InxGa1−xAs (x=0.25–0.35) grown at low temperature

In_xGa_1−xAs (x=0.25–0.35) grown at low temperature on GaAs by molecular beam epitaxy is characterized by Hall effect, transmission electron microscopy, and ultrafast optical testing. As with low temperature (LT) GaAs, the resistivity is generally higher after a brief anneal at 600°C. High-resolution transmission electron microscopy shows all the as-grown epilayers to be heavily dislocated due to the large lattice mismatch (2–3%). When the layers are annealed, in addition to the dislocations, precipitates are also generally observed. As with LT-GaAs, the lifetime shortens as growth temperature is reduced through the range 300–120°C; also, the lifetime in LT-In_xGa_1−xAs is generally shorter in as-grown samples relative to annealed samples. Metal-semiconductor-metal photodetectors fabricated on the material exhibit response times of 1–2 picoseconds, comparable to results reported on GaAs grown at low temperature, and the fastest ever reported in the wavelength range of 1.0–1.3 μm.     

Ionic conductivity in poly(vinyl butyral) based polymeric electrolytes: Effect of solvents and salts

Li⁺ conductive solid polymeric electrolytes (SPEs) have been prepared by complexing Li salts LiX (X = I, SCN, CLO4, CF3SO3) with poly(vinyl butyral) (PVB) an amorphous polymer with a low T_g value and well known for its outstanding laminating properties. These self-supporting SPEs have been prepared by the solution cast technique using cyclohexanone, tetrahydrofuran, and n-butyl alcohol as solvents. The XRD and DSC investigations correlated to measured ionic conductivities have revealed that in addition to the amorphous nature of the resulting complex, its T_g value, the concentration and the values of the lattice energies of the complexing salts, the solvent used in making the SPEs also govern the value of ionic conductivity. Highest ionic conductivity values attained in SPEs made with n-butyl alcohol are explained in terms of the interception of the hydrogen bonding due to solvation.     

Cut off frequency and transit time analysis of lightly doped drain (LDD) MOSFETs

Analytical model for the transconductance, cut off frequency, transit time and fringing capacitance of LDD MOSFETs is presented with a simple approach. The analysis is carried out considering the LDD device as a conventional MOSFET with a series resistance [Z.-H. Liu et al., Threshold voltage model for submicrometer MOSFETs. IEEE Trans Electron Devices 1993; ED-40: 86–94] and a simple closed form expressions for cut off frequency and transit time is obtained. The total gate capacitance, i.e. the geometric and fringing capacitance, is calculated for both LDD and non-LDD devices and lower fringing capacitance is reported in LDD devices. Lower cut-off frequencies and higher transit time are reported in LDD devices for the same channel length.     

Quantitation of Cefaclor in Pharmaceutical Dosage Forms Using High Performance Liquid Chromatography

A stability-indicating high-performance liquid chromatography for the quantitation of cefaclor in pharmaceutical dosage forms has been developed. The method is accurate and precise with a percent relative standard deviation of 1.2 based on 5 readings. A number of inactive ingredients present in the capsules and suspensions did not interfere with the assay procedure. The extraction procedure from the dosage forms is very simple. The recovery from the synthetic mixtures was quantitative. The capsules which had expired 3 years ago lost only 3% of the potency. The drug appears to be very sensitive to strong acids or bases since a 5 minute boiling caused 100% degradation of drug in both the solutions.     

A generalized approach to the reconstruction of a restricted class of digitized planar curves

Reconstruction of an original continuous curve and the estimation of its parameters from the digitized version of the curve is a challenging problem, as quantization always causes some loss of information. In this paper, we have developed a scheme for reconstruction which is applicable to a class of curves having at the most two parameters. The class of curves for which the scheme works has also been characterized. We have shown that for one-parameter curves the exact domain of values of the parameter can be obtained. But in the two-parameter case, only the smallest rectangle containing the domain can be realised. The distinctive feature of our scheme is that it provides a unified approach to solve the reconstruction and the domain-finding problem for a class of curves.