DUV-induced micro and nanopatterning of polymer plasma deposited films

A simple method is described for patterning polymer surfaces with reactive groups. This entails pulsed plasma deposition of anhydride functionalized films, followed by DUV irradiation using a ArF excimer laser. Micro and nano-scale patterning was demonstrated, leading to well defined structures with controlled chemistry and/or geometries. We investigated the chemical changes induced by DUV irradiation. Among other parameters, we demonstrated that the covalent attachment of an amine terminated nucleophile via the aminolysis improved significantly the DUV photosensitivity. Using this approach it was possible to create combinatorial patterned surfaces. In particular such patterned polymer films appear as excellent candidate to study the effect of nanostructuration on the development of biofilms.     

On the reduction of thermal and flicker noise in ENG signal recording amplifiers

Because of the extremely low amplitude of the input signal, the design of electro-neuro-graph (ENG) amplifiers involves a special care for flicker and thermal noise reduction. The task becomes really challenging in the case of implantable electronics, because power consumption is restricted to few hundreds μW. In this work, two different circuit techniques aimed to reduce flicker and thermal noise, in ultra-low noise amplifiers for implantable medical devices, are demonstrated. The circuit design, and measurement results are presented, in both cases showing an excellent performance, and noise to power consumption trade-off. In the first circuit, a very simple low-pass G_m–C chopper amplifier is used for flicker noise cancellation. It consumes only 28 mW, with a measured input referred noise and offset of 2  $ {{{\text{nV}}} \mathord{\left/ {\vphantom {{{\text{nV}}} {\sqrt {{\text{Hz}}} }}} \right. \kern-0em} {\sqrt {{\text{Hz}}} }} $ , and 2.5 μV, respectively. In the second circuit, a ultra-low noise amplifier, a energy-efficient DC–DC down-converter, and low voltage design techniques are combined, for the reduction of thermal noise with a minimum power consumption. Measured input referred noise in this case was 5.5  $ {{{\text{nV}}} \mathord{\left/ {\vphantom {{{\text{nV}}} {\sqrt {{\text{Hz}}} }}} \right. \kern-0em} {\sqrt {{\text{Hz}}} }} $ at only 380 μW power consumption. Both circuits were fabricated in a 1.5 μm technology.     

Composite short-side-chain PFSA electrolyte membranes containing selectively modified halloysite nanotubes (HNTs)

Aquivion membrane displays improved properties as compared to Nafion membrane, partly due to shorter side chains. However, some improvements are still necessary for proton exchange membrane fuel cell to operate at low relative humidity. To overcome this drawback, the addition of clay nanoparticle into the Aquivion matrix can be considered. In this study, different composite membranes have been prepared mixing short-side-chain PFSA (perfluorosulfonic acid) Aquivion and selectively modified halloysite nanotubes for PEMFC low relative humidity operation. Halloysites were grafted with fluorinated groups, sulfonated groups, or perfluoro-sulfonated groups on inner or outer surface of the tubes. The obtained composite membranes showed improved properties, especially higher water uptake associated with reduced swelling and better mechanical strength compared to pristine Aquivion membrane and commercially available Nafion HP used as reference. The best performance in this study was obtained with Aquivion loaded with 5 wt% of pretreated perfluoro-sulfonated halloysite. The composite membrane, referred to as Aq/pHNT-SF5, displayed the largest water uptake and proton conductivity among the panel of membranes tested. The chemical stability was not affected by the presence of halloysite in the Aquivion matrix.

Graphical abstract

     

A (Triphenylphosphine)Silver (I) Complex as a New Performance Additive in Free‐Radical Photopolymerization under Air

Unusual photochemical properties of an Ag(I)‐derived complex, i.e., bis[(µ‐chloro)bis(triphenylphosphine)silver (I)] ([Ag](PPh₃)) are demonstrated when used in free‐radical photopolymerization reactions: i) [Ag](PPh₃) can act as an innovative photoinitiating system when associated with a commercial type I photoinitiator 2,2‐dimethoxy‐2‐phenylacetophenone to overcome the oxygen inhibition effect during the free‐radical photopolymerization of acrylate monomers, thus accelerating the kinetics of polymerization under air; ii) silver‐based nanoparticles can be in situ generated under air, thus leading to new antibacterial coatings which prevent the growth of Escherichia coli and Staphylococcus aureus after few hours of incubation.     

