全文获取类型
收费全文 | 609214篇 |
免费 | 6365篇 |
国内免费 | 1044篇 |
学科分类
工业技术 | 616623篇 |
出版年
2021年 | 5480篇 |
2019年 | 5267篇 |
2018年 | 13842篇 |
2017年 | 14151篇 |
2016年 | 12657篇 |
2015年 | 6278篇 |
2014年 | 10307篇 |
2013年 | 26145篇 |
2012年 | 17238篇 |
2011年 | 25759篇 |
2010年 | 21492篇 |
2009年 | 22559篇 |
2008年 | 23013篇 |
2007年 | 24002篇 |
2006年 | 16316篇 |
2005年 | 16714篇 |
2004年 | 15260篇 |
2003年 | 14833篇 |
2002年 | 13721篇 |
2001年 | 12897篇 |
2000年 | 12441篇 |
1999年 | 12024篇 |
1998年 | 27651篇 |
1997年 | 20040篇 |
1996年 | 15639篇 |
1995年 | 12016篇 |
1994年 | 10883篇 |
1993年 | 10631篇 |
1992年 | 8344篇 |
1991年 | 8121篇 |
1990年 | 7990篇 |
1989年 | 7763篇 |
1988年 | 7484篇 |
1987年 | 6747篇 |
1986年 | 6533篇 |
1985年 | 7390篇 |
1984年 | 6700篇 |
1983年 | 6437篇 |
1982年 | 5776篇 |
1981年 | 5896篇 |
1980年 | 5630篇 |
1979年 | 5733篇 |
1978年 | 5663篇 |
1977年 | 6178篇 |
1976年 | 7685篇 |
1975年 | 5108篇 |
1974年 | 4903篇 |
1973年 | 4980篇 |
1972年 | 4279篇 |
1971年 | 4038篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
981.
Y. Rey-Tauriac J. Badoc B. Reynard R.A. Bianchi D. Lachenal A. Bravaix 《Microelectronics Reliability》2005,45(9-11):1349
This paper presents results of reliability investigation of 20 V N-Drift MOS transistor in 0.13 μm CMOS technology. Due to high performances required for CMOS applications, adding high voltage devices becomes a big challenge to guarantee the reliability criteria. In this context, new reliability approaches are needed. Safe Operating Area are defined for switch, Vds limited and Vgs limited applications in order to improve circuit designs. For Vds limited applications, deep doping dose effects in drift area are investigated in correlation to lifetime evaluations based on device parameter shifts under hot carrier stressing. To further determine the amount and locations of hot carriers injections, accurate 2D technological and electrical simulations are performed and permit to select the best compromise between performance and reliability for N-Drift MOS transistor. 相似文献
982.
N. V. Vostokov Yu. N. Drozdov Z. F. Krasil’nik O. A. Kuznetsov A. V. Novikov V. A. Perevoshchikov M. V. Shaleev 《Russian Microelectronics》2005,34(4):203-209
The results are presented of the fabrication of strain-relaxed graded Si1 − x
Gex/Si(001) buffer layers with a maximum Ge fraction of about 0.25 that have a low density of threading dislocations (<106 cm−2) and low surface roughness. The buffer layers are grown by atmospheric-pressure hydride CVD. It is found that chemical mechanical polishing can reduce their surface roughness to a level comparable with that of the original Si(001) substrates. It is shown that the polished buffer layers can serve as substrates for MBE-grown SiGe/Si heterostructures.__________Translated from Mikroelektronika, Vol. 34, No. 4, 2005, pp. 243–250.Original Russian Text Copyright © 2005 by Vostokov, Drozdov, Krasil’nik, Kuznetsov, Novikov, Perevoshchikov, Shaleev. 相似文献
983.
This paper proposes a new control algorithm for a linear belt-driven servomechanism. The elasticity of the belt and large nonlinear friction along with large variation of parameters limit the applicability of the belt driven servosystems. Design of simple control that can guarantee stable, vibration-free operation for large variation of load is needed to extend application of such a linear stage. The proposed control is based on the application of sliding mode methods combined with Lyapunov design so it guarantees the stability of the system. Due to the restriction of the system motion to specially selected sliding mode manifold the vibration free position tracking is achieved with very good disturbance rejection. Proposed algorithm is simple and practical for an implementation and the tuning procedure of the control parameters is simple. The experiments have shown that the proposed control scheme effectively suppresses vibrations and assures wide closed-loop bandwidth for position tracking control. 相似文献
984.
M. M. Stadnyk 《Materials Science》2007,43(6):764-768
We deduce the theoretical formula taking into account the influence of biaxial loading of a plate weakened by a crack on the
stress intensity factor K
I. This enables us to compute the characteristic of crack resistance K
c according to the known boundary forces.
__________
Translated from Fizyko-Khimichna Mekhanika Materialiv, Vol. 43, No. 6, pp. 14–16, November–December, 2007. 相似文献
985.
The paper describes an experimental investigation of the diamond-like carbon deposition process from methane precursor with an innovative high-density inductively coupled plasma source. It appears that a high plasma density allows a fast growth of diamond-like carbon coatings exhibiting a high hardness. In contrast to what is usually found in the literature, it seems that the ion species participate significantly to the growth of the carbon film when exposed to a high ion flux. 相似文献
986.
Ya. O. Shablovskii 《Inorganic Materials》2007,43(12):1345-1349
The pyroelectric properties of lithium sulfate have been studied theoretically on the hypothesis of a pseudosymmetry of the structure of its polar phase. Analytical expressions are proposed for the temperature dependences of its pyroelectric polarization and pyroelectric coefficient at low temperatures and near the polymorphic transformation. The pyroelectric and piezoelectric coefficients of a polar crystal are shown to be in direct proportion. 相似文献
987.
988.
M. V. Zagidullin V. D. Nikolaev M. I. Svistun N. A. Khvatov 《Journal of Engineering Physics and Thermophysics》2007,80(3):555-562
The results of parametric tests of a centrifugal bubble singlet-oxygen generator based on the reaction of chlorine with an
alkaline hydrogen peroxide solution have been given. The utilization of chlorine grows with bubble-layer height, whereas the
relative content of O2(1Δ) remains constant. Growth in centrifugal acceleration leads to a more efficient utilization of chlorine. A specific oxygen
output of more than 1 mmole·cm−2·sec−1 from the bubble layer for a degree of chlorine utilization of ∼95% and a singlet-oxygen yield of more than 50% has been attained.
It has been shown that a centrifugal bubble singlet-oxygen generator is an efficient energy source for an oxygen-iodine laser.
__________
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 80, No. 3, pp. 121–128, May–June, 2007. 相似文献
989.
An efficient algorithm for the computation of the orthogonal Fourier-Mellin moments (OFMMs) is presented. The proposed method computes the fractional parts of the orthogonal polynomials, which consist of fractional terms, recursively, by eliminating the number of factorial calculations. The recursive computation of the fractional terms makes the overall computation of the OFMMs a very fast procedure in comparison with the conventional direct method. Actually, the computational complexity of the proposed method is linear O(p) in multiplications, with p being the moment order, while the corresponding complexity of the direct method is O(p2). Moreover, this recursive algorithm has better numerical behaviour, as it arrives at an overflow situation much later than the original one and does not introduce any finite precision errors. These are the two major advantages of the algorithm introduced in the current work, establishing the computation of the OFMMs to a very high order as a quite easy and achievable task. Appropriate simulations on images of different sizes justify the superiority of the proposed algorithm over the conventional algorithm currently used 相似文献
990.