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991.
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993.
Partially supported by NSF Grant DMS-9004123 and ARO through MSI Cornell (DAAG 29-85-C-0018) 相似文献
994.
D. Guidotti J. G. Wilman A. J. Ricci 《Applied Physics A: Materials Science & Processing》1992,54(6):570-573
An instrument is described that can be used to monitor, with unprecedented sensitivity, changes in the optical reflectivity due to crystailine damage incurred during ion implantation. It is shown that at the shot-noise limit, changes in the optical reflectivity of silicon as small as 5·10–7 can be measured in a 10 Hz bandwidth with a signal-to-noise ratio of 100, corresponding to an extrapolated uniform implantation dose of 5·108 cm–2 for 11B+ at 50 keV in silicon. 相似文献
995.
E. Kapon M. Walther J. Christen M. Grundmann C. Caneau D.M. Hwang E. Colas R. Bhat G.H. Song D. Bimberg 《Superlattices and Microstructures》1992,12(4)
Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than KBT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated. 相似文献
996.
Zboril R. Mashlan M. Machala L. Walla J. Barcova K. Martinec P. 《Hyperfine Interactions》2004,156(1-4):403-410
Hyperfine Interactions - The natural garnets from almandine (Fe3Al2Si3O12)–pyrope (Mg3Al2Si3O12) series with the iron to magnesium atomic ratio ranging from 0.2 to 1 were characterised and... 相似文献
997.
R. Kudrawiec M. Syperek J. Misiewicz R. Paszkiewicz B. Paszkiewicz M. Tlaczala 《Superlattices and Microstructures》2004,36(4-6):633
Undoped AlGaN/GaN heterostructures with different content and thickness of AlGaN layer are investigated by photoreflectance (PR) spectroscopy. We have observed PR resonances related to an absorption in both GaN and AlGaN layers. The character of these resonances has been analyzed, and PR lines associated with excitonic and band-to-band absorption in the GaN layer and band-to-band absorption in the AlGaN layer have been identified. The transition related to band-to-band absorption possesses characteristic Franz–Keldysh oscillations (FKOs) associated with a built-in electric field. The electric field in the AlGaN layer obtained on the basis of the analysis of FKOs has been found to be in the range of 244–341 kV/cm. The value of the field has been found to decrease with the increase in AlGaN thickness and to increase with the increase in Al concentration. The surface potential for AlGaN layers has been found to increase with the increase in Al mole fraction and has been estimated to be in the range of 1.0–1.7 eV. 相似文献
998.
Design theory crosses the boundary between mathematics and statistics, and includes a wide range of disparate types of design. In this paper we present a classification scheme which aims to include as many important types as possible, based on a balance among concept, representation and use. 相似文献
999.
1000.
For any two points p and q in the Euclidean plane, define LUNpq = { v | v ∈ R2, dpv < dpq and dqv < dpq}, where duv is the Euclidean distance between two points u and v . Given a set of points V in the plane, let LUNpq(V) = V ∩ LUNpq. Toussaint defined the relative neighborhood graph of V, denoted by RNG(V) or simply RNG, to be the undirected graph with vertices V such that for each pair p,q ∈ V, (p,q) is an edge of RNG(V) if and only if LUNpq (V) = ?. The relative neighborhood graph has several applications in pattern recognition that have been studied by Toussaint. We shall generalize the idea of RNG to define the k-relative neighborhood graph of V, denoted by kRNG(V) or simply kRNG, to be the undirected graph with vertices V such that for each pair p,q ∈ V, (p,q) is an edge of kRNG(V) if and only if | LUNpq(V) | < k, for some fixed positive number k. It can be shown that the number of edges of a kRNG is less than O(kn). Also, a kRNG can be constructed in O(kn2) time. Let Ec = {epq| p ∈ V and q ∈ V}. Then Gc = (V,Ec) is a complete graph. For any subset F of Ec, define the maximum distance of F as maxepq∈Fdpq. A Euclidean bottleneck Hamiltonian cycle is a Hamiltonian cycle in graph Gc whose maximum distance is the minimum among all Hamiltonian cycles in graph Gc. We shall prove that there exists a Euclidean bottleneck Hamiltonian cycle which is a subgraph of 20RNG(V). Hence, 20RNGs are Hamiltonian. 相似文献