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In this paper we study a class of CQ Horn functions introduced in Boros et al. (Ann Math Artif Intell 57(3–4):249–291, 2010). We prove that given a CQ Horn function f, the maximal number of pairwise disjoint essential sets of implicates of f equals the minimum number of clauses in a CNF representing f. In other words, we prove that the maximum number of pairwise disjoint essential sets of implicates of f constitutes a tight lower bound on the size (the number of clauses) of any CNF representation of f. 相似文献
33.
Katarzyna TyszczukAuthor Vitae 《Sensors and actuators. B, Chemical》2011,156(2):899-905
The properties of the lead film electrode designed for adsorptive stripping voltammetric measurements of organic compounds were examined by electrochemical and microscopic techniques. The effect of Pb(II) concentration, the influence of deposition potential and time of the lead film formation on the determination of bleomycin at an in situ lead-coated glassy carbon electrode have been studied. Atomic force microscopy (AFM) was used to characterize the Pb crystallite growth on the glassy carbon surface. The morphology of the deposits was evaluated and its influence on the bleomycin responses was discussed. 相似文献
34.
Recently, Wang et al. showed that two new verifier-free remote user password authentication schemes, Ku-Chen's scheme and Yoon et al.'s scheme, are vulnerable to an off-line password guessing attack, a forgery attack, and a denial-of-service attack, and then proposed an improved scheme for the real application in resource-limited environments. Unfortunately, we find that Wang et al.'s scheme is still vulnerable to an impersonation attack and an off-line password guessing attack. In addition, Wang et al.'s scheme is not easily reparable and is unable to provide perfect forward secrecy. Finally, we propose an improved scheme with better security strength. 相似文献
35.
Fan Zhang Robert Hager Seung-Hoe Ku Choong-Seock Chang Stephen C. Jardin Nathaniel M. Ferraro E. Seegyoung Seol Eisung Yoon Mark S. Shephard 《Engineering with Computers》2016,32(2):285-293
XGC1 and M3D-C 1 are two fusion plasma simulation codes being developed at Princeton Plasma Physics Laboratory. XGC1 uses the particle-in-cell method to simulate gyrokinetic neoclassical physics and turbulence (Chang et al. Phys Plasmas 16(5):056108, 2009; Ku et al. Nucl Fusion 49:115021, 2009; Admas et al. J Phys 180(1):012036, 2009). M3D-\(C^1\) solves the two-fluid resistive magnetohydrodynamic equations with the \(C^1\) finite elements (Jardin J comput phys 200(1):133–152, 2004; Jardin et al. J comput Phys 226(2):2146–2174, 2007; Ferraro and Jardin J comput Phys 228(20):7742–7770, 2009; Jardin J comput Phys 231(3):832–838, 2012; Jardin et al. Comput Sci Discov 5(1):014002, 2012; Ferraro et al. Sci Discov Adv Comput, 2012; Ferraro et al. International sherwood fusion theory conference, 2014). This paper presents the software tools and libraries that were combined to form the geometry and automatic meshing procedures for these codes. Specific consideration has been given to satisfy the mesh configuration and element shape quality constraints of XGC1 and M3D-\(C^1\). 相似文献
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Shao‐Ku Kao Hsiang‐Chi Cheng Jian‐Da Lin 《International Journal of Circuit Theory and Applications》2016,44(4):929-944
In conventional delay‐locked loop circuits, the charge and discharge of the charge pump result in mismatched current reflecting the size of the static phase error. The static phase error between feedback clock and reference clock is likely to be within tens or hundreds of picoseconds (ps). We thus propose an approach using digital calibration methods to reduce the charge pump current mismatch by means of the setup time of the D‐type flip flop. The setup time of D‐type flip flop is determined and duplicated to detect the phase error between the reference clock and feedback clock. It results in a very small static phase error between the reference clock and feedback clock. This paper used a 0.18 µm CMOS process design, with a reference frequency of 700 ~ 900 MHz. The active area is 0.031 mm2, and the phase error after correction is less than 5 ps. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
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Andrzej Taube Robert Mroczyński Katarzyna Korwin-Mikke Sylwia Gierałtowska Jan Szmidt Anna Piotrowska 《Materials Science and Engineering: B》2012,177(15):1281-1285
In this work, we report on effects of post-deposition annealing on electrical characteristics of metal–insulator–semiconductor (MIS) structures with HfO2/SiO2 double gate dielectric stacks. Obtained results have shown the deterioration of electro-physical properties of MIS structures, e.g. higher interface traps density in the middle of silicon forbidden band (Ditmb), as well as non-uniform distribution and decrease of breakdown voltage (Ubr) values, after annealing above 400 °C. Two potential hypothesis of such behavior were proposed: the formation of interfacial layer between hafnia and silicon dioxide and the increase of crystallinity of HfO2 due to the high temperature treatment. Furthermore, the analysis of conduction mechanisms in investigated stacks revealed Poole–Frenkel (P–F) tunneling at broad range of electric field intensity. 相似文献