V. Yeast sequencing reports. Identification of a gene encoding a new Ypt/Rab-like monomeric G-protein in Saccharomyces cerevisiae

A Saccharomyces cerevisiae sequence cloned by serendipity was found to encode a protein that is a new member of the Ypt/Rab monomeric G-protein family. This sequence shows high homology to the yeast genes SEC4 and YPT1 and, like SEC4 and YPT1, is essential for viability. The sequence was localized to chromosome V based upon hybridization to pulse-field gel-separated yeast chromosomes. The sequence has been deposited in the GenBank data library under Accession Number L17070.     

叶绿素衍生物─CPD_4在人血清中的激发和发射荧光谱

叶绿素衍生物４号（ＣＰＤ４）是一种新型中药光敏剂，本文研究了不同浓度的ＣＰＤ４分别在含１０％不同血型人血清的生理盐水中以及纯生理盐水中的激发和发射荧光光谱，并对结果进行了分析，结论对ＣＰＤ４在光动力诊断恶性肿瘤的临床应用具有一定的指导意义．     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Analysis of surface state effect on gate lag phenomena in GaAsMESFET's

A two-dimensional transient simulation of the gate lag phenomenon in GaAs MESFET's has been performed. Our results show that the charge exchanges in the population of the surface states at the ungated access region of FET's are responsible for this slow transient phenomenon. The measured “hole-trap-like” DLTS signal is directly related to the re-emission of the holes, trapped during the filling pulse. Higher gate pulse can cause more serious lag phenomenon due to larger modulation of surface charge density. Devices with shorter N⁺-gate spacing and lower surface state densities are shown to have less gate lag effect     

Tests of univariate and bivariate stochastic ageing

Concepts of ageing describe how a population of units or systems improves or deteriorates with age. Many classes of life distributions are categorized and defined in the literature according to their ageing properties. An important aspect of such classifications is that the exponential distribution is nearly always a member of each class. The notion of stochastic ageing is important in any reliability analysis, and many test statistics have been developed for testing exponentiality against various ageing alternatives. This paper is an overview of these developments. The author begins with a table of ageing classes together with key references, followed by a brief discussion on the characterization of exponentiality. Test procedures are summarized, and followed by the main review. Tests of exponentiality against other alternatives are explained for randomly censored data. Finally, tests of multivariate ageing properties are listed. Some of the life classes have been derived more recently and, as far as is known, no test statistics have been proposed. On the other hand, several tests are available for some classes. Relative efficiency of a test is discussed whenever appropriate     

Ultrahigh and controllable drain current peak-to-valley ratio innegative resistance field-effect transistors with a strained InGaAschannel

Negative resistance field-effect transistor (NERFET) devices using either strained InGaAs or unstrained GaAs channel layers have been fabricated. The strained InGaAs channel NERFET's show strong negative differential resistance and large drain current peak-to-valley ratio. The peak-to-valley ratio of the InGaAs channel NERFET is more than 3000 at room temperature and larger than one million (10⁶) at 77 K. The peak-to-valley ratio is controllable by adjusting the collector voltage     

不锈钢网架(壳)技术及其应用

本文总结了多年来不锈钢网架的研究成果 ,并介绍了部分不锈钢网架的工程应用     

学习新版建筑工程施工质量验收规范的体会

结合新版建筑工程施工质量验收规范的学习和施工实践 ,介绍了新版标准与旧标准的差异和特点 ,并就如何贯彻实施新标准、准确掌握检验批等问题作了分析 ,提出了执行中的相关注意事项。     

Filtres microondes en microruban suspendu

The authors present the design and the development of integrated microwave filters using suspended substrate microstrip, a technology that provides many advantages. Through quasi-static approximation the propagation structure has been treated using integral equations solved with the method of moments. Thanks to this tool of analysis and to an accurate synthesis method, a series of bandpass filters have been designed and manufactured. The results presented validate the accuracy of our design method.