High-speed source-heterojunction-MOS-transistor (SHOT) utilizing high-velocity electron injection

We have developed the source-heterojunction-MOS-transistor (SHOT), a novel high-speed MOSFET with relaxed-SiGe/strained-Si heterojunction source structures for quasi-ballistic or full-ballistic transistors. Using the band-offset energy at the source SiGe/strained-Si heterojunction, high velocity electrons can be injected into the strained-Si channel from the SiGe source region. For the first time, we have experimentally demonstrated that the transconductance is enhanced in SHOT for high applied drain voltage, compared to that of strained- and conventional silicon-on-insulator MOSFETs. We have also shown that the transconductance enhancement in SHOT depends on both the gate drive and the drain bias.     

Millimeter-Wave Radiometer for the Measurement of Stratospheric ClO Using a Superconductive (SIS) Receiver Installed in the Southern Hemisphere

A new sensitive radiometer for atmospheric minor constituents has been developed by Nagoya University and the National Institute for Environmental Studies (NIES). The instrument equipped low-noise superconducting (SIS) mixer with a system noise temperature of ≈200K (SSB) at 204GHz. The SIS mixer is operated in a single side band mode with a side band ratio grater than 10dB by adjusting the two tunable backshorts of the mixer. Since any additional SSB filters are not necessary, we can simplify the quasi-optical system and reduce the standing waves which makes difficult to achieve a flat spectral baseline. We installed the observation system at Las Campanas Observatory, Chile in December 1999, and started the test observation from 2000 October. We have detected significant ClO emission at 204.3 GHz with an actual observation time of only 4 hours. This is the first detection of the ClO at 40km altitude from the mid-latitude region of the southern hemisphere. The Nagoya-NIES system has enabled continuous monitoring of ClO in the stratosphere with a time resolution of 4 or 5 hours.     

Beer brewing using a fusant between a sake yeast and a brewer's yeast

Beer brewing using a fusant between a sake yeast (a lysine auxotrophic mutant of sake yeast K-14) and a brewer's yeast (a respiratory-deficient mutant of the top fermentation yeast NCYC1333) was performed to take advantage of the beneficial characteristics of sake yeasts, i.e., the high productivity of esters, high tolerance to ethanol, and high osmotolerance. The fusant (F-32) obtained was different from the parental yeasts regarding, for example, the assimilation of carbon sources and tolerance to ethanol. A brewing trial with the fusant was carried out using a 100-l pilot-scale plant. The fusant fermented wort more rapidly than the parental brewer's yeast. However, the sedimentation capacity of the fusant was relatively low. The beer brewed using the fusant contained more ethanol and esters compared to that brewed using the parental brewer's yeast. The fusant also obtained osmotolerance in the fermentation of maltose and fermented high-gravity wort well.     

Integrated protocol for optimized link state routing and localization: OLSR-L

Localization protocol is important for estimating node positions in a wireless multi-hop network. Routing protocol is also important for controlling paths. In previous research, localization and routing protocols have been discussed and evaluated separately. In this paper, we propose an integrated protocol for optimized link state routing (OLSR) and OLSR based localization (ROULA). Our protocol enables simultaneous localization and routing. ROULA’s localization is performed using OLSR overhead such as hello packets and routing tables. The routing overheads and the processing procedures can be efficiently integrated. We demonstrate that the integrated protocol for ROULA and OLSR enables simultaneous localization and routing.     

Development of systems reliability analysis code SECOM-2 for seismic PSA

An integrated code system SECOM-2, developed at the Japan Atomic Energy Research Institute (JAERI), has the following functions for systems reliability analysis in seismic probabilistic safety assessments (PSAs): (1) calculation of component failure probability, (2) extraction of minimal cut sets (MCSs) from a given fault tree (FT), (3) calculation of frequencies of accident sequences and core damage, (4) importance analysis with several measures with consideration of unique parameters of seismic PSAs, (5) sensitivity analysis, and (6) uncertainty analysis. This paper summarizes the special features of SECOM-2 to perform the analyses mentioned above. At JAERI, using an integrated FT which represents seismically induced core damage due to all initiating events as a system model to calculate core damage frequency of a nuclear power plant, SECOM-2 can calculate conditional point estimate probabilities of system failures, losses of safety functions, and core damage as a function of earthquake motions. The point estimate is computed by a method which gives an exact numerical solution using the Boolean arithmetic model method. As for consideration of correlation of component failure, which has been an important issue in seismic PSAs, a new technique based on direct FT quantification by a Monte Carlo simulation is being added to SECOM-2. Adding this technique, the core damage frequency can be calculated not only with the upper bound approximation based on MCSs but also with a near exact solution taking into account the correlation among all components. This paper also presents the preliminary results of a seismic PSA of a generic BWR plant in Japan performed at JAERI to demonstrate the functions of the SECOM-2 code.     

Electrostatic Assisted Fabrication of Porous Ceramics and Functional Fibers

A new method for fabricating porous ceramics and functional fibers was devised. In this work, fine dielectric particles, Al₂O₃, and conductive particles, LSM (Sr-doped LaMnO₃), suspended in gas phase were controlled to form chain aggregates under the action of an electrostatic field. After sintering, the chain aggregates became fiber-like, and a three-dimensional network layer of Al₂O₃ was obtained. The separation experiment of silica particles from water showed that it had good performance. This process will be simpler than the chemical vapor deposition (CVD) method because fine particles are from powder dispersion, not prepared by CVD. Furthermore, many kinds of commercial powder products can be used directly.     

Preparation of super-hydrophobic surface on biodegradable polymer by transcribing microscopic pattern of water-repellent leaf

Super-hydrophobic surface has been prepared onto biodegradable polymer by a combination of transcribing microscopic structure of a water-repellent leaf and a chemical treatment. An aroid leaf has been chosen for the preparation of the super-hydrophobic surface since the leaf has concavity microscopic structure, which is easy to handle for a material use. The microscopic pattern was transcribed onto poly(ε-caprolactone) (PCL) sheet by using replica method, then it was further treated by soaking in a mixture of acetone/methanol solution. The resultant PCL having the microscopic concavity pattern showed high water contact angle of 148° and also showed antibacterial property for filamentous fungi.     

Novel SOI p-channel MOSFETs with higher strain in si channel usingdouble SiGe heterostructures

We have studied p-channel advanced SOI MOSFETs using double SiGe heterostructures fabricated by the combination of SIMOX and high-quality strained-Si/SiGe regrowth technologies, in order to introduce higher strain in Si channel. It was revealed that this double SiGe structure of second Si_0.82Ge_0.18Si_0.93Ge_0.07 allows the second SiGe layer to relax by about 70%, because of the elastic energy balance between the second and the first-SiGe layers. As a result, the strain of Si layer on this double SiGe structure becomes higher than that of the single SiGe structure. Strained SOI p-MOSFETs using the double layer SiGe structure exhibited higher hole mobility than that of strained-SOI MOSFETs with single Si_0.9Ge_0.1 structure. The hole mobility enhancement of 30% and 45% was achieved in the strained-SOI MOSFETs with double SiGe structures, compared to that of the universal curve and the control-SOI MOSFETs, respectively