Moving Least-Squares Differential Quadrature Method for Free Vibration of Antisymmetric Laminates

In this paper, the moving least-squares differential quadrature (MLSDQ) method is employed for free vibration of thick antisymmetric laminates based on the first-order shear deformation theory. The generalized displacements of the laminates are independently approximated with the centered moving least-squares (MLS) technique within each domain of influence. The MLS nodal shape functions and their partial derivatives are computed quickly through back-substitutions after only one LU decomposition. Subsequently, the weighting coefficients in the MLSDQ discretization are determined with the nodal partial derivatives of the MLS shape functions. The MLSDQ method combines the merits of both the differential quadrature and meshless methods which can be conveniently applied to complex domains and irregular discretizations without loss of implementation efficiency and numerical accuracy. The natural frequencies of the laminates with various edge conditions, ply angles, and shapes are calculated and compared with the existing solutions to study the numerical accuracy and stability of the MLSDQ method. Effects of support size, order of completeness of basis functions, and node irregularity on the numerical accuracy are investigated in detail.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

毗邻铁路大动脉排架式厂房拆除爆破

文章介绍了运煤车间爆破拆除工程的设计、施工经过及防后座的措施，对于复杂爆破环境的建筑物拆除有一定参考意义。     

地杂波O．94μm激光后向反射率测试研究

通过对地杂波O．94μm激光后向反射率的测试，获取不同入射角的多背景后向反射率测试数据。通过对测试数据的分析处理提供特征信息，为激光探浏器设计提供依据。     

低温脂肪酶产生菌的筛选、鉴定及其部分酶学性质

从南极乔治王岛冻土来源的76株低温细菌中筛选到13株低温脂肪酶产生菌，对其中的BTsl0022菌株进行鉴定。通过生理生化特征、16s rDNA基因序列的同源性和系统发育分析发现，菌株RTsl0022属于假单胞菌属(Pseudomonas)，但与已定名的假单胞菌有一定的差异，与未定名的Pseudomonas sp．PsB的亲缘关系最接近，故将其暂定名为Pseudomonas sp．BTsl0022。对该菌脂肪酶的酶学性质初步研究表明，酶的最适作用温度为24℃，对热敏感，60℃处理30min仅残留25％酶活性，酶的适宜作用pH范围在7．0～9．0，最适pH为8．0。     

PetroChina Drills Risk Exploration Wells in Africa

China National Oil Development Corporation （CNODC）, one of the subsidiaries under PetroChina responsible for the overseas oil exploration and development business, started to drill its first exploration well - Saha-1 on Tenere Block in Niger on October 30. This is another risk exploration well CNODC has drilled in this region following Bel E-I drilled on Block 350 in Algeria on September 15 and Heron-1 drilled on Block 20 in Mauritania on October 13. The drilling of those wells indicates a substantial stage of PetroChina＇s overseas large-scale risk oil and gas exploration in the Central and Northern Africa.     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

用CMOS工艺实现VSR光电集成接收机的途径

介绍了10Gbit／s速率的甚短距离光传输系统VSR(Very Short Reach)中的接收机。分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。提出用CMOS电路实现VSR光电集成(OEIC)接收机的可能性和实现方法。