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91.
This paper describes the application of an expert system for the evaluation of the short-term thermal rating and temperature rise of overhead conductors. The expert system has been developed using a database and Leonardo expert system shell which is gaining popularity among commercial tools for developing expert system applications. The expert system has been found to compare well when evaluated against site tests. A practical application is given to demonstrate the usefulness of the expert system developed 相似文献
92.
Although the good appearance and biocompatibility of dental porcelains, failures are still of considerable concern because of the limited properties to all ceramic system. Physical properties that might be considered ideal include high strength, resistance to abrasion, and resistance to the hostile oral environment. Porcelain has been considered by many of its physical characteristic are similar to those of enamel. In 1983 a new modality of treatment, the etched porcelain restoration was introduced by Simonsen and Calamia. Numerous investigations have shown the strength of the etched porcelain bonded to composite resin and also the clinical success of this porcelain to be used as laminated veneers and etched inlays and onlays. 相似文献
93.
94.
Tan Fu Lei Tang Po Chen Horng-Chih Lin Chun-Yen Chang 《Electron Devices, IEEE Transactions on》1995,42(12):2104-2110
A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p+-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF2+-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF2+ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm2 at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm2, respectively. These results demonstrated that a uniform ultrashallow p+-n junction can be obtained by using a thin Si-B layer as a diffusion source 相似文献
95.
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97.
W.K ChiuS.T Tan 《Computer aided design》2002,34(13):997-1010
In many applications the location of the centre of gravity of a mechanical part is an important factor that a designer must consider. If it is not in a desired location, a part might not work properly, e.g. unbalanced force might be generated in a rotational part. After a part is modeled, its centre of gravity cannot be altered unless its external shape or internal mass distribution is changed. However, the external shape is usually constrained by other design considerations. In this paper, an algorithm is proposed for controlling the centre of gravity of a hollowed part. Using this algorithm, the location of the centre of gravity of a part is controlled by changing its internal mass distribution. 相似文献
98.
Dasgupta U. Wooi Gan Yeoh Chun Geik Tan Sheng Jau Wong Mori H. Singh R. Itoh M. 《Microwave Theory and Techniques》2002,50(11):2443-2452
An implementation of the IF section of WCDMA mobile transceivers with a set of two chips fabricated in an inexpensive 0.35-/spl mu/m two-poly three-metal CMOS process is presented. The transmit/receive chip set integrates quadrature modulators and demodulators, wide dynamic range automatic gain control (AGC) amplifiers, with linear-in-decibel gain control, and associated circuitry. This paper describes the problems encountered and the solutions envisaged to meet stringent specifications, with process and temperature variations, thus overcoming the limitations of CMOS devices, while operating at frequencies in the range of 100 MHz-1 GHz. Detailed measurement results corroborating successful application of the new techniques are reported. A receive AGC dynamic range of 73 dB with linearity error of less than /spl plusmn/2 dB and spread of less than 5 dB for a temperature range of -30/spl deg/C to +85/spl deg/C in the gain control characteristic has been measured. The modulator measurement shows a carrier suppression of 35 dB and sideband/third harmonic suppression of over 46 dB. The core die area of each chip is 1.5 mm/sup 2/. 相似文献
99.
100.