Pre-annealing induced oxide barrier to suppress the over-selenization of Mo contact

Molybdenum (Mo) is commonly used as the back contact material complying well with the formation of an ohmic contact for chalcogenide thin film solar cells. However, the easy formation of an over-thick MoSe₂ layer between the Cu₂ZnSn(S,Se)₄ absorber and Mo back contact significantly deteriorates the device performance. To overcome the degradation, the effects of thermal treatment on Mo layers have been investigated in this paper. It was found that pre-annealing Mo back contacts is effective to control the growth of interfacial MoSe₂ layer during selenization. Moreover, the thickness of MoSe₂ layer could be conveniently tailored by simply varying the pre-annealing temperature. The work provides direct proof that the appearance of a thin MoO₂ layer on the top of annealed Mo film indeed acts as a temporary barrier to block the over-selenization of Mo back contact.     

Comparison of gas sensing properties based on hollow and porous α-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanotubes

Hollow and porous α-Fe₂O₃ nanotubes were successfully synthesized by single nozzle electrospinning method followed by annealing treatment. The crystal structures and morphologies of the as-prepared materials were characterized by X-ray diffraction and scanning electron microscopy, respectively. The as-prepared materials were applied to construct gas sensor devices which gas sensing properties were further investigated. The obtained results revealed that porous α-Fe₂O₃ nanotube gas sensors exhibit a markedly enhanced gas sensing performance compared with hollow α-Fe₂O₃ nanotube gas sensors, which was about three times higher to 100 ppm acetone at 240 °C. Interestingly, hollow and porous α-Fe₂O₃ nanotube gas sensors both showed fast response–recovery time and good selectivity, but the porous ones possessed the shorter recovery time. The improved properties could be attributed to the unique morphology of porous nanotubes. Thus, further improvement of performance in metal-oxide-semiconductors materials could be realized by preparation the unique porous structures of nanotubes. Moreover, it is expected that porous metal-oxide-semiconductors nanotubes could be further design as promising candidates for gas sensing materials.     

3D成型SiO_2/PVA水凝胶支架的摩擦行为

利用3D成型技术,通过先成型后冷冻交联2步法制备不同孔隙率的SiO_2/聚乙烯醇(PVA)水凝胶支架,研究了SiO_2/PVA水凝胶支架的重复摩擦行为,分析了SiO_2/PVA水凝胶支架的摩擦原理。结果表明:SiO_2/PVA水凝胶支架能够保持三维贯通的立体结构,最大孔隙率可达42.3%。低摩擦速率(10-6~10-3 m/s)下,SiO_2/PVA水凝胶支架摩擦力稍高于块体SiO_2/PVA水凝胶,且随孔隙率的提高而稍有降低;而高摩擦速率(10-2~1m/s)下,SiO_2/PVA水凝胶支架和块体SiO_2/PVA水凝胶的摩擦力相近,孔隙率对支架摩擦力影响不明显。低正压力载荷(0.3kPa)下,SiO_2/PVA水凝胶支架重复摩擦性优于块体SiO_2/PVA水凝胶,这与支架结构能保持稳定的水润滑层相关。     

纳米RDX基PBX混合炸药的热分解特性和感度研究?

采用溶液-水悬浮法,通过控制料液质量比、包覆温度、搅拌速度等工艺参数制备了纳米RDX基PBX。使用TG/DSC同步热分析仪研究其热分解特性,并依据GJB 772A—1997分别对其撞击感度和摩擦感度进行了测试。结果表明:与微米RDX基PBX相比,纳米RDX基PBX的DTG峰温提前约0.6℃,活化能降低约2.5 k J/mol;纳米RDX基PBX撞击感度H_(50)为46.3 cm,微米RDX基PBX H_(50)为29.8 cm,相对降低55.4%;纳米RDX基PBX摩擦感度比微米RDX基PBX相对降低21.1%。