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111.
In this paper, we present a technique for using an additional parallel neural network to provide adaptive enhancements to a basic fixed neural network-based nonlinear control system. This proposed parallel adaptive neural network control system is applicable to nonlinear dynamical systems of the type commonly encountered in many practical position control servomechanisms. Properties of the controller are discussed, and it is shown that if Gaussian radial basis function networks are used for the additional parallel neural network, uniformly stable adaptation is assured and the approximation error converges to zero asymptotically. In the paper, the effectiveness of the proposed parallel adaptive neural network control system is demonstrated in real-time implementation experiments for position control in a servomechanism with asymmetrical loading and changes in the load 相似文献
112.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
113.
A trade-off analysis on the cost and system packaging metrics of an electronic product aimed at the commercial/retail industry has been carried out. By comparing the system cost and packaging metrics with those of comparable consumer products, we have determined that there is opportunity for significant cost, size, and weight reduction of the overall electronics packaging system. These include the use of fine pitch IC packages, smaller discrete components, denser PCB wiring technology, double sided IC package surface mount, surface mount connectors, and improved plastics for the product housing. The analysis concluded that PCB area reduction of 40%, using a single PCB instead of three boards, reduction in board cost of over 50% and product weight reduction of over 28% are possible using available technologies. 相似文献
114.
An integral method is investigated and developed in the current work. The effects of the parameters of inlet distortions
on the trend of downstream flow feature in compressor are simulated. Other than the drag-to-lift ratio of the blade and the
inlet incidence angle, it is found that the distorted inlet velocity is another essential parameter to control the distortion
in propagation. Based on this study, a novel critical distortion line and corresponding critical distortion factor are proposed
to express the effect of the two essential inlet parameters on the propagation of distortion, namely, the inlet incidence
angle and the distorted inlet velocity. From the viewpoint of compressor efficiency, the propagation of inlet flow distortion
is further described by a compressor critical performance and its critical characteristic. The results present a useful physical
insight to an axial flow compressor behavior and asymptotic behavior of the propagation of inlet distortion, and confirm the
active role of compressor in determining the velocity distribution when compressor responds to an inlet flow distortion.
Received: 20 December 2001 / Accepted: 21 August 2002
The authors would like to thank HQ RSAF for permission to publish this work, their financial support and encouragement. The
first author wants to acknowledge Prof. Frank Marble of California Institute of Technology, for bringing the problem to the
author's attention and for his helpful discussion. 相似文献
115.
针对高职高专培养应用型人才的要求,分析了目前电工学课程教学的现状,提出了电工学课程改革方案。 相似文献
116.
117.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron
spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace
and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the
Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed
at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2. 相似文献
118.
MA Perrella C Patterson L Tan SF Yet CM Hsieh M Yoshizumi ME Lee 《Canadian Metallurgical Quarterly》1996,271(23):13776-13780
119.
Tan W.S. Uren M.J. Houston P.A. Green R.T. Balmer R.S. Martin T. 《Electron Device Letters, IEEE》2006,27(1):1-3
A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiN/sub x/ always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiN/sub x/ recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface. 相似文献
120.