国外模拟IC的发展现状分析

本文主要根据电子整机的发展要求,从集成化、高性能和高可靠等三方面分析国外模似IC的发展,进而说明模拟IC总的发展趋势及其表现。最后指出,模拟IC正面临一个新的变革时期。     

Hydride Vapor Phase Epitaxy of GaN Thick Films by the Consecutive Deposition Process Using GaCl3

GaN buffer and main layers were grown by the conventional hydride vapor phase epitaxy technique using GaCl₃ consecutively. The deposited buffer layers were investigated by atomic force microscopy and X-ray analysis. To examine the behavior of the buffer layers at main layer growth temperature, heat treatment was conducted at 900°C. Based on the results of the buffer layer study, GaN thick films were grown at 1050°C. Optimum deposition conditions of buffer layer from the buffer and main layer studies generally coincided. On the φ scanning pattern, the GaN films grown on (0001) Al₂O₃ were single-crystalline. Band-edge emission dominated photoluminescence was observed at room temperature.     

圆锥形零件冲压变形与成形载荷的分析

由于悬空侧壁部分的变形状态是圆锥形零件成形的关键，而径向拉应力是实现悬空部分成形的必要条件，同时也是该部分冲压成形成败的关键为此，经力学分析得出了侧壁部分径向拉应力的解析式和造成圆锥形零件破裂的最大径向拉应力的计算式。同时分析了圆锥形零件的成形载荷。     

基于ObjectAgent的小卫星星务系统研究与仿真

针对小卫星自主管理与自主决策的要求,简单介绍了多Agent技术和ObjectAgent开发环境,并以某小卫星为例,研究并设计了基于ObjectAgent的小卫星星务系统,给出了所涉及的Agent的自主决策、任务调度、信息交互等一系列问题的解决方案,最后,利用多台PC机组网进行了仿真,达到了预期的实验效果。     

试论入世对中国氧化铝工业的影响

随着中国加入WTO，给企业带来了发展的机会，也带来了挑战。本文通过对中国氧化铝工业的现状及其与世界水平的差距的分析，阐明了入世后随着关税等贸易壁垒的消除，国内、国际市场的竞争更加激烈。明确指出了我国氧化铝工业面临的多重挑战，以及给中国氧化铝工业带来的机遇。强调充分利用WTO给企业创设的权利，借入世东风，促进我国氧化铝工业快速发展，只有发展，中国氧化铝工业才有出路。     

塑钢包装箱材料贮存寿命预测

用热老化箱对4种塑钢包装箱用材进行了为期1个月的热老化试验，以材料的冲击强度作为判据指标，通过回归处理外推得到其常温下的贮存寿命预测评估结果。     

ZXJ10机IN业务功能扩展及实现

本文从智能网的基本概念入手,论述了利用 ZXJ10程控交换系统为发展智能网业务提供支持功能的技术策略以及分阶段实现的过程,并对各个阶段能够实现的业务作了简要介绍。     

SISAK快速化学分离装置的建立

SISAK(Short-lived Isotopes Studies by the AKUFVE technique)技术是目前使用最广泛的快速化学分离方法之一,主要应用在短寿命核素的分离和鉴别、超重元素的人工合成以及化学性质研究等方面的工作中.本文简单地叙述了SISAK技术的流程、原理和发展现状,介绍了自行建立的国内第一套基于SISAK技术的快速化学分离装置,并通过从裂变产物中分离短寿命核素这一实例验证了SISAK技术在快速化学分离中的优越性.     

浅谈如何更好地推行工程量清单计价规范

《建设工程工程量清单计价规范》的颁布实施,是工程建设领域的一件大事,为了更好的推行和施行计价规范,应做好多方面的工作。     

Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses

Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low V_d-stress and in high V_d-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low V_d-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress