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J. C. Jones H. Rahmati T. D. H. Do 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》1992,54(4):317-318
Wood shaving samples were heated in both cubic baskets and in a previously described system realising the conditions of the ‘infinite slab’ in thermal ignition. Results from the two sets of experiment were found to be totally consistent with each other. 相似文献
14.
HA Mook DM Paul BC Sales LA Boatner L Cussen 《Canadian Metallurgical Quarterly》1988,38(16):12008-12010
15.
Kum‐Il Lee Yong‐Sik Yim Sang‐Wook Chung Jiaqiu Wei Jong Il Rhee 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》2005,80(9):1036-1045
A two‐dimensional (2D) spectrofluorometer was used to monitor various fermentation processes with recombinant E coli for the production of 5‐aminolevulinic acid (ALA). The whole fluorescence spectral data obtained during a process were analyzed using artificial neural networks, ie self‐organizing map (SOM) and feedforward backpropagation neural network (BPNN). The SOM‐based classification of the whole spectral data has made it possible to qualitatively associate some process parameters with the normalized weights and variances, and to select some useful combinations of excitation and emission wavelengths. Based on the classified fluorescence spectra a supervised BPNN algorithm was used to predict some of the process parameters. It was also shown that the BPNN models could elucidate some sections of the process's performance, eg forecasting the process's performance. Copyright © 2005 Society of Chemical Industry 相似文献
16.
Do Hoon Kim Umme Farva Woo Sik Jung Eui Jung Kim Chinho Park 《Korean Journal of Chemical Engineering》2008,25(5):1184-1189
This paper reports an alternative method for the growth of GaN epitaxial layer on (0001) Al2O3 substrate by hot-wall vapor phase epitaxy technique. Tris (N,N-dimethyldithiocarbamato)-gallium (III), Ga(mDTC)3 was introduced as a precursor material for the seed layer formation in the growth of GaN. Optimal growth conditions with
seed layers formed by the Ga(mDTC)3 concentration of 0.047 mol/L were identified: Growth temperature was found to be 850 °C, and optimal distance between the
reactant outlet and substrate was determined to be 12.5 cm. Characterization results showed that this growth method produce
high-crystallinity GaN epitaxial layers at a relatively lower growth temperature compared to the existing growth techniques
and simplify the growth process. 相似文献
17.
S. Nourbakhsh W. H. Rhee O. Sahin H. Margolin 《Metallurgical and Materials Transactions A》1994,25(7):1501-1507
A series of single-crystal Al2O3-fiber-reinforced Ni3Al-based intermetallic matrix composites were fabricated by pressure casting. The matrices employed were
binary Ni3Al, Ni3Al-0.5 at. pct Cr, and Ni3Al-0.34 at. pct Zr. The development of microstructure upon oxidation in air at either 1100 °C or 1200 °C was investigated
by optical, scanning, and transmission electron microscopy. In air-oxidized binary Ni3Al, some of the fibers were fully or partially covered with a layer of oxide. A weak fiber/matrix bond in this system, which
led to fiber debonding during composite processing, is believed to be responsible for the ingress of O into the composite
and oxidation of the matrix in the debonded regions at the fiber/matrix interface. Addition of Cr to Ni3Al resulted in an almost threefold increase in fiber/matrix bond strength. No oxidation of the interface was observed. A thick
layer of oxide was formed around all the fibers when the composite was thermally cycled prior to isothermal annealing. Addition
of Zr to Ni3Al resulted in the formation of a layer of ZrO2 on the surface of the fibers during composite processing. The ZrO2 layer provided a fast path for the diffusion of O, which led to the formation of a rootlike oxide structure around the fibers.
The rootlike structure consisted of a network of Al2O3-covered ZrO2. 相似文献
18.
Shi-Woo Rhee 《Korean Journal of Chemical Engineering》1995,12(1):1-11
Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition
process for Al has been actively investigated for the application in ultra large scale integration. In this review, various
precursors, mainly alkyl aluminum and alane compounds, and reaction mechanisms of these precursors in Al CVI) are described.
Epitaxial growth and selectivity of the deposition are also discussed. In addition to thermal reactions, plasma and photochemical
reactions are also briefly described. 相似文献
19.
Numerical prediction of the wind flow and pollutant dispersion over two-dimensional hilly terrain is presented. The wind tunnel
experiments are conducted to validate the numerical results of the flow field. Measured mean velocity profiles, turbulence
characteristics, and surface pressure distributions show good agreement with the numerical predictions. The hypothesis of
Reynolds number independency for an atmospheric boundary layer flow over aerodynamically rough terrain is numerically confirmed.
The linear theory provides generally good prediction of speed-up characteristics for gently sloped low hills. The effect of
two-dimensional double hills on the dispersion of pollutants from continuously or temporally released line source of different
emission heights and locations is also investigated. The ground-level concentrations are considerably reduced as emission
heights are increased. The variances of ground-level concentration with respect to time from a temporally released source
are strongly influenced by the flow separation. 相似文献
20.
Thermal properties and crystalline structure of liquid crystalline (LC) poly(ethylene terephthalate‐co‐2(3)‐chloro‐1,4‐phenylene terephthalate) [copoly(ET/CPT)] were investigated using differential scanning calorimetry (DSC), thermogravimetry (TGA), limiting oxygen index (LOI) measurement, electron dispersive X‐ray analysis (EDX), X‐ray diffractometry, and infrared spectrometry (IR). The thermal transition temperatures of copoly(ET/CPT) were changed with the composition. Copoly(ET/CPT) showed two thermal decomposition steps and the residues at 700°C and LOI values of copoly(ET/CPT) were almost proportional to its chlorine content. The activation energy of thermal decomposition of LC units was very low compared to that of poly(ethylene terephthalate)(PET) units. Crystal structure of copoly(ET/CPT) (20/80) was of triclinic system with the lattice constants of a = 9.98 A?, b = 8.78 A?, c = 12.93 A?, α = 97.4°, β = 96.1°, and γ = 90.8°, which is very close to that of poly(chloro‐p‐phenylene terephthlate) (PCPT) with the lattice constants of a = 9.51 A?, b = 8.61 A?, c = 12.73 A?, α = 96.8°, β = 95.4°, and γ = 90.8°. When copoly(ET/CPT)(50/50) was annealed at 220°C in vacuum, crystallization induced sequential reordering (CISR) was not observed but the heat of fusion was slightly increased due to the increase of the trans isomer content in PET units. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 84: 1286–1294, 2002; DOI 10.1002/app.10451 相似文献