Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

几何参数对喷射器性能的影响分析

运用计算流体动力学软件Fluent对喷射器进行数值模拟,研究了工作喷嘴喉部直径、等截面混合室直径和长度等几何参数对喷射器性能的影响,并对数值模拟结果进行了分析。研究表明:在一定的工况下,工作喷嘴及等截面混合室对喷射器性能有极大的影响,存在最佳的喉部和混合室直径使得喷射系数最大;随着混合室长度的增加,喷射器的喷射系数将逐渐降低。     

超疏水聚合物表面的水滴蒸发模拟

基于质量守恒和Fick第一定律，模拟了水滴在超疏水聚合物表面的蒸发全过程．研究从以往的接触角<90±扩展到>150±，液滴形貌扩展为椭球球帽模型进行疏水表面蒸发模拟．水滴在超疏水PC和FPU/PMMA表面蒸发的实验结果显示，计算的椭球球帽模型可以更好的反映出液滴接触角和高度的变化情况，并且不同聚合物表面接触角的相同变化趋势也揭示出微-纳二级结构表面结构不仅影响液滴接触角，也影响液滴蒸发模式．     

Responses of Issatchenkia terricola WJL-G4 upon Citric Acid Stress

This study aimed to elucidate the responses of a novel characterized Issatchenkia terricola WJL-G4 against citric acid stress by performing physiological analysis, morphology observation, and structural and membrane fatty acid composition analysis. The results showed that under citric acid stress, the cell vitality of I. terricola WJL-G4 was reduced. The cell morphology changed with the unclear, uncompleted and thinner cell wall, and degraded the cell structure. When the citric acid concentration was 20 g/L, I. terricola WJL-G4 could tolerate citric acid and maintain the cell structure by increasing the intracellular pH, superoxide dismutase activity, and contents of unsaturated fatty acids. As the citric acid concentration was ≥80 g/L, the stress has exceeded the cellular anti-stress ability, causing substantial cell damage. The cell membrane permeability, the content of membrane lipids, malondialdehyde and superoxide anion increased, but the intracellular pH and superoxide dismutase activities decreased, accompanying the increase of citric acid concentrations. The findings of this work provided a theoretical basis for the responsive mechanism of I. terricola WJL-G4 under high concentrations of citric acid, and can serve as a reference for biological acid reduction in fruit processing.     

1,4-bis[2-(4-pyridyl)ethenyl]-benzene衍生物热致变色研究

本文制备了三种在1,4-bis[2-(4-pyridyl)ethenyl]-benzene(bp-eb)上接枝不同烷基链长度的热致变色材料DC8、DC12、DC16. 在365 nm激发光下,随着温度升高,它们呈现出荧光颜色的改变,这种改变来自于晶体态与无定形态之间的转变. 此外,DC16也呈现出光致变色的性质. 通过差示扫描量热法测试得到的相转变温度高于实验过程中荧光颜色改变时的温度. 因此,这种变色行为来自于光与热共同作用的结果. 乙醇可以使粉末变回起始的晶体状态,从而使荧光颜色恢复,实现热致变色行为的可逆. 本研究对理解热致变色分子的结构-性质关系,指导热致变色分子设计具有重要意义.     

In situ measurement on nonuniform velocity distributionin external detonation exhaust flow by analysis ofspectrum features using TDLAS

Instantaneous and precise velocity sensing is a critical part of research on detonation mechanism and flow evolution.This paper presents a novel multi-projection tunable diode laser absorption spectroscopy solution,to provide a real-time and reliable measurement of velocity distribution in detonation exhaust flow with obvious nonuniformity.Relations are established between overlapped spectrums along probing beams and Gauss velocity distribution phantom according to the frequency shifts and tiny variations in components of light-of-sight absorbance profiles at low frequencies analyzed by the fast Fourier transform.With simulated optical measurement using H2O feature at 7185.6 cm-1 carried out on a phantom generated using a simulation of two-phase detonation by a two-fluid model,this method demonstrates a satisfying performance on recovery of velocity distribution profiles in supersonic flow even with a noise equivalent absorbance up to 2×10^-3.This method is applied to the analysis of rapidly decreasing velocity during a complete working cycle in the external flow field of an air-gasoline detonation tube operating at 25 Hz,and results show the velocity in the core flow field would be much larger than the arithmetic average from traditional tunable diode laser doppler velocimetry.This proposed velocity distribution sensor would reconstruct nonuniform velocity distribution of high-speed flow in low cost and simple operations,which broadens the possibility for applications in research on the formation and propagation of external flow filed of detonation tube.     

基于重叠栅工艺的硅量子点阵列的制备与调控

利用半导体量子点阵列结构实现近邻耦合是规模化扩展自旋量子比特的主要方案之一.随着量子点数目的增加,量子点阵列器件的制作工艺及参数调控均愈加复杂.本文介绍了一种重叠栅工艺结构,利用多层相互重叠且具有不同功能的栅极定义量子点,制作出结构紧凑、调控性好的量子点阵列器件,解决了工艺扩展的难题.此外,本文发展了一套高效可靠的调控方法,按顺序逐个添加量子点并建立虚拟电极,实现了对量子点参数的独立控制,并且能够高效且独立地调控各量子点中的电子数目,克服了大规模量子点阵列中电压参数配置的困难.这些方法为未来实现大规模自旋比特阵列提供了一种标准化的方案.     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

Spectral Properties and Solubilization Location of 2'-Ethylhexyl 4-(N,N-Dimethylamino)benzoate in Micelles

在阳离子、非离子和阴离子表面活性剂胶束溶液中,研究了4-(N,N-二甲氨基)苯甲酸2'-乙基己基酯(EHDMAB)的双重荧光和紫外吸收．当EHDMAB增溶在不同的胶束溶液中,紫外吸收增强,在离子型胶束溶液中,可观察到具有较长波长的EHDMAB分子内扭转电荷转移(TICT)荧光,相反,在非离子型胶束溶液中,可观察到具有较短波长TICT荧光,特别是位于阳离子胶束Stern层中的吡啶阳离子可强烈猝灭EHDMAB分子的双重荧光,所吸收的紫外辐射主要通过TICT荧光和非辐射去活化衰减．按照EHDMAB分子TICT荧光在有机溶剂中的极性依赖性,EHDMAB分子的4-(N,N-二甲氨基)在离子型胶束和非离子型胶束中处于不同的极性环境;根据EHDMAB和表面活性剂分子的结构和大小分析,EHDMAB分子的4-(N,N-二甲氨基)应朝向胶束的极性头基团,而2'-乙基己基链则朝向疏水性的胶束内核．动态荧光猝灭测量为EHDMAB分子在不同胶束中的位置进一步提供了佐证．     

一种蓝色聚合物激光材料

聚合物作为一种有机发光材料,由于在平板显示和光电子器件中的良好应用前景而受到广泛研究［１～２］．近年来,一个重要进展是在聚合物中观测到了受激发射（简称Ｐｏｌｙ－ｍｅｒ激光）现象［３～６］．Ｐｏｌｙｍｅｒ激光最早是在溶液中实现的［３～４］．作为一种新型...