RDMA技术在数据中心中的应用研究

随着云计算向数据化智能化的方向演进,数据的流转与有效利用将为业务带来核心价值。大规模深度学习、机器训练等应用是极其依赖算力的,大量的信息交互对网络提出了很高的要求,由此需要一个低时延、无丢包、高吞吐的算力网络。考察RDMA[1]技术在数据中心中的应用,并分析其对于未来云数据中心高性能集群计算的影响。     

Effects of annealing processes on Cu<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript> thin films

The Cu _x Si_1-x thin films have been grown by pulsed laser deposition (PLD) with in situ annealing on Si (001) and Si (111), respectively. The transformation of phase was detected by X-ray diffraction (XRD). The results showed that the as-deposited films were composed of Cu on both Si (001) and Si (111). The annealed thin films consisted of Cu + η”-Cu₃Si on Si (001) while Cu + η’-Cu₃Si on Si (111), respectively, at annealed temperature (T _a) = 300-600 °C. With the further increasing of T _a, at T _a= 700 °C, there was only one main phase, η”-Cu₃Si on Si (001) while η’-Cu₃Si on Si (111), respectively. The annealed thin films transformed from continuous dense structure to scattered-grain morphology with increasing T _a detected by field emission scanning electron microscope (FESEM). It was also showed that the grain size would enlarge with increasing annealing time (t _a).     

Morphology study of oriented SmBCO film deposited by MOCVD

c-axis-oriented SmBa_2Cu_3O_7(SmBCO) films have been deposited on(100)- LaA1O_3(LAO)substrate by metal organic chemical vapor deposition(MOCVD) technique.The effects of deposition temperature(T_(dep)) and total pressure(P_(tot)) on the orientation and microstructure of SmBCO films were investigated.The orientation of SmBCO films transformed from α-axis to c-axis with increasing of T_(dep) from 900 to 1 100℃.At T_(dep)=1 050℃,SmBCO films had c-axis orientation and tetragon surface.At P_(tot)~(dep)=400-800 Pa and T_(dep)=1 050 ℃,totally c-axis-oriented SmBCO films were obtained.The R_(dep) of SmBCO films increased firstly and then decreased with increasing P_(tot).The surface of SmBCO films exhibited tetragon morphology at 1 050 ℃ and400 Pa.Maximum thickness of SmBCO film deposited was 1.2μm at P_(tot)= 600 Pa,and the corresponding R_(dep)was 7.2 μm·h~(-1).     

An analytic study on the deflection of subway tunnel due to adjacent excavation of foundation pit

Predicting and estimating the response of subway tunnel to adjacent excavation of foundation pit is a research focus in the field of underground engineering. Based on the principle of two-stage method and incremental method, an analytic approach is suggested in this paper to solve this problem in an accurate and rapid way, and the upheavals of tunnel due to adjacent excavation are solved by analytic method. Besides, the presented method is used in the practical engineering case of Shenzhen Metro Line 11 and verified by numerical simulation and in situ measurement. Finally, a parametric analysis is performed to investigate the influence of different factors on tunnel’s deflection. Some useful conclusions have been drawn from the research as below: The deflection results of tunnel obtained from analytic method are nearly consistent with the results getting from numerical analysis and measured data, which verified the accuracy and rationality of presented method. The excavation size has a significant impact on both the displacement values and influenced range of tunnel. However, the relative distance only impacts the displacement values of tunnel, but not the influenced range of tunnel. It may provide certain reference to analyze the deflection of subway tunnel influenced by adjacent excavation.

     

Annealing effects on the structure and hardness of helium-irradiated Cr2AlC thin films

Cr₂AlC MAX phase thin films prepared by radio-frequency magnetron sputtering were irradiated at room temperature by 100 keV helium ions to a fluence of 1 × 10¹⁷ ions cm⁻². The effects of thermal annealing on the structural and mechanical properties of the helium-irradiated Cr₂AlC films as well as the helium release were investigated by grazing-incidence X-ray diffraction (GIXRD), Raman spectroscopy, and scanning electron microscope (SEM) in combination with nano-indentation and elastic recoil detection (ERD) analysis. The irradiation-induced structural damage in the Cr₂AlC is significantly recovered by thermal annealing at temperatures around 600℃, attributed to high defect diffusivity. After annealing to 750℃, the hardness of irradiated films recovered almost completely, which is ascribes to both defect recombination and reformation of damaged chemical bonds. Substantial helium release occurring at this annealing temperature is closely related to the damage recovery due to helium irradiation.     

Theoretical study on composition-dependent properties of ZnO·nAl2O3 spinels. Part II: Mechanical and thermophysical

Knowledge on the mechanical and thermophysical properties of ZnO·nAl₂O₃ is essential for practical applications. Based on the first-principles calculations and the bond valence method, the disordered spinel-type structure of ZnO·nAl₂O₃ (n = 1–4) was constructed to investigate the composition-dependent mechanical and thermophysical properties. The effects of cation substitution on the hardness, elastic modulus, thermal expansion, and thermal conductivity were revealed from the insights into the chemical bonds. At a higher n, the tetrahedral bond is stronger, manifested as its higher hardness and bulk modulus as well as smaller thermal expansion coefficient. Meanwhile, the octahedral bond is weaker, leading to the lower hardness and bulk modulus, along with the larger expansion coefficient. In consequence, the hardness and elastic moduli of ZnO·nAl₂O₃ are improved moderately while the expansion coefficient is decreased with the rise of n. Due to the different vibration characteristics of Zn^IV and Al^IV, the cation disorder in the 8a site provides the primary source of phonon scattering, resulting in the dramatic reduction of thermal conductivity as n increases. The understanding offers guidance on the application-oriented design of new oxide spinels.     

高阻相对La2／3Ca1／3MnO3低场磁电阻效应的影响

实验研究了La2／3Ca1/3MnO3系统晶界上掺杂(YSZ)对其输运性能和磁电阻效应(MR)的影响。样品是由溶胶．凝胶法制成的。通过对样品的电输运特性的测量表明,在掺杂量(x)低于2％时,掺杂引起电阻的增大并降低了金属．绝缘体转变温度;当掺杂量高于2％时电阻逐渐减小,且转变温度增加。而低场磁电阻效应随掺杂量增加,在x=1％时达到最大。     

Di对Mg-10Al合金显微组织与力学性能的影响

研究了Di加入量为1％～3％（质量分数，下同）[Nd—Pr混合稀土金属，w（Nd）：w（Pr）=3：1]的Mg-10Al合金的显微组织和力学性能。通过显微组织分析发现Di加入Mg-10Al合金后，析出了块状的Al2（Nd，Pr）相及杆状的Al11（Nd，Pr）3相，合金组织得到细化。Di的加入使铸态的Mg-10Al合金的力学性能提高，在Di的加入量为2％时，块状的Al2（Nd，Pr）相占主导地位，合金的抗拉强度和伸长率都达到峰值。在Di的加入量达到3％时，杆状的Al11（Nd，Pr），相增加，抗拉强度、尤其是伸长率有所降低。     

Mn对Fe_3Al合金室温力学性能的影响

Ｍｎ对Ｆｅ_３Ａｌ合金室温力学性能的影响楼白杨，刘茂森，毛志远，涂江平，肖延龄，钟映宏（浙江大学）Ｆｅ３Ａｌ金属间化合物具有抗氧化耐腐蚀性良、比强度高和成本低等特点［１，２］，从而具有可观的工程应用前景。对这种材料目前国内研究的热点之一是改善其室温塑?..