Sputtered Titanium Carbide Thick Film for High Areal Energy on Chip Carbon‐Based Micro‐Supercapacitors

The areal energy density of on‐chip micro‐supercapacitors should be improved in order to obtain autonomous smart miniaturized sensors. To reach this goal, high surface capacitance electrode (>100 mF cm^?2) has to be produced while keeping low the footprint area. For carbide‐derived carbon (CDC) micro‐supercapacitors, the properties of the metal carbide precursor have to be fine‐tuned to fabricate thick electrodes. The ad‐atoms diffusion process and atomic peening effect occurring during the titanium carbide sputtering process are shown to be the key parameters to produce low stress, highly conductive, and thick TiC films. The sputtered TiC at 10^?3 mbar exhibits a high stress level, limiting the thickness of the TiC‐CDC electrode to 1.5 µm with an areal capacitance that is less than 55 mF cm^?2 in aqueous electrolyte. The pressure increase up to 10^?2 mbar induces a clear reduction of the stress level while the layer thickness increases without any degradation of the TiC electronic conductivity. The volumetric capacitance of the TiC‐CDC electrodes is equal to 350 F cm^?3 regardless of the level of pressure. High values of areal capacitance (>100 mF cm^?2) are achieved, whereas the TiC layer is relatively thick, which paves the way toward high‐performance micro‐supercapacitors.     

Strain control and spontaneous phase ordering in vertical nanocomposite heteroepitaxial thin films

Two-phase, vertical nanocomposite heteroepitaxial films hold great promise for (multi)functional device applications. In order to achieve practical devices, a number of hurdles need to be overcome, including the creation of ordered structures (and their formation on a large scale), achieving different combinations of materials and control of strain coupling between the phases. Here we demonstrate major advances on all these fronts: remarkable spontaneously ordered structures were produced in newly predicted compositions, vertical strain was proven to dominate the strain state in films above 20 nm thickness and strain manipulation was demonstrated by selection of phases with the appropriate elastic moduli. The work opens up a new avenue for strain control in relatively thick films and also promises new forms of ordered nanostructures for multifunctional applications.     

Improving accuracy in detecting acoustic onsets.

In current cognitive psychology, naming latencies are commonly measured by electronic voice keys that detect when sound exceeds a certain amplitude threshold. However, recent research (e.g., K. Rastle & M. H. Davis, 2002) has shown that these devices are particularly inaccurate in precisely detecting acoustic onsets. In this article, the authors discuss the various problems and solutions that have been put forward with respect to this issue and show that classical voice keys may trigger several tens of milliseconds later than acoustic onset. The authors argue that a solution to this problem may come from voice keys that use a combination of analogue and digital noise (nonspeech sound) detection. It is shown that the acoustic onsets detected by such a device are only a few milliseconds delayed and correlate highly (up to .99) with reaction time values obtained by visual waveform inspection. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

An Effective Power-Aware At-Speed Test Methodology for IP Qualification and Characterization

Advanced nanometer technologies have led to a drastic increase in operational frequencies resulting in the performance of circuits becoming increasingly vulnerable to timing variations. The increasing process spread in advanced nanometer nodes poses considerable challenges in predicting post-fabrication silicon performance from timing models. Thus, there is a great need to qualify basic building structures on silicon in terms of critical parameters before they could be integrated within a complex System-on-Chip (SoC). The work of this paper presents a configurable circuit and an associated power-aware at-speed test methodology for the purpose of qualifying basic standard cells and complex IP structures to detect the presence of timing faults. Our design has been embedded within test-chips used for the development of the 28 nm Fully Depleted Silicon On Insulator (FD-SOI) technology node. The relevant silicon results and analysis validate the proposed power-aware test methodology for qualification and characterization of IPs and provide deeper insights for process improvements.     

Analysis and Test of Resistive-Open Defects in SRAM Pre-Charge Circuits

In this paper, we present an exhaustive study on the influence of resistive-open defects in pre-charge circuits of SRAM memories. In SRAM memories, the pre-charge circuits operate the pre-charge and equalization at a certain voltage level, in general Vdd, of all the couples of bit lines of the memory array. This action is essential in order to ensure correct read operations. We have analyzed the impact of resistive-opens placed in different locations of these circuits. Each defect studied in this paper disturbs the pre-charge circuit in a different way and for different resistive ranges, but the produced effect on the normal memory action is always the perturbation of the read operations. This faulty behavior can be modeled by Un-Restored Write Faults (URWFs) and Un-Restored Read Faults (URRFs), because there is an incorrect pre-charge/equalization of the bit lines after a write or read operation that disturbs the following read operation. In the last part of the paper, we demonstrate that the test of URWFs is more effective in terms of resistive defect detection than that of URRFs and we list the necessary test conditions to detect them.

Mild and neutral deprotections catalyzed by cerium(IV) ammonium nitrate

The development of a novel, chemoselective, and catalytic deprotection methodology that proceeds under mild and neutral conditions is described, and its mechanism of action is analyzed in some detail. The scope, limitations, and advantages of this protocol are discussed. Selected applications in synthesis are also highlighted.