全文获取类型
收费全文 | 44507篇 |
免费 | 13187篇 |
国内免费 | 20篇 |
学科分类
工业技术 | 57714篇 |
出版年
2024年 | 7篇 |
2023年 | 94篇 |
2022年 | 135篇 |
2021年 | 425篇 |
2020年 | 1536篇 |
2019年 | 3268篇 |
2018年 | 3250篇 |
2017年 | 3557篇 |
2016年 | 4037篇 |
2015年 | 4082篇 |
2014年 | 4087篇 |
2013年 | 5297篇 |
2012年 | 3053篇 |
2011年 | 2789篇 |
2010年 | 2915篇 |
2009年 | 2809篇 |
2008年 | 2327篇 |
2007年 | 2099篇 |
2006年 | 1893篇 |
2005年 | 1545篇 |
2004年 | 1516篇 |
2003年 | 1459篇 |
2002年 | 1384篇 |
2001年 | 1224篇 |
2000年 | 1163篇 |
1999年 | 573篇 |
1998年 | 257篇 |
1997年 | 193篇 |
1996年 | 102篇 |
1995年 | 108篇 |
1994年 | 87篇 |
1993年 | 76篇 |
1992年 | 56篇 |
1991年 | 55篇 |
1990年 | 41篇 |
1989年 | 29篇 |
1988年 | 16篇 |
1987年 | 25篇 |
1986年 | 27篇 |
1985年 | 19篇 |
1984年 | 22篇 |
1983年 | 16篇 |
1982年 | 6篇 |
1981年 | 5篇 |
1980年 | 7篇 |
1979年 | 7篇 |
1978年 | 4篇 |
1977年 | 7篇 |
1976年 | 12篇 |
1975年 | 4篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
101.
New polyaniline (PANI) asymmetric membranes were fabricated using a phase‐inversion technique with hexane as the coagulation bath. These membranes exhibit a dense structure with macrovoids distributed asymmetrically throughout the cross‐section. A stress–strain study demonstrated that the Young's modulus (1.421 GPa) and strain at break (7.6 %) of the new PANI asymmetric membranes prepared from hexane are approximately 12 and 4 times higher, respectively, than the values reported previously for the PANI integrally skinned asymmetric membranes (ISAMs) (123 MPa Young's modulus and 1.8 % strain at break). Furthermore, monolithic electrochemical actuators based on a single PANI asymmetric membrane were constructed, and a bending movement of up to 20 Hz was experimentally recorded in a hydrochloric acid aqueous solution. A lifetime of over 329 500 cycles was determined for these actuators at a ± 2° angular displacement (5 Hz). The lifetime is limited by a bending fatigue that creates a transversal crack on the PANI membrane at the air–water interface. Control over the actuator movement is also manifested by the linear dependences of the bending angle on the charge and of the angular velocity on the current. These relationships are independent of both the kind of applied electric signal and the frequency used. 相似文献
102.
103.
A MOSFET structure with a nonoverlapped source/drain (S/D) to gate region was proposed to overcome the challenges in sub-50-nm CMOS devices. Key device characteristics were investigated by extensive simulation study. Fringing gate electric field through the spacer induces an inversion layer in the nonoverlap region to act as an extended S/D region. An oxide spacer is used to reduce parasitic gate overlap capacitance. A reasonable amount of inversion electrons were induced under the spacers. Internal physics, speed characteristics, short channel effects, and RF characteristics were studied with the nonoverlap distance at a fixed metallurgical channel length of 40 nm. The proposed structure had good drain-induced barrier lowering and V/sub T/ rolloff characteristics and showed reasonable intrinsic gate delay and cutoff frequency compared to those of an overlapped structure. 相似文献
104.
J. Gegner Priv.‐Doz. Dr. W. Nierlich M. Brückner 《Materialwissenschaft und Werkstofftechnik》2007,38(8):613-623
Due to clearly distinguishable damage symptoms, it is differentiated between the surface and sub‐surface failure mode of rolling bearings. Material states red out by X‐ray diffraction (XRD) residual stress measurements point to a variety of loading conditions especially at raceway surfaces that are associated with several competing failure mechanisms. The corresponding lifetime reduction can range from the lower fatigue strength region to material ratcheting in extreme cases. Relevant position of the microstructural changes and nature of the failure mechanisms are characterized. The time alteration of the XRD material parameters measured at or near the surface and at the depth of the maximum equivalent stress correlates, in a different manner, with the statistical parameter of the 10 % bearing life. Both failure modes are illustrated by concrete examples. Contaminated lubricant and boundary lubrication, which represent practically important surface‐induced failures, are discussed in more detail. Gray staining, i.e. shallow pitting, often occurs without distinct indication of global material aging by means of XRD characteristics. Here, scanning electron microscopy observations and electron microprobe analyses point to corrosion fatigue as acting surface failure mechanism. The interaction between material and lubricant under complex loading regimes particularly of mixed friction and corrosion opens further failure research areas in the field of tribology. 相似文献
105.
