In_0.1As_0.09Sb_0.91 and N₁-GaSb/n₂-Ga_0.9In_0.1As_0.09Sb_0.91/p-Ga_0.8In_0.2As_0.19Sb_0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga_0.8In_0.2As_0.19Sb_0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N₁-n₂-p structure is more sensitive than that with the p₁-side surface recombination velocity for the N-p₂-p₁ structure. In the N-p₂-p₁ structure with the incident light from the p₁-side surface, two-color detection is achieved.