Positive temperature dependence of the electron impact ionizationcoefficient in In0.53Ga0.47As/InP HBTs

Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient α_n in In_0.53Ga_0.47As at medium-low electric fields are reported for the first time. The increase of α_n with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In_0.53Ga _0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In_0.53Ga _0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current     

Van vleck paramagnetism of the diluted intermetallic compounds Pr1−x Y x Ni5 at fields up to 15 T

We have measured the 16 Hz susceptibility of the diluted Van Vleck paramagnets Pr_1−x Y _x Ni₅ withx=0.00, 0.05, 0.10. 0.20 at temperatures 1.5 K≤T≤50 K and magnetic fields up to 15T. Their Van Vleck type magnetic susceptibility χ(T, B, x) strongly depends on the field atB≥6 T. The temperatureT _max(B, x) of the maximum of χ(T, B, x) decreases at increasing the field from zero to 15 T by approximately one order of magnitude for all Pr_1−x Y _x Ni₅ compounds. Changing the dilutionx from zero to 0.20, the field whereT _max(B, x) strongly drops is increased from 9 T to 11 T. Our data agree qualitatively with the predictions of a point charge model which considers the Zeeman term in addition to the electronic exchange and the dominating crystal field contributions.     

Densification involved in the UV-based photosensitivity of silicaglasses and optical fibers

A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models     

A wafer level monitoring method for plasma-charging damage usingantenna PMOSFET test structure

A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices     

Modulation and Equalisation Considerations for High Performance Radio LANs

The European Telecommunications Standards Institute (ETSI) has recently defined a European standard for a high performance radio LAN (known as HIPERLAN). To operate as wired LAN replacements, these systems will operate at 5.2 GHz and support instantaneous bit rates of just under 24 Mb/s. To counteract the time dispersive nature of the indoor radio channel, the use of adaptive equalisation is suggested. In this paper a number of possible modulation and equalisation techniques are presented and, in particular, the Bit Error Rate (BER) performance of quasi-coherent GMSK combined with Decision Feedback Equalisation is explored through computer simulation. The trade off between symbol spaced and fractionally spaced equalisation is considered together with the importance of feedfoward and feedback synchronisation to the channel's power delay profile. The paper also includes a comparison of the RLS and LMS based training algorithms and compares the modem developed under the ESPRIT III LAURA project with that specified in HIPERLAN.The application of dual antenna diversity is investigated and its impact on the number of received error free data packets obtained as a function of signal leval and rms delay spread. The use of such diversity is shown to greatly improve the BER performance of a HIPERLAN modem. The problem of frequency offset is considered and modifications are proposed to the HIPERLAN frame structure to improve the receiver's tolerance to such errors. Important practical issues such as frame and symbol synchronisation, frequency offset correction and hardware implementation are discussed from both the LAURA and HIPERLAN viewpoint.     

A phenomenological model for giant magnetoresistance hysteresis inmagnetic discontinuous multilayer films

A simple phenomenological model for giant magnetoresistance (GMR) is employed for current and field parallel (CIP) to the magnetic multilayer planes in ordinary and discontinuous multilayer films. To our knowledge, it is the first model to include hysteresis in the field (H) dependence of the GMR. The computed GMR versus H curves qualitatively reproduce the GMR hysteresis seen experimentally. In particular, two GMR peaks are found to be symmetrically placed about H=0, and the GMR hysteresis curve itself is found to have an inverted butterfly shape. Also seen in the computed results is the general increase in GMR magnitude found for annealed discontinuous multilayer films. Various parameter variations are examined in the computed results. While the model reproduces GMR hysteresis quite well and the general increase in GMR for discontinuous multilayer films, it does not, in its present form, account for the oscillations seen in the GMR when the nonmagnetic layer thicknesses are varied, which is expected as a strictly quantum mechanical result     

Reduction of sodium-accelerated oxidation of silicon nitride ceramics by aluminium implantation

Norton NBD 200 silicon nitride ceramics were implanted with sodium to a dose of 7.0×10¹⁵cm^-2 at 72 keV (1 at% peak sodium content at 100 nm). The sodium-implanted samples were further implanted with aluminium to 7.3×10¹⁵cm^-2 at 87 keV (1 at% peak aluminium content at 100 nm). The implanted and unimplanted samples were oxidized in 1 atm dry oxygen at 1100 and 1300°C for 2–6 h. Profilometry and scanning electron microscopy measurements indicated that sodium implantation led to up to a two-fold increase in the oxidation rate of silicon nitride. The sodium effect was effectively neutralized when aluminium was co-implanted. The opposite effects of sodium and aluminium on the oxidation resistance of silicon nitride can be attributed to their different roles in modifying the structure and properties of the oxide formed. This revised version was published online in November 2006 with corrections to the Cover Date.     

The lattice dynamics of the Fe(tpa) (NCS)2 complex : light-induced excited spin state trapping effect

A light-induced excited spin state trapping (LIESST) experiment for a thermal gradual spin crossover complex, Fetris (2-pyridylmethyl) amine(NCS)2 or Fe(tpa) (NCS)2, was attempted for the first time. The high spin (HS) state after light inducement stayed metastable over a period of days without relaxation at 10 K. Intersystem relaxation from a high to a low spin (LS) complex occurred at 50 K after bleaching at 10 K. Investigation of the Mossbauer spectra of the LIESST and relaxation experiment indicated that the Debye–Waller factor was a correlation parameter of the HS fraction and that the co-operative effect played a role in the relaxation process for such a solid compound. This revised version was published online in November 2006 with corrections to the Cover Date.