Chia‐Yin Chen Yu‐Chi Cheng Shau‐Wei Tsai 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》2002,77(6):699-705
A lipase‐catalyzed enantioselective hydrolysis process under in situ racemization of the remaining (R)‐thioetser substrate with trioctylamine as the catalyst was developed for the production of (S)‐fenoprofen from (R,S)‐fenoprofen 2,2,2‐trifluoroethyl thioester in isooctane. Detailed investigations of trioctylamine concentration on the enzyme activation and the kinetic behavior of the thioester in racemization and enzymatic reactions were conducted, in which good agreement between the experimental data and theoretical results was observed. © 2002 Society of Chemical Industry 相似文献
106.
A logic language is suitable for specification if it is equipped with features for data abstraction and modularization. In this paper, an effective mechanism to incorporate function and type into logic programming is presented as the means to embed data abstraction mechanism into logic programming. This incorporation is essentially based on Horn clause logic with equality and a polymorphic type system that is an extension of Mycroft and O’Keefe’s system. This paper also presents an implementation based on Warren Abstract Machine (WAM) and shows the performance, along with a comparison with WAM. 相似文献
107.
A series of polyurethane block copolymers based on hydroxy-terminated polydimethylsiloxane and poly(propylene glycol) soft segments of molecular weights 1818 and 2000, respectively, were synthesized. The hard segments consisted of 4,4′-diphenylnethane diisocyanate and 1,4-butanediol as the chain extender. Samples with different molar ratios were prepared. We tried to synthesize polydimethylsiloxane-based polyurethanes (PDMS-PU) containing a hard block as major fraction and a soft block as minor fraction for preparing toughened rigid systems. After a study of the pure polydimethylsiloxane-based polyurethane and poly(propylene glycol)-based polyurethane (PPG-PU), (mixed polyol)-based block copolymers and blends of PDMS-PU and PPG-PU were synthesized, and characterized by means of differential scanning calorimetry, tensile testing and scanning electron microscopy. In (mixed polyol)-based copolymers and lower hard-segment content blends, macro-phase separation occurred, but blends with higher hard-segment contents showed significant reduction in amounts of phase separation. 相似文献
108.
In this paper, we propose queueing strategies employing the service interval-based priority (sip) which can provide delay-bounded, and loss-free services, while maximizing bandwidth utilization in the atm network. We also describe a variation of the sip, the residual service interval-based priority (rsip) which can achieve almost full utilization by assigning priorities dynamically on the basis of the residual service interval. We store the realtime cells belonging to different connections in logically separated queues, and for each queue, we set a parameter called service interval, during which only one cell is allowed to be transmitted. The sip server takes and transmits the head-of-line (hol) cell of the queue which has the smallest service interval, while the rsip server selects the queue with the smallest residual service interval. When there is no eligible real-time cell, it transmits non-real-time cell, thus enabling a maximized bandwidth utilization. Employing the above queueing strategies, we analyze the delay characteristics deterministically with the leaky bucket bounded input traffic and then dimension the optimal service interval. In dimensioning the service interval and buffer space of each real-time service queue, we consider burstiness of traffic in conjunction with delay constraints, so that bandwidth utilization can get maximized. In addition, we consider the issues of protection from malicious users, average bandwidth utilization, and coupling between the delay bound and the bandwidth allocation granularity. 相似文献
109.
A simple amplitude shift keying (ASK) optical link is demonstrated by using a low-cost self-pulsating laser diode and an envelope detector for a low-cost broadband local area network. A link sensitivity of -22 dBm was achieved at 200 Mbit/s. Because the self-pulsation frequency can be tuned by the bias current, frequency division multiplexing can be simply implemented for multiuser applications 相似文献
110.
J. Shin Y. Hsu T. C. Hsu G. B. Stringfellow R. W. Gedridge 《Journal of Electronic Materials》1995,24(11):1563-1569
GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using
the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium
(TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III
ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb.
In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the
TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at
temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga1-xInxSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of
graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between
1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging
from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of
graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak
energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all
p-type with carrier concentrations of approximately 1017 cm3. Transmission electron diffraction studies indicate that the Ga0.5In0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This
is the first report of ordering in GalnSb alloys. 相似